• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.5
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• pp.509-520
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• 1992

AIGaAs /GaAs HBT OR /NOR gate. which can be used for high speed digital system was designed. Equivalent circuit parameters of HBT were obtained from Gummel-Poon's model and direct extraction method. Simulation results with PSPI CE showed that propagation delay time and cutoff toggle frequency of designed gate were 25ps and 200Hz, respectively. the designed gate exhibited superior properties to the recently reported HBT ECL and MESFET SCFL when considering the fan-out characteristics and noise margin.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.2
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• pp.33-39
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• 1974

Networks showing often and short stable voltage inversion negative immittance converter(VNIC) characteristics are proposed by simplified equivalent model. Open stable VNIC characteristics can be obtained of controlling the base voltage of common base connection according to output voltage and short stable VNIC characteristics according to input dotage. An unbalanced circuit showing open and short stable characteristics is constructed and ana1ysis. The experimental results are coincident with the calculated within 10% error.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.116-126
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• 1994

In this paper, the switch-level fault simulator for CMOS circuits with a gate-to-drain/source short fault is implemented. A fault model used in this paper is based on the graphical analysis of the electrical characteristics of the faulty MOS devices and the conversion of the faulty CMOS circuit to the equivalent faulty CMOS inverter in order to find its effect on the successive stage. This technique is very simple and has the increased accuracy of the simulation. The simulation result of the faulty circuit using the implemented fault simulator is compared with the result of the SPICE simulation.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.725-726
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• 2008

This paper deals with characteristic analysis of Linear Switched Reluctance Motor (LSRM) according to switching condition. When approved current in each phase by decided position, we made sure current and voltage according to turn-on, turn-off. In dynamic simulation of LSRM, through an experiment, we decided turn-on position of inductance profile. Also, we presented dynamic characteristic analysis model which is consisted at motor and sensor signal part, etc., and substitute circuit constant that get using magnetic equivalent circuit method, we confirmed current and voltage waveform.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.768-776
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• 2014

Using a simplified high-frequency small-signal equivalent circuit model for BSIM3 MOSFET, the fully differential two-stage folded-cascode CMOS operational amplifier is analyzed to obtain its small-signal voltage transfer function. As a result, the expressions for dc gain, five zero frequencies, five pole frequencies, unity-gain frequency, and phase margin are derived for op amp design using design equations. Then the analysis result is verified through the comparison with Spice simulations of both a high speed op amp and a low power op amp designed for the $0.13{\mu}m$ CMOS process.

• Journal of Navigation and Port Research
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• v.30 no.7
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• pp.607-610
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• 2006

A new compact microstrip low-pass filter and its equivalent-circuit model are developed. The philosophy of the structure behind this novel microstrip low-pass filter is simple as it is composed of a pair of symmetrical parallel coupled-line and an open-stub. With this configuration, a finite attenuation pole near the stopband cutoff frequency is available and adjustable by simply tuning the circuit parameters. Furthermore, the rejection bandwidth of this type of low-pass filter can be extended. In order to validate the feasibility of the proposed design method, a low-pass filter based on a microstrip structure is designed, fabricated, and measured. Experimental results agree very well with the simulation and analytical results.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.58-60
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• 2009

This paper deals with force characteristic analysis of linear switched reluctance motor using dynamic simulation. First, we calculated flux density of linear switched reluctance motor according to position. Second, analyzed normal force from flux density of linear switched reluctance motor according to position. Also, analysis result compares with data that is derived through a finite element analysis, and proved validity. However, linear switched reluctance motor has non linear characteristic, hence, analysis of propulsion force do not easy using analytical method. Therefore, we presented dynamic characteristic analysis model which is consisted at motor and sensor signal part, etc., and substitute circuit constant that get using magnetic equivalent circuit method, we confirmed propulsion force.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.5
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• pp.15-21
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• 2011

This paper presents an analyzing method of the capacitance of the power transformer for initial voltage distribution and insulation design. When a high incoming surge voltage is accidently occurred in windings of transformer, it does not distribute equally in the windings. This phenomenon makes electric field concentration and the insulating material could be break. Initial voltage distribute mostly depends on capacitances between winding to winding or winding to core in the transformer. If the C network can be structuralized into the equivalent circuit model and be calculated each capacitance element value by circuit analysis and FEM(Finite Element Method) simulation program, the transformer designer could know the place where the structure is to be modified or the insulation to be reinforced. This method quickly provides the data of the voltage distribution in each winding to the designer.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1153-1155
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• 2005

This paper deals with dynamic characteristics of LSRM according to drive condition. First, in experiment of LSRM, position of LSRM detected approximation sensor. Position choose mover of LSRM and inductance. When approved current in each phase by decided position, we made sure current and voltage according to turn-on, turn-off. Second, in dynamic characteristic of LSRM, through an experiment, we decided turn-on position of inductance profile. Also, we presented dynamic characteristic analysis model which is consisted at motor and sensor signal part, etc., and substitute circuit constant that get using magnetic equivalent circuit method, we confirmed current and voltage waveform.

• Proceedings of the KIPE Conference
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• 1996.06a
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.