• Current Photovoltaic Research
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• 제4권2호
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• pp.68-79
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• 2016

The power conversion efficiency of perovskite solar cells has remarkably increased from 3.81% to 22.1% in the past 6 years. Perovskite solar cells, which are based on the perovskite crystal structure, are fabricated using organic-inorganic hybrid materials. The advantages of these solar cells are their low cost and simple fabrication procedure. Also, they have a band gap of about 1.6 eV and effectively absorb light in the visible region. For the commercialization of perovskite solar cells in the field of photovoltaics, the issue of their long term stability cannot be overlooked. Although the development of perovskite solar cells is unprecedented, their main drawback is the degradation of the perovskite structure by moisture. This degradation is accelerated by exposure to UV light, temperature, and external bias. This paper reviews the aforesaid reasons for perovskite solar cell degradation. We also discuss the research directions that can lead to the development of perovskite solar cells with high stability.

• 태양에너지
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• 제12권3호
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• pp.10-20
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• 1992

본 실험에서는 산업폐수, 가정폐수, 지하수 등에 오염되는 유독성 유기물 처리를 위한 태양반응시스템의 개발을 목적으로 batch형 광분해 반응시스템을 구성하여 수처리 분해 실험을 실시하였다. 실험실 규모의 batch형 반응기를 구성하여 수질 개선용 광화학 반응 활용의 기술적 타당성을 확보하고자 하였으며 다음과 같은 결론을 얻을수 있었다. (1) $TiO_2$ anatase, $TiO_2$ rutile 그리고 $V_2O_5$를 대상으로 광촉매 선정을 위한 실험결과, 본 실험조건에서는 band gap energy가 약 3.2 eV인 $TiO_2$ anatase가 유해 유기물 TCE의 가장 높은 분해율을 나타내었다. $TiO_2$ anatase의 결정구조는 XRD 관찰에 의하여 확인할 수 있었으며, BET-$N_2$ 측정결과 단위무게당 표면적은 약 7.748 $m^2/g$ 이었다. (2) $TiO_2$ anatase의 투입량이 많을수록 TCE분해율도 증가하였다. 그러나 투입량이 0.1 wt% 이상이 될 경우 분해율의 증진은 아주 미미하여서 0.1 wt%의 $TiO_2$ anatase 양을 slurry batch 형 시스템 실험에 최선으로 채택하였다. (3) $H_2O_2$의 양이 TCE 분해율에 미치는 영향을 조사한 결과 적정량은 약 0.06 volume%임을 알 수 있었다. 이는 적정량의 $H_2O_2$는 OH radical의 형성을 촉진시키지만 과량의 존재시에는 오히려 OH radical과 반응하여 이를 소모하는 역효과를 나타내기 때문이다. (4) 광반응기의 head space를 변화시키면서 산소양의 TCE 분해율에 미치는 영향을 관찰한 결과 TCE 분해반응식의 이론적 stoichiometry로나 실험적으로나 산소양이 아주 중요한 변수임을 알수 있었다.

• 대한화학회지
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• 제63권6호
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• pp.453-458
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• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• 한국결정성장학회지
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• 제10권3호
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• pp.199-204
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• 2000

본 연구에서는 청색 발광다이오드, 광전모듈레이터, 태양전지의 창문층 등의 광범위한 응용분야를 갖는 ZnS를 용액 성장법에 의해 nanometer 사이즈의 입자로 구성된 박막의 형태로 슬라이드 유리기판에 성장하고 구조적, 광학적 특성을 분석하고, 이 결과를 토대로 ZnS박막의 양자사이즈효과에 대해 연구하였다. 성장조건에 관련된 인자는 precursor 용액의 농도, 성장온도, 암모니아 용액의 농도, 성장시간 등이었다. X-선 회절분석 결과, 본 연구에서 용액성장법으로 성장한 ZnS박막은 cubic 구조($\beta$-ZnS)를 가졌다. 성장온도가 $75^{\circ}C$일 때 막의 표면상태가 가장 양호했으며 입자사이즈의 균일도도 가장 우수했다 광에너지 변화에 따른 광투과도 측정 결과, 본 연구의 ZnS 시료는 성장조건을 조절함에 따라 에너지밴드갭이 3.69 eV~3.91 eV까지 조절 할 수 있었고, 이는 벌크 ZnS의 에너지밴드갭인 3.65 eV보다 훨씬 높은 수치로서 양자사이즈효과에 의한 blue-shift 현상이 용액성장법으로 합성된 ZnS에서 큰 폭으로 나타남을 알 수 있었다. 그리고 photoluminescence(PL)측정 결과, ZnS 입자의 미세성으로 인한 입자 표면준위의 영향으로 PL 피크가 에너지밴드갭보다 훨씬 적은 에너지 영역에서 발생했다. 특히 PL피크의 위치가 입자사이즈와 막두께에 따라 shift했는데, 이는 용액성장법으로 성장한 ZnS의 경우 본 연구에서 최초로 보고되는 것이다.

• 한국재료학회지
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• 제23권3호
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• 공업화학
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• 제25권5호
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• pp.487-496
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• 2014

본 연구에서는 phenothiazine과 benzothiadiazole을 기반으로 하고, phenothiazine의 질소 위치에 다양한 side-chain을 치환한 고분자를 합성하였다. 합성된 고분자는 광학적, 전기화학적 분석 결과 300~700 nm에서 흡수를 보였고, -5.4 eV 정도의 이상적인 HOMO energy level를 갖는 특성을 확인하였다. 고분자와 $PC_{71}BM$을 광활성층으로 사용한 소자를 제작하였고, 측정결과 branched side-chain을 가지며 탄소수가 많은 P2HDPZ-bTP-OBT가 2.4%로 최대 광전변환효율을 갖는 것으로 확인되었다($V_{OC}$ : 0.74 V, $J_{SC}$ : $6.9mA/cm^2$, FF : 48.0%).

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1485-1490
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• 2014

We have designed and developed a new ladder type tetrafused ${\pi}$-conjugated building block such as dihydroindolo[3,2-b]indole (DINI) and investigated its role as an electron rich unit. The photovoltaic properties of a new semiconducting ${\pi}$-conjugated polymer, poly[[5,10-bisoctyl-5,10-dihydroindolo[3,2-b]indole-[5,6- bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole]], represented by PDINI-OBTC8 are described. The new polymer PDINI-OBTC8 was synthesized in donor-acceptor (D-A) fashion, where fused ${\pi}$-conjugated tetracyclic DINI, and 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl) benzo[c][1,2,5]thiadiazole (OBTC8) were employed as electron rich (donor) and electron deficient (acceptor) moieties, respectively. The conventional bulk heterojunction (BHJ) device structure ITO/PEDOT:PSS/PDINI-OBTC8:PCB71M/LiF/Al was utilized to fabricate polymer solar cells (PSCs), which comprises the blend of PDINI-OBTC8 and [6,6]-phenyl-$C_{71}$-butyric acid methyl ester ($PC_{71}BM$) in BHJ network. A BHJ PSC that contain PDINI-OBTC8 delivered power conversion efficiency (PCE) value of 1.68% with 1 vol% of 1,8-diidooctane (DIO) under the illumination of A.M 1.5G 100 $mW/cm^2$.

• Smart Structures and Systems
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• 제26권4호
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• pp.481-493
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• 2020

The negative stiffness spring and inerter are both characterized by the negative stiffness effect in the force-displacement relationship, potentially yielding an amplifying mechanism for dashpot deformation by being incorporated with a series tuning spring. However, resisting forces of the two mechanical elements are dominant in different frequency domains, thus leading to necessary complementarity in terms of vibration control and the amplifying benefit. Inspired by this, this study proposes a Negative Stiffness Inerter System (NSIS) as an earthquake protection system and developed analytical design formulae by fully utilizing its advantageous features. The NSIS is composed of a sub-configuration of a negative stiffness spring and an inerter in parallel, connected to a tuning spring in series. First, closed-form displacement responses are derived for the NSIS structure, and a stability analysis is conducted to limit the feasible domains of NSIS parameters. Then, the dual advantageous features of displacement reduction and the dashpot deformation amplification effect are revealed and clarified in a parametric analysis, stimulating the establishment of a displacement-based optimal design framework, correspondingly yielding the design formulae in analytical form. Finally, a series of examples are illustrated to validate the derived formulae. In this study, it is confirmed that the synergistic incorporation of the negative stiffness spring and the inerter has significant energy dissipation efficiency in a wide frequency band and an enhanced control effect in terms of the displacement and shear force responses. The developed displacement-based design strategy is suitable to utilize the dual benefits of the NSIS, which can be accurately implemented by the analytical design formulae to satisfy the target vibration control with increased energy dissipation efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Advances in nano research
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• 제15권5호
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.