• Title/Summary/Keyword: Energy Band Structure

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Optical Properties of Metal Halide Perovskite Nanocrystals with Addition of Metal Bromide (금속 브롬화물의 첨가에 따른 금속 할라이드 페로브스카이트 나노결정의 광학적 특성 변화)

  • Yun, Seokjin;Choi, Jihoon
    • Journal of the Korean institute of surface engineering
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    • v.52 no.6
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    • pp.334-341
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    • 2019
  • Organometal halide perovskite materials have attracted much attention in the photovoltaic and light emitting devices due to the compositional flexibility with AMX3 formula (A is an organic amine cation; M is a metal ion; X is a halogen atom). The addition of homovalent or heterovalent metal cations to the bulk organohalide perovskites has been performed to modify their energy band structure and the relevant optoelectronic properties by ligand-assisted ball milling. Here, we report CH3NH3Pb1-xMxBr3 nanocrystals substituted by metallic cations (M is Sn2+, In3+, Bi3+; x = 0, 0.01, 0.02, 0.05, 0.1, 0.2). Photoluminescence and quantum yield was significantly reduced with increasing metallic cations content. These quenching effect could be resulted from the metal cations that behave as a non-radiative recombination center.

Effect of Ni addition on anodically deposited $MnO_2$ film (Anodic deposition된 $MnO_2$ 막에 있어서 Ni 첨가 영향)

  • Kim, Bong-Seo;Lee, Dong-Yoon;Lee, Hee-Woong;Chung, Won-Sub
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1535-1537
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    • 2003
  • Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

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One-step Physical Method for Synthesis of Cu Nanofluid in Ethylene Glycol

  • Bac, L.H.;Yun, K.S.;Kim, J.S.;Kim, J.C.;Rhee, C.K.
    • Journal of Powder Materials
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    • v.17 no.6
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    • pp.464-469
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    • 2010
  • The Cu nanofluid in ethylene glycol was prepared by electrical explosion of wire, a novel one-step method. The X-ray diffraction, field emission scanning electron microscope and transmission electron microscope were used to study the properties of Cu nanoparticles. The results showed that the nanoparticles were consisted of pure face-centered cubic structure and near spherical shape with average grain size of 65 nm. Ultraviolet-visible spectroscopy (UV-Vis) confirmed Cu nanoparticles with a single absorbance peak of Cu surface plasmon resonance band at 600 nm. The nanofluid was found to be stable due to high positive zeta potential value, +51 mV. The backscattering level of nanofluid in static stationary was decreased about 2% for 5 days. The thermal conductivity measurement showed that Cu-ethylene glycol nanofluid with low concentration of nanoparticles had higher thermal conductivity than based fluid. The enhancement of thermal conductivity of nanofluid at a volume fraction of 0.1% was approximately 5.2%.

The Effect of Thermal Annealing and Growth of ZnO Thin Film by Pulesd Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.160-162
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    • 2003
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

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Inorganic Phosphor Materials for White LED Display (백색 엘이디 디스플레이를 위한 형광체 재료 기술)

  • Lee, Jung-Il;Ryu, Jeong Ho
    • Journal of Institute of Convergence Technology
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    • v.4 no.1
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    • pp.21-27
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    • 2014
  • White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

Covariance-driven wavelet technique for structural damage assessment

  • Sun, Z.;Chang, C.C.
    • Smart Structures and Systems
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    • v.2 no.2
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    • pp.127-140
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    • 2006
  • In this study, a wavelet-based covariance-driven system identification technique is proposed for damage assessment of structures under ambient excitation. Assuming the ambient excitation to be a white-noise process, the covariance computation is shown to be able to separate the effect of random excitation from the response measurement. Wavelet transform (WT) is then used to convert the covariance response in the time domain to the WT magnitude plot in the time-scale plane. The wavelet coefficients along the curves where energy concentrated are extracted and used to estimate the modal properties of the structure. These modal property estimations lead to the calculation of the stiffness matrix when either the spectral density of the random loading or the mass matrix is given. The predicted stiffness matrix hence provides a direct assessment on the possible location and severity of damage which results in stiffness alteration. To demonstrate the proposed wavelet-based damage assessment technique, a numerical example on a 3 degree-of-freedom (DOF) system and an experimental study on a three-story building model, which are all under a broad-band excitation, are presented. Both numerical and experimental results illustrate that the proposed technique can provide an accurate assessment on the damage location. It is however noted that the assessment of damage severity is not as accurate, which might be due to the errors associated with the mode shape estimations as well as the assumption of proportional damping adopted in the formulation.

Tuning of Electro-optical Properties of Nano-structured SnO2:Ga Powders in a Micro Drop Fluidized Reactor

  • Lim, Dae Ho;Yang, Si Woo;Yoo, Dong June;Lee, Chan Gi;Kang, Yong
    • Korean Chemical Engineering Research
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    • v.57 no.2
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    • pp.259-266
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    • 2019
  • Tuning of electro-optical properties of nano-structured $SnO_2:Ga$ powders in a micro drop fluidized reactor (MDFR) was highly effective to enhance the activities of powders to be used as sensor materials. The tuning was conducted continuously in a facile one-step process during the formation of powders. The microscopic hydrodynamic forces affected the band gap structure and charge transfer of $SnO_2:Ga$ powders through the oxygen and interfacial tin vacancies by providing plausible pyro-hydraulic conditions, which resulted in the decrease in the electrical resistance of the materials. The analyses of room-temperature photoluminescence (PL) spectra and FT-IR exhibited that the tuning could improve the surface activities of $SnO_2:Ga$ powders by adjusting the excitation as well as separation of electrons and holes, thus maximizing the oxygen vacancies at the surface of the powders. The scheme of photocatalytic mechanism of $SnO_2:Ga$ powders was also discussed.

A Study on Electrostatic Discharging in Ultrapure and Electrolyzed Waters Using Kelvin's Thunderstorm Effect (캘빈방전 효과를 이용한 초순수 및 전해이온수의 정전기 방전 연구)

  • Kim, Hyung-won;Jung, Youn-won;Choi, In-sik;Choi, Byung-sun;Choi, Donghyeon;Ryoo, Kun-kul
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.1
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    • pp.5-11
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    • 2022
  • Despite the increasing importance of manufacturing and application R&D for ultrapure deionized water and electrolyzed ion water, various and systematic studies have not been conducted until now. In this study, the electrostatic discharge (ESD) behavior of electrolyzed ion water using a proton exchange membrane(PEM) was evaluated according to the type, flow rate, and bubble of electrolyzed ion water. In addition, by observing that Oxidation Reduction Potential (ORP) value returns to the unique value of electrolyzed ion water after electrostatic discharge, the possibility of two types of ions participating in electrostatic discharge ((H2O)n+ (assumed)) and ions for maintaining the characteristics of electrolyzed water could be inferred. In order to confirm the chemical structure and characteristics of the cations, in-depth research related to water molecular orbital energy or band gap should be followed.

MODIFICATION OF INITIALLY GROWN BN LAYERS BY POST-N$^{+}$ IMPLANTATION

  • Byon, E-S.;Lee, S-H.;Lee, S-R.;Lee, K-H.;Tian, J.;Youn, J-H.;Sung, C.
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.351-355
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    • 1999
  • BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

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Post-annealing Effect of NiO Thin Film Grown by RF Sputtering System on 4H-SiC Substrate (4H-SiC 기판 위에 RF Sputter로 증착된 NiO 박막의 후열처리 효과)

  • Soo-Young Moon;Min-Yeong Kim;Dong-Wook Byun;Geon-Hee Lee;Sang-Mo Koo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.2
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    • pp.170-174
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    • 2023
  • Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.