• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.11
• /
• pp.969-974
• /
• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Journal of Satellite, Information and Communications
• /
• v.2 no.1
• /
• pp.56-62
• /
• 2007

UWB(Ultra Wide Band) system can transmits information with low power but it can achieve high transmission rate using broad frequency bands. Using CR(Cognitive Radio) technology, we can use and share frequency efficiently without interfere to satellite communication system. However, passive characteristics of satellite receiver makes it hard to implement. This paper propose additional structure of satellite receiver which add amplifier and antenna to local oscillator. Proposing structure emits satellite receiver's local oscillator signal and UWB terminal detects it by energy detection. We can find out the possibility of co-existence of UWB system and satellite communication system through the simulation result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05c
• /
• pp.47-52
• /
• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Korean Journal of Materials Research
• /
• v.31 no.9
• /
• pp.496-501
• /
• 2021

Metal halide perovskite nanocrystals, due to their high absorption coefficient, high diffusion length, and photoluminescence quantum yield, have received significant attention in the fields of optoelectronic applications such as highly efficient photovoltaic cells and narrow-line-width light emitting diodes. Their energy band structure can be controlled via chemical exchange of the halide anion or monovalent cations in the perovskite nanocrystals. Recently, it has been demonstrated that chemical exfoliation of the halide perovskite crystal structure can be achieved by addition of organic ligands such as n-octylamine during the synthetic process. In this study, we systematically investigated the quantum confinement effect of methylammonium lead bromide (CH₃NH₃PbBr₃, MAPbBr₃) nanocrystals by precise control of the crystal thickness via chemical exfoliation using n-octylammonium bromide (OABr). We found that the crystalline thickness consistently decreases with increasing amounts of OABr, which has a larger ionic radius than that of CH₃NH₃⁺ ions. In particular, a significant quantum confinement effect is observed when the amounts of OABr are higher than 60 %, which exhibited a blue-shifted PL emission (~ 100 nm) as well as an increase of energy bandgap (~ 1.53 eV).

• Transactions of the Korean hydrogen and new energy society
• /
• v.34 no.2
• /
• pp.205-211
• /
• 2023

Hydrogen gas is light and diffuses very quickly. Therefore, when a leakage accident occurs, the damage is great, so a technology that can quickly measure the leakage in the air at a long distance is needed. In order to develop hydrogen gas leaked in the atmosphere in a non-contact manner, an experiment was performed to measure hydrogen gas using a lidar technology using the Raman effect. Hydrogen Raman signals were detected using a UV LED light source, which is a Raman light source, and a spectrometer in the ultraviolet region including an optical filter in the 400-430 nm band. To develop this, a Raman lidar optical structure was designed to measure the hydrogen Raman signal at a certain distance, and the hydrogen Raman spectrum was confirmed using a standard gas to evaluate the performance of this optical structure. The linearity was found to be 0.99 using hydrogen standard gas (10, 50, 100, 500, 1,000 ppm). Accordingly, a Raman lidar capable of measuring hydrogen gas rapidly diffusing in the air in an open state was developed to improve the limitations of existing hydrogen sensors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.397-397
• /
• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1380-1383
• /
• 2007

The secondary electron emission coefficient (${\gamma}$) of the cathode is an important factor for improving the discharge characteristics of AC-PDP, because of its close relationship to discharge voltage. In this experiment, we have investigated the electronic structure of the energy band in the MgO layer responsible for the high ${\gamma}$. We used three kinds of MgO pellet that have another component, and each MgO layers have been deposited by electron beam evaporation method. The work-functions of MgO layer have been investigated from their ion-induced secondary electron emission coefficient (${\gamma}$), respectively, using various ions with different ionization energies in a ${\gamma}-FIB$ (Focused Ion Beam) system. We have compared work-function with ${\gamma}-FIB$ system current signal for measurement defect energy level in MgO layer. MgO-A in the three types has lowest work-function value (4.12eV) and there are two defect energy levels.

• Journal of the Korean institute of surface engineering
• /
• v.52 no.6
• /
• pp.310-315
• /
• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.146-146
• /
• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• Journal of Radiation Protection and Research
• /
• v.41 no.3
• /
• pp.185-190
• /
• 2016

Background: In order to measure neutron energy spectra, the conventional Bonner Sphere Spectrometers (BSS) are widely used. In this spectrometer, several measurements with different size Bonner spheres are required. Operators should, therefore, place these spheres in several times to a measurement point where radiation dose might be relatively high. In order to reduce this effort, novel neutron energy spectrometer using an onion-like single Bonner sphere was proposed in our group. This Bonner sphere has multiple sensitive spherical shell layers in the single sphere. In this spectrometer, a band-shaped thermal neutron detection medium, which consists of a LiF-ZnS mixed powder scintillator sheet and a wavelength-shifting (WLS) fiber readout, was looped to each sphere at equal angular intervals. Amount of LiF neutron converter is reduced near polar region, where the band-shaped detectors are concentrated, in order to uniform the directional sensitivity. The LiF-ZnS mixed powder has an advantage of extremely high light yield. However, since it is opaque, scintillation photons cannot be collect uniformly. This type of detector shows no characteristic shape in the pulse height spectrum. Subsequently, it is difficult to set the pulse height discrimination level. This issue causes sensitivity fluctuation due to gain instability of photodetectors and/or electric modules. Materials and Methods: In order to solve this problem, we propose to replace the LiF-ZnS mixed powder into a flexible and Transparent RUbber SheeT type $LiCaAlF_6$ (TRUST LiCAF) scintillator. TRUST LiCAF scintillator can show a peak shape corresponding to neutron absorption events in the pulse height spectrum. Results and Discussion: We fabricated the prototype detector with five sensitive layers using TRUST LiCAF scintillator and conducted basic experiments to evaluate the directional uniformity of the sensitivity. Conclusion: The fabricated detector shows excellent directional uniformity of the neutron sensitivity.