• 대한전자공학회논문지
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• 제19권5호
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• pp.1-4
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• 1982

Bridgman방법으로 Inse 단결정을 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있으며 격자 상수는 a=4.02A, c=24.96A이고 전기 전도도는 300°K에서 ∼10-1, 50°K에서 ∼10-6(Ω·cm)-1이다. 전기 전도형은 n형으로 도우너 (donor) 준위는 전도대밑 0.072ev 되는 점에 위치하고 있다. 광전도도는 840nm부터 1120nm까지의 영역에서 감도를 가지고 있으며 광투과 특성으로부터 구한 InSe의 에너지 갭(gap)은 1.21ev이다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1341-1346
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• 2004

Detailed flame structures of the opposed flames formed for different oxidant compositions are studied numerically. The detailed chemical reactions are modeled by using the CHEMKIN code. Only the $CO_{2}$ and $H_{2}O$ are assumed to participate by absorbing the radiative energy while all other gases are assumed to be transparent. The discrete ordinates method and a narrow band based WSGGM with a gray gas regrouping technique are applied for modeling the radiative transfer through non-homogeneous and non-isothermal combustion gas mixtures generated by the opposed flow flames. The results show that the different radiation model can cause different results for flame structures and the WSGGM with gray gas regrouping is successful in modeling the opposed flames with non-gray gas mixture. The results also show that a reasonable information on the flame structure can be obtained from the modeling by considering different chemical compositions of the oxidant.

• 한국재료학회지
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• 제15권5호
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Journal of Ginseng Research
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• 제14권2호
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• pp.310-316
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• 1990

This study was focused on the characterization of mitochondrial DNA (mtDNA) for molecular 9enetical approach of energy Production related mechanism in Panax ginseng. The simple and efficient method of mtDNA isolation from ginseng has been developed by modification of recently advanced methods. This procedure can successfully apply to mtDNA isolation of several plants. mtDNA of etiolated shoot and one-year root were digested with restriction endonucleases, but that of 6-year root not. Any difference was not observed in the restriction endonuclease digestion patterns among the ginseng variants. Molecular size of ginseng mtDNA was estimated at least 159 kb by the restriction endonuclease fragment analysis. The 4.5 kb extra band at the lane of EcoRII treatment could be observed in restriction patterns digested with the methylation sensitive endonucleases, BstN I and EcoRII. For construction of mitochondrial genomic library of ginseng, mtDNA was partially digested with EcoRl, and packaged with EMBL4 phage vector. Genomic library was screened and purified for further research including restriction mapping of ginseng mtDNA, and cloning of the genes. The gene of ATP synthase A subunit was cloned from the purified EMBL4 library clone No. 16. Now, clone No. 16 is subcloned for structure gene sequence analysis.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.712-718
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• 2003

진공 증착한 CdS 박막의 질소 이온 주입 효과를 X-선 회절 검사, 광 투과율, 라만 산란 특성을 통하여 조사하였다. 질소 이온 주입하지 않은 CdS 박막은 (0 0 2)면으로의 우선 방위를 가지고 성장하였다. 질소 이온 주입한 시편의 경우 metallic Cd가 형성됨을 XRD 분석 결과 알 수 있었다. 가시광 영역에서의 광투과율은 질소 이온 주입 양이 많아짐에 따라 크게 감소하였다. 또한 질소 이온 주입 양에 따라 CdS 박막의 흡수 계수는 지수 함수적으로 증가하였고, 밴드 갭은 감소하였다 CdS 박막의 라만 peak 위치는 질소 이온 주입 양에 관계없이 299 cm-1로 거의 일정하지만, peak의 FWHM은 이온 주입 양이 증가함에 따라 커졌고, peak 면적은 감소하였다.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.562-568
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• 2008

In this paper, the hole injection layer(HIL) materials have been synthesized and analyzed. Their HOMO levels are $4.93{\sim}5.22\;eV$, and their energy band gaps are $2.74{\sim}3.19\;eV$. Their glass transition temperatures($T_g$) are all above $114^{\circ}C$, which implies that they are highly thermal-stable. The green OLED devices with a structure of ITO(150 nm)/NEW_HIL(50 nm)/NPB(30 nm)/$Alq_3$(50 nm)/Al:Li(100 nm) were fabricated and tested, incorporating these newly synthesized HIL materials. According to the test results of OLED devices, the I-V-L performances of these devices increase in the following sequence: ELM307 > ELM200 > ELM321 > ELM327 > ELM325. In addition, the OLED device with ELM307 as a HIL has the highest brightness and efficiency at the same driving voltage. These experimental results have shown that ELM307 can be used as one of the most promising candidates for HIL materials.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.257-260
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• 2007

In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.645-645
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• 2013

Applying a first-principles computational approach combining density-functional theory and matrix Green's function calculations, we have studied the effects [2+2] cycloaddition olligormerization of fullerene $C_{60}$ chains on their junction charge transport properties. Analyzing first the microscopic mechanism of the switching realized in recent scanning tunneling microscope (STM) experiments, we found that, in agreement with experimental conclusions, the device characteristics are not significantly affected by the changes in electronic structure of $C_{60}$ chains. It is further predicted that the switching characteristics will sensitively depend on the STM tip metal species and the associated energy level bending direction in the $C_{60}-STM$ tip vacuum gap. Considering infinite $C_{60}$ chains, however, we confirm that unbound $C_{60}$ chains with strong orbital hybridizations and band formation should in principle induce a much higher conductance state. We demonstrate that a nanoelectromechanical approach in which the $C_{60}-STM$ tip distance is maintained at short distances can achieve a metal-independent and drastically improved switching performance based on the intrinsically better electronic connectivity in the bound $C_{60}$ chains.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.823-827
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• 2001

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.