• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.306.1-306.1
• /
• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• 한국공작기계학회논문집
• /
• 제14권2호
• /
• pp.33-41
• /
• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.35.1-35.1
• /
• 2011

New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

• 한국재료학회지
• /
• 제18권11호
• /
• pp.623-627
• /
• 2008

For possible applications as luminescent materials for white-light emission using UV-LEDs, $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphors were prepared by a solid state reaction. The photoluminescence properties of the phosphor were investigated under ultraviolet ray (UV) excitation. The prepared phosphor powders were characterized to from a single phase of a monoclinic crystalline structure by a powder X-ray diffraction analysis. In the photoluminescence spectra, the $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphor showed an intense emission band centered at the 584 nm wavelength due to the f-d transition of the $Eu^{2+}$ activator. The optimum concentration of $Eu^{2+}$ activator in the $Ba_2Mg(PO_4)_2$ host, indicating the maximum emission intensity under the excitation of a 395 nm wavelength, was 5 at%. In addition, it was confirmed that the $Eu^{2+}$ ions are substituted at both $Ba^{2+}$ sites in the $Ba_2Mg(PO_4)_2$ crystal. On the other hand, the critical distance of energy transfer between $Eu^{2+}$ ions in the $Ba_2Mg(PO_4)_2$ host was evaluated to be approximately 19.3 A. With increasing temperature, the emission intensity of the $Ba_2Mg(PO_4)_2$:Eu phosphor was considerably decreased and the central wavelength of the emission peak was shifted toward a short wavelength.

• Applied Science and Convergence Technology
• /
• 제24권3호
• /
• pp.72-76
• /
• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• 대한전자공학회논문지SD
• /
• 제42권3호
• /
• pp.9-16
• /
• 2005

[ $Si_{1-x}Ge_x$ ] 위의 Si 반전층에서의 이동도를 반전층에서의 양자현상(버금띠 에너지와 파동함수)과 완화시간어림셈을 고려하여 계산하였다. 반전층에서의 양자현상은 슈뢰딩거 방정식과 포아슨 방정식을 자체 모순없이 계산하여 얻었다 완화시간은 밸리내 산란과 밸리사이 산란을 고려하여 계산하였다. 그 결과 Ge 함량이 증가됨에 따라 이동도가 증가되는 이유는 4-폴드 밸리에 존재하는 전자의 이동도보다 2-폴드 밸리에 존재하는 전자의 이동도가 약 3배 정도 크며 대부분의 전자가 밸리의 분리에 의해 2-폴드 밸리에 존재하기 때문이라는 것을 알 수 있었다. 한편, 포논 산란만을 고려한 이동도를 실험치와 일치시키기 위하여 전체 이동도에는 반전층 계면에서의 산란과 쿨롱 산란을 포함시켰다. 계산된 전계, 온도, 그리고 Ge 함량에 의존하는 이동도는 실험치와 근접하도록 변형포텐셜을 설정하였으며 정확한 결과를 위해서는 Si 에너지띠의 비포물성을 고려해야함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.257-265
• /
• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• Bulletin of the Korean Chemical Society
• /
• 제35권8호
• /
• pp.2295-2298
• /
• 2014

To effectively destruct 2-chlorophenol, a representative sterile preservative, nanometer-sized Mn (0.5, 1.0, 3.0 mol %)-incorporated $TiO_2$ powders were synthesized by a solvothermal method. XRD result demonstrated that the Mn ingredients were perfectly inserted into $TiO_2$ framework. The Mn-$TiO_2$ particles exhibited an anatase structure with a particle size of below 20 nm. The absorbance was shifted to the higher wavelength on Mn-$TiO_2$ compared to that of $TiO_2$. Otherwise, the PL intensities which has a close relationship for recombination between holes and electrons significantly decreased on Mn-$TiO_2$. The photodecomposition for 2-chlorophenol in a liquid system was enhanced over Mn-doped $TiO_2$ compared with pure $TiO_2$: 2-chlorophenol of 50 ppm was completely decomposed after 12 h when 1.0 mol % Mn-$TiO_2$ was used. Consequently, the core of this paper is as follows. introducing Mn into $TiO_2$ framework reduced the band-gap, moreover, it played as an electron capture resulted to lower recombination between electrons and holes during photocatalytic reaction for removal of 2-cholophenol.

• 한국결정성장학회지
• /
• 제5권2호
• /
• pp.109-121
• /
• 1995

SiC/Co 반응커플을 Ar/4 vol% $H_2$분위기하에서 $950^{\circ}C$에서 $1250^{\circ}C$ 범위에서 4시간에서 100시간까지 열처리하였다. $950^{\circ}C$ 이상의 온도에서의 고상반응으로 여러 가지 규소화물과 탄소석출이 형성되었다. 이 반응 zone에 있어서의 전형적인 반응층의 순서는 $SiC/CoSi + C/Co_2Si + C/Co_2Si/Co_2Si + C/{\cdots\cdots}/Co_2Si/Co$이었다. 그리고 탄소 석출거동을 동반한 주기적인 띠구조의 형성기구가 반응운동학과 열역학적인 고찰을 통하여 조사되어졌고 논하여졌다. 이 반응의 zone의 서장은 시간의 함수관계를 가지며 이러한 반응운동학이 반응상수의 측정을 통하여 제시되어진다. 또한 microhardness 측정을 통하여 반응 zone의 기계적인 물성이 조사되어졌다.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 추계학술대회 논문집
• /
• pp.233-244
• /
• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.