• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.6-13
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• 2022

The electrostatic phenomenon seriously issued in extreme ultraviolet semiconductor cleaning was studied in junction with molecular dynamic aspect. It was understood that two lone pairs of electrons in water molecule were subtly different each other in molecular orbital symmetry, existed as two states of large energy difference, and became basis for water clustering through hydron bonds. It was deduced that when hydrogen bond formed by lone pair of higher energy state was broken, two types of [H₂O]⁺ and [H₂O]^- ions would be instantaneously generated, or that lone pair of higher energy state experiencing reactions such as friction with Teflon surface could cause electrostatic generation. It was specifically observed that, in case of electrolyzed cathode water, negative electrostatic charges by electrons were overlapped with negative oxidation reduction potentials without mutual reaction. Therefore, it seemed that negative electrostatic development could be minimized in cathode water by mutual repulsion of electrons and [OH]^- ions, which would be providing excellences on extreme ultraviolet cleaning and electrostatic control as well.

• Composites Research
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• v.15 no.2
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• pp.40-47
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• 2002

The di-functional epoxy resins, i.e., diglycidylether of bisphenol A(DGEBA) and diglycidylethere of bisphenol F(DGEBF) were initiated by cationic catalyst, i.e., benzylquinoxalinium hexafluoroantimonate(BQH) using electron-beam(EB) technique. And the effect of structure of DGEBA and DGEBF on thermal stabilities and cure behaviors was investigated. According to the experimental results, the decomposed activation energy based on Horowitz-Metzger method was higher in the case of DGEBA, but intergral procedural decomposition temperature(IPDT) of DGEBA was lower than DGEBF. This could be interpreted in terms of high crosslink density resulted from hydroxyl bond of DGEBF backbone. It was confirmed in increasing the hydroxyl band at $7000\;cm^{-1}$ and $5235\;cm^{-1}$ using near-infrared spectroscopy(NIRS).

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.8 s.101
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• pp.988-995
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• 2005

Vibration has been severly increased at the branch pipe of main steam header since the commercial operation of nuclear power plant. Intense broad band disturbance flow at the discontinuous region such as elbow, valve, and header generates the acoustical pulsation which is propagated through the piping system. The pulsation becomes the source of low frequency vibration at piping system. If it coincide with natural frequency of the pipe system, excessive vibration is made. High level vibration due to the pressure pulsation related to high dynamic stress, and ultimately, to failure probability affects fatally the reliability and confidence of plant piping system. This paper discusses vibration effect for the branch pipe system due to acoustical pulsations by broad band disturbance flow at the large main steam header in 700 MW nuclear power plant. The exciting sources and response of the piping system are investigated by using on-site measurements and analytical approaches. It is identified that excessive vibration is caused by acoustical pulsations of 1.3 Hz, 4.4 Hz and 6.6 Hz transmitted from main steam balance header, which are coincided with fundamental natural frequencies of the piping structure. The energy absorbing restraints with additional stiffness and damping factor were installed to reduce excessive vibration.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.780-785
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• 2005

Vibration has been severly increased at the branch pipe of main steam header since the commercial operation of a nuclear power plant. Intense broad band disturbance flow at the discontinuous region such as elbow, valve or heather generates the acoustical pulsation which is propagated through the piping system. The pulsation becomes the source of low frequency vibration at piping system. If it coincide with natural frequency of the pipe system, excessive vibration is made. High level vibration due to the pressure pulsation related to high dynamic stress, and ultimately, to failure probability affects fatally the reliability and confidence of plant piping system. This paper discusses vibration effect for the branch pipe system due to acoustical pulsations by broad band disturbance flow at the large main steam header in 7nn nuclear power plant. The exciting sources and response or the piping system are investigated by using on site measurements and analytical approaches. It is identified that excessive vibration is caused by acoustical pulsations of 1.3Hz, 4.4Hz and 6.6Hz transferred from main steam header, which are coincided with fundamental natural frequencies of the piping structure. The energy absorbing restraints with additional stiffness were installed to reduce excessive vibration.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.06a
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• pp.1273-1279
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• 2000

A new concept of piezoelectric smart panels for noise reduction in wide band frequencies is proposed and their possibility is experimentally investigated. The proposed panels are based on active and passive methods. They use piezoelectric smart structure technology for active noise reduction at low band frequencies and passive sound absorbing materials for mid-range of noise frequencies. To prove the concept of piezoelectric smart panels, an acoustic measurement experiment was performed. The smart panels exhibit a good noise reduction in middle and high frequency ranges due to the mass effects of absorbing materials or/and the air gap. The use of piezoelectric smart panel renders noise reduction large at resonance frequency. Another concept of smart panel that uses piezoelectric damping is experimentally investigated. Since piezoelectric dampings can reduce vibration and noise at resonance frequencies with simple shunt circuit, they have merits in terms of economy and simplicity. Dissipated energy method(DEM) is adopted to tune the shunt circuit precisely in piezoelectric dampings. Noise reduction at multiple resonance frequencies is demonstrated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• Journal of Magnetics
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• v.12 no.4
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• pp.149-151
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• 2007

The AlCrN films were grown by RF reactive sputtering method under the selected conditions. The Cr concentration was varied by the number of Cr pieces placed on the Al target. The sample quality has been studied by XRD, Auger spectroscopy, optical absorption and electrical resistant measurements. The XRD and Auger results show that the samples consist of a major phase with the $Al_{1-x}Cr_xN$ formula, which has a hexagonal structure, and a few percents at. of oxygen, which may form $Al_2O_3$. There exist the Cr clusters in the samples with high concentration of Cr. The optical absorption measurement provides the information about the band gap that relates strongly to the quality of samples. The quality of samples is also clearly reflected in electrical measurement, i.e., the temperature dependence of resistance exhibits a semiconductor characteristic only for the samples that have no Cr cluster. In these cases, the values of ionization energies $E_a$ can be derived from R(T) plots by using the function R(T) = Ro exp $(E_a/k_BT)$.

• Bulletin of the Korean Chemical Society
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• v.34 no.10
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• pp.2995-3004
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• 2013

The structural, electronic, and optical properties of poly(3-hexylthiophene) (P3HT) have been comprehensively studied by density functional theory (DFT) to rationalize the experimentally observed properties. Rather, we employed periodic boundary conditions (PBC) method to simulate the polymer block, and calculated effective charge mass from the band structure calculation for describing charge transport properties. The simulated results of P3HT are consistent with the experimental results in band gaps, absorption spectra, and effective charge mass. Based on the same calculated methods as P3HT, a series of polymers have been designed on the basis of the two types of building blocks, furofurans and furofurans substituted with cyano (CN) groups, to investigate suitable polymers toward polymer solar cell (PSC) materials. The calculated results reveal that the polymers substituted with CN groups have good structural stability, low-lying FMO energy levels, wide absorption spectra, and smaller effective masses, which are due to their good rigidity and conjugation in comparison with P3HT. Besides, the insertion of CN groups improves the performance of PSC. Synthetically, the designed polymers PFF1 and PFF2 are the champion candidates toward PSC relative to P3HT.

• Korean Journal of Materials Research
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• v.19 no.3
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• pp.125-131
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• 2009

In this report, the structural and optical properties of sol-gel derived $Mg_xZn_{1-x}O$ thin films upon changes in the composition and annealing temperature were investigated. The $Mg^{2+}$ content and the annealing temperature were varied in the range of $0{\leq}x{\leq}0.35$ and $400^{\circ}C{\leq}T{\leq}600^{\circ}C$, respectively. The films exhibited a hexagonal wurtzite structure of a polycrystalline nature. The optical transmittance exceeded 85% and the optical band gap of the film was tuned as high as 3.84 eV at a value of x = 0.35 (annealed at $400^{\circ}C$), which was evidently the maximum $Mg^{2+}$ content for the single-phase polycrystalline $Mg_xZn_{1-x}O$ thin films prepared in this experiment. The optical band gap and photoluminescence emission were tailored to the higher energy side while maintaining crystallinity without a significant change of the lattice constant.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.961-966
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• 2003

A quantum-chemical study of conformations and electronic structures of polyheterocyclic derivatives with vinylenediheteroatom substituents at the 3- and 4-positions was performed to search for novel blue-lightemitting conjugated polymers. Conformational potential energy curves of the polymers were constructed as a function of the helical angle (a) through semiempirical Hartree-Fock band calculations at the Austin model 1 level. It is found that poly(3,4-vinylenedioxythiophene) possesses a quite flat curve in the range of α = 51.4°- 120°. Replacing S atoms for O atoms greatly increases repulsion between the neighboring units, and thereby the units become perpendicular to one another. Because of the hydrogen bonding between O and NH, poly(3,4- vinylenedioxypyrrole) is predicted to be anti-coplanar and poly(3,4-vinylenediaminofuran) to be nearly anticoplanar. According to the modified extended Huckel band calculations, the HOMO-LUMO gaps (HLGs) of the polymers, unless the polymer chains are twisted, are close to or slightly smaller than those of their respective mother polymers. Among the polymers, poly(3,4-vinylenedioxythiophene) is presumed to be the most probable candidate for a blue-light emitter because its HLG is within the range of the electronic requirement for blue-light emitters.