• Proceedings of the Korean Geotechical Society Conference
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• 2001.03a
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• pp.167-174
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• 2001

Reflection method using ultrasonic source has been attempted to obtain the information about tunnel lining structures composed of lining, shotcrete, water barrier and voids at the back of lining. In this work, two different types of sources, i.e. single-pulse source and sweep source, can be used. Single-pulse source with short time duration has the frequency content whose amplitudes tend to be concentrated around the dominant frequency, whereas sweep source with long time duration denotes a flat distribution of relatively larger amplitude over a broad frequency band, although the peak to peak amplitude of single-pulse source wavelet is equivalent to that of sweep source one. In traditional seismic application, a single-pulse source(weight drop, dynamite) is typically used. However, to investigate the fine structure, as it is the case in the tunnel lining structure, the sweep wavelet can be also a desirable source waveform primarily due to the higher energy over a broad frequency band. For the investigation purposes of sweep source, a physical modeling is a useful tool, especially to study problems of wave propagation in the fine layered media. The main purpose of this work was using a physical modeling technique to explore the applicability of sweep source to the delineation of inner layer boundaries. To this end, a two-dimensional physical model analogous to the lining structure was built and a special ultrasonic sweep source was devised. The measurements were carried out in the sweep frequency range 10 ∼ 60 KHz, as peformed in the regular reflection survey(e.g. roll-along technique). The measured data were further rearranged with a proper software (cross-correlation). The resulting seismograms(raw data) showed quitely similar features to those from a single-pulse source, in which high frequency content of reflection events could be considerably emphasized, as expected. The data were further processed by using a regular data processing system "FOCUS" and the results(stack section) were well associated with the known model structure. In this context, it is worthy to note that in view of measuring condition the sweep source would be applied to benefit the penetration of high frequency energy into the media and to enhance the resolution of reflection events.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.81-86
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• 2016

$Eu^{3+}$-doped $MgMoO_4$ phosphor thin films were deposited on quartz substrates by radio frequency magnetron sputtering with changing various growth temperatures. The effects of growth temperature on the structure, transmittance, optical band gap, and luminescence of the phosphor thin films were characterized. All the phosphor thin films, irrespective of growth temperature, showed a monoclinic structure with a main (220) diffraction peak. The thin film deposited at a growth temperature of $400^{\circ}C$ indicated an average transmittance of 90% in the wavelength range of 500 ~ 1100 nm and band gap energy of 4.81 eV. The excitation spectra of the phosphor thin films consisted of a broad charge transfer band peaked at 284 nm in the range of 230 ~ 330 nm and two weak peaks located at 368 and 461 nm, respectively. The emission spectra under ultraviolet excitation at 284 nm exhibited a sharp emission peak at 614 nm and several weak bands. All the phosphor thin films showed high asymmetry ratio values, indicating that $Eu^{3+}$ ions incorporated into the host lattice occupied at the non-inversion symmetry sites. The results suggest that the growth temperature plays an important role in growing high-quality phosphor thin films.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• ETRI Journal
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• v.38 no.2
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• pp.265-271
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• 2016

We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.411-414
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• 2002

The CdTe semiconductor detector has a higher detection efficiency for x-rays and $\square$amma rays and a wider energy band gap compared with Si and Ge semiconductor detectors. Therefore, the size of the detector element can be made small, and can be operated at room temperature. The interaction between a CdTe detector and incident x-rays is mainly photoelectric absorption in the photon energy range of up to 100 keV. In this energy range, Compton effects are almost negligible. We have developed a 256 channel CdTe array detector system for monochromatic x-ray CT using synchrotron radiation. The CdTe array detector system, the element size of which is 1.98 mm (h) x 1.98 mm (w) x 0.5 mm (t), was operated in photon counting mode. In order to improve the spatial resolution, we tilted the CdTe array detector against the incident parallel monochromatic x-ray beam. The experiments were performed at the BL20B2 experimental hutch in SPring-8. The energy of incident monochromatic x-rays was set at 55 keV. Phantom measurements were performed at the detector angle of 0, 30 and 45 degrees against the incident parallel monochromatic x-rays. The linear attenuation coefficients were calculated from the reconstructed CT images. By increasing the detector angle, the spatial resolutions were improved. There was no significant difference between the linear attenuation coefficients which were corrected by the detector angle. It was found that this method was useful for improving the spatial resolution in a parallel monochromatic x-ray CT system.

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Journal of Welding and Joining
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• v.7 no.4
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• pp.56-67
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• 1989

In this study, the possibility of evaluating the peculiar fracture strength of weldment in high strength steels was investigated by means of a small punch(SP) test. In order to obtain the ductile-brittle transition temperature(DBTT) of SP energy by which the fracture strength of weldment in structural steels such as SS41 and SM53B steels had been evaluated in our preceding publication, the effects of notches and loading rates on SP energy were discussed. It was found that the correspondence of SP energy to critical COD at test temperature -196.deg. C showed a linear relation with some deviation. The empirical correlation with scatter band, Esp/(Esp)p = 1.67[.delta./(.delta./sub c//(.delta./sub c/)/sub p/]-0.55, was developed between the SP energy ratio and critical COD ratio of each weld structure compared with parent material at test temperature -196.deg. C. In addition, there did not appear to be a significant effect of test materials and specimen size etc. on the correlation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1057-1062
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• 2008

The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.

• Bulletin of the Korean Chemical Society
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• v.26 no.1
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• pp.151-156
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• 2005

The conformational dynamics of heme pocket, a small vacant site near the binding site of heme proteins -myoglobin (Mb) and hemoglobin (Hb), was investigated after photolysis of carbon monoxide from MbCO and HbCO in D$_2$O solution at 283 K by probing time-resolved vibrational spectra of photolyzed CO. Two absorption bands, arising from CO in the heme pocket, evolve nonexponentially in time. The band at higher energy side blue shifts and broadens with time and the one at lower energy side narrows significantly with a negligible shift. These spectral evolutions are induced by protein conformational changes following photolysis that modify structure and electric field of heme pocket, and ligand dynamics in it. The conformational changes affecting the spectrum of photolyzed CO in heme pocket likely modulates ligand-binding activity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.4
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• pp.40-50
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• 1993

In this paper, MODFET devices with various gate length are simulated using the Monte-Carlo method. The number of superparticle is 5000 and the Poisson equation is solved to obtain field distribution. The structure of MODFET is n-AlGaAs/i-AlGaAs/iGaAs and doping concentration of n-AlGaAs layer is 1${\times}10^{17}/cm^{3}$ and the thickness is 500.angs., and the thickness of i-AlGaAs is 50$\AA$. The devices with gate length 0.2$\mu$m, 0.5$\mu$m, 1.0$\mu$m respctively are simulated and the current-voltage curves and transport characteristics of that devices are obtained. Occupancy of each subband and electron energy distribution and conduction energy band in channel have been analyzed to obtain transport characteristics, and particles transposed from source to drain have been analyzed to current-voltage curves. Current level is highest for the device of Lg=0.2$\mu$m and transconductance of this device is 310mS/mm.