• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.438-439
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• 2006

We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• 전력전자학회논문지
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• 제24권5호
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• pp.365-371
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• 2019

This study shows the feasibility of the parameter of the 1st RC parallel equivalent circuit as a factor of the heat generation of lithium-ion cell. The internal resistance of a lithium-ion cell consists of ohmic and polarization resistances. The internal resistances at various SOCs of the lithium-ion cell are obtained via an electrical characteristic test. The internal resistance is inversely obtained through the amount of heat generated during the experiment. By comparing the resistances obtained using the two methods, the summation of ohmic and polarization resistances is identified as the heating factor of lithium-ion battery. Finally, the amounts of heat generated from the 2C, 3C, and 4C-rate discharge experiments and the COMSOL multiphysics simulation using the summation of ohmic and polarization resistances as the heating parameter are compared. The comparison shows the feasibility of the electrical parameters of the 1st RC parallel equivalent circuit as the heating factor.

• 한국환경과학회지
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• 제17권11호
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• pp.1211-1220
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• 2008

In this study, we estimated, the equivalent roughness using an estimation model, which considered grain distribution on the bed and the protrusion height of the grains. We also reviewed the appropriateness of the estimated equivalent roughness at the Goksung and Gurey station in the Seomjin River. To review the appropriateness of this model, we presented the water level-discharge relation curve applying the equivalent roughness to the flow model and compared and reviewed it to observed data. Also, we compared and reviewed the observed data by estimating the Manning coefficient n, the Chezy coefficient C, and the Darcy-Weisbach friction coefficient f by the equivalent roughness. The calculation results of the RMSE showed within 5% error range in comparison with observed value. Therefore the estimated equivalent roughness values by the model could be proved appropriate.

• 소성∙가공
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• 제6권6호
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• pp.482-488
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• 1997

New carbon equivalent equation for the better prediction for the better prediction of roll force in a continuous hot strip mill has been formulated by applying a neural network method. In predicting roll force of steel strip, carbon equivalent equation which normalize the effects of various alloying elements by a carbon equivalent content is very critical for the accurate prediction of roll force. To overcome the complex relationships between alloying elements and operational variables such as temperature, strain, strain rate and so forth, a neural network method which is effective for multi-variable analysis was adopted in the present work as a tool to determine a proper carbon equivalent equation. The application of newly formulated carbon equivalent equation has increased prediction accuracy of roll force significantly and the effectiveness of neural network method is well confirmed in this study.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• 대한전자공학회논문지SD
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• 제37권2호
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• pp.1-4
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• 2000

공통컬렉터 잡음등가회로 해석에 기초한 베이스저항 추출방법을 제시하였다. 측정은 BiCMOS공정으로 제조되고 폴리에미터 구조를 갖는 소자에 대해서 실행 되었다. 베이스저항 측정은 서로 다른 베이스전류와 구조에 따라 수행되었다. 낮은 베이스전류에서 측정된 실험값은 이론적으로 예측된 값과 매우 잘 일치하는 결과를 얻었다

• 대한토목학회논문집
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• 제28권6B호
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• pp.635-642
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• 2008

개수로 난류흐름내 잠기지 않는 저항체들이 에너지 손실에 미치는 영향을 수리실험을 통해 연구하였다. 개수로의 잠기지 않는 구조물이나 식생을 연구하기 위하여 정방형 다열기둥을 실험에 사용하였다. 실험수로에 흐름방향 다열기둥을 횡방향으로 1열 및 2열로 배치하고 평균적 등류수위를 유지하여 일련의 유량과 수로경사를 조건으로 실험을 수행하고 측정하였다. 실험결과를 Manning공식에 적용하여 바닥마찰과 기둥의 형상저항에 의한 흐름저항 및 에너지손실을 표현하는 상당저항계수 값을 등류수심과 기둥의 이격거리를 변화시키며 산정하였다. 그리고 실험을 통해 산정된 값과 항력상호작용계수를 포함하는 운동량방정식으로부터 유도된 상당저항계수의 이론식과 비교하였다. 이론식과 실험치의 비교로부터 기둥에 의한 흐름저항의 상호작용이 수로전체의 에너지손실에 미치는 영향이 매우 중요함을 알 수 있었다. 그리고 기둥폭에 대한 기둥이격거리가 약 2.2배 이하 일 때 값이 감소하며, 항력상호작용계수가 기둥이격거리에 지배적으로 의존한다는 사실로 부터 이론식에 나타난 값이 등류수심에 2/3승으로 증가함이 유효함을 알 수 있었다.

• 대한전자공학회논문지
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• 제10권1호
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• pp.9-17
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• 1973

본논문온 전류안정부저항특성을 나타내는 회로를 구성하는데 있어서, 입력전류가 변하는 어느 구간에서 입력전류의 변화에 따라서, SAMUEL SEELY가 제시한 Beam저항을 도입하여, Beam저항이 감소하는 원리를 적용하였다. 이러한 원리에 따르는 회로의 모델을 트랜지스터 회로로써 구체화하였다. 구체화된 트런지스터회로는 PNP 트런지스터와 NPN트랜지스터와 저항으로 이루어졌다. 이 회로의 전압-전류특성이 안정되도록 하기 위하여 회로를 수정하여 회로의 동작을 추정하여 해석하였다. 추정된 동작과 부저항치를 실험을 통하여 모두 뒷밭침 하였다. 여기서 얻어진 회로은 쟈이레이터의 구성과 SCR동작의 모의화등에 유용하게 이용될 것이며, 전류안정중저항회로의 구성에 관한 평이화를 기하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.103-106
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• 2004

We have studied a conduction mechanism and equivalent circuit analysis in $Alq_3$ based Organic Light Emitting Diode. The conduction mechanism in organic light emitting diode can be classified into three regions; ohmic region, space-charge-limited current (SCLC) region and trap-charge-limited current (TCLC) region depending on the region of applied voltage. Equivalent circuit model of organic light emitting diode can be established using a parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.