• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.3 s.47
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• pp.295-305
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• 2004

Colloid and surface chemistry have been focused on surface area and surface energy. Local surface properties such as surface density, interaction, molecular orientation and reactivity have been one of interesting subjects. Systems of such surface energy being important would be listed as association colloid, emulsion, particle dispersion, foam, and 2-D surface and film. Such nanoparticle systems would be applied to drug delivery systems and functional cosmetics with biocompatible and degradable materials, while nanoparticles having its size of several nm to micron, and wide surface area, have been accepted as a possible drug carrier because their preparation, characteristics and drug loading have been inves-tigated. The biocompatible carriers were also used for the solubilization of insoluble drugs, the enhancement of skin absorption, the block out of UV radiation, the chemical stabilization and controlled release. Nano/micro emulstion system is classified into nano/microsphere, nano/microcapsule, nano/microemulsion, polymeric micelle, liposome according to its prep-aration method and size. Specially, the preparation method and industrial applications have been introduced for polymeric micelles self-assembled in aqueous solution, nano/microapsules controlling the concentration and activity of high concen-tration and activity materials, and monolayer or multilayer liposomes carrying bioactive ingredients.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.219-224
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• 2012

We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness${\approx}$300 nm, built-in potential${\approx}$1.05 V, defect density (at t=0)${\approx}5{\times}10^{15}cm^{-3}$, short-circuit current density (at t=0)${\approx}15.8mA/cm^2$, fill factor (at t=0)${\approx}0.691$, open-circuit voltage (at t=0)${\approx}0.865V$, conversion efficiency (at t=0)${\approx}9.50%$.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.109-115
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• 1993

A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• Explosives and Blasting
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• v.40 no.3
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• pp.19-32
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• 2022

Hydrogen is a fuel having the highest energy compared with other common fuels. This means hydrogen is a clean energy source for the future. However, using hydrogen as a fuel has implication regarding carrier and storage issues, as hydrogen is highly inflammable and unstable gas susceptible to explosion. Explosions resulting from hydrogen-air mixtures have already been encountered and well documented in research experiments. However, there are still large gaps in this research field as the use of numerical tools and field experiments are required to fully understand the safety measures necessary to prevent hydrogen explosions. The purpose of this present study is to develop and simulate 3D numerical modelling of an existing hydrogen gas station in Jeonju by using handheld LiDAR and Ansys AUTODYN, as well as the processing of point cloud scans and use of cloud dataset to develop FEM 3D meshed model for the numerical simulation to predict peak-over pressures. The results show that the Lidar scanning technique combined with the ANSYS AUTODYN can help to determine the safety distance and as well as construct, simulate and predict the peak over-pressures for hydrogen refueling station explosions.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.94-101
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• 2023

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.