• 제목/요약/키워드: Emitters

검색결과 307건 처리시간 0.026초

Switch-on Phenomena and Field Emission from Single-Walled Carbon Nanotubes Embedded in Glass

  • Daradkeh, Samer I.;Mousa, Marwan S.
    • Applied Microscopy
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    • 제47권3호
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    • pp.86-94
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    • 2017
  • In this study, we will describe a new design of carbon nanotubes tip. Single-walled carbon nanotubes produced using high-pressure CO over Fe particles (HiPCO) at CNI, Houston, TX used in this study. These tips were manufactured by employing a drawing technique using glass puller. Field electron microscopies with tips (cathode) to screen (Anode) separation of ~10 mm was used to characterize the electron emitters. The system was evacuated down to base pressure of (${\sim}10^{-8}$ mbar) when baked at up to (${\sim}200^{\circ}C$) over night. An electron field emission patterns, as well as current versus voltage characteristics and Fowler-Nordheim plots, are discussed.

Effects of Environmental Gases on Emission Current in Carbon Nanotube

  • Kim, T.S.;Ahn, B.K.;Kim, D.H.;Shin, H.Y.;Seong, M.S.;Cho, Y.R.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.700-702
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    • 2004
  • The dependence of environmental gases such as Ar, $O_2$ on the emission current from carbon nanotube emitters was examined in this study. Based on our experiments, the current density is decreased in single-wall carbon nanotubes (SWNTs), but is increased in multi-wall carbon nanotubes (MWNTs) as the vacuum level decreases from $10^{-7}$ Torr to $10^{-4}$ Torr by the inflow purging gases. The current density subsequently recovered as the vacuum level increased to $10^{-7}$ Torr when gas inflow stopped. From those results, we conclude that the MWNTs have completely different degradation characteristics in comparison to SWNTs excluding the effect of binder materials.

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Active-Matrix Field Emission Display Based on CNT Emitter and a-Si TFT

  • Song, Yoon-Ho;Kim, Kwang-Bok;Hwang, Chi-Sun;Lee, Sun-Hee;Park, Dong-Jin;Lee, Jin-Ho;Kang, Kwang-Yong;Hur, Ji-Ho;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.923-926
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    • 2004
  • Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.

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A New Structure of Triode-type CNT-FEAs for Enhanced Electron Emission and Beam Focusing

  • Jun, Pil-Goo;Kwak, Byung-Hwak;Noh, Hyung-Wook;Lee, Soo-Myun;Uh, Hyung-Soo;Park, Sang-Sik;Ko, Sung-Woo;Cho, Euo-Sik;Lee, Jong-Duk
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.456-458
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    • 2004
  • We proposed a novel triode-type carbon nanotube field emitter arrays in which extracted gate is surrounded by CNT emitters. We carried out 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEAs using the finite element method and compared the results with those obtained from the structure of conventional CNT-FEAs. It was found that the proposed structure could reduce the turn-on voltage for electron emission and improve beam focusing.

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산업용 테라헤르츠 비파괴 검사 기술 (Terahertz Non-destructive Testing Technology for Industrial Applications)

  • 이의수;문기원;이일민;박동우;최다혜;신준환;김현수;박정우;박경현
    • 전자통신동향분석
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    • 제33권3호
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    • pp.59-69
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    • 2018
  • Terahertz (THz) imaging and spectroscopy have been developed as non-destructive testing methods for various industrial applications. However, they have not been widely adopted in real applications owing to a high system price and the large size of conventional THz time-domain spectroscopy systems, which are based on ultrashort optical pulse lasers. Recently, various types of compact THz emitters and detectors have become available. As a result, THz non-destructive test (NDT) systems have become viable solutions. Herein, we briefly review the recent advances in THz NDT techniques adopting continuous-wave THz systems, including our recent results of a THz-based waterproof test system and an electrical connection inspection system for car manufacturing.

Advanced Silicon Solar Cell Structures for Space Applications

  • Lee, S.H.;Kim, D.S.
    • 태양에너지
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    • 제17권2호
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    • pp.23-33
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    • 1997
  • This paper reviews the advanced solar cell structures used in space. These are the structures which incorporate the back surface field and reflectors with very shallow and lightly doped emitters. Their use in space has shown that the thinner cells are more resistive to radiation damage than the thicker ones. It has been found that the charged particles affect both the surface and bulk of the cells used in space. This causes degradation in the output power, which in effect, can be explained by the degrading diffusion length of the cells. The PERL cells showed higher BOL(beginning of life) efficiency and almost the same EOL(end of life) efficiency as structures with wrap-around contact configuration fabricated on 10 ${\Omega}cm$ resistivity substrates. This observation lead to a conclusion that, the space cells do not necessarily need to have very high BOL efficiency except in specific missions which require such.

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Fabrication of Sputtered Gated Silicon Field Emitter Arrays with Low Gate Leakage Currents by Using Si Dry Etch

  • Cho, Eou Sik;Kwon, Sang Jik
    • Transactions on Electrical and Electronic Materials
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    • 제14권1호
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    • pp.28-31
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    • 2013
  • A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

셀렌화납 코팅을 통한 이중벽 탄소나노튜브의 전계방출특성 향상 (Enhanced field emission properties of double-walled carbon nanotubes coated with lead selenide nanoparticles)

  • 신동훈;이철진;최영민;김종웅
    • 전기학회논문지
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    • 제59권3호
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    • pp.594-598
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    • 2010
  • We studied on the field emission properties of double-walled carbon nanotubes (DWCNTs) coated with lead selenide (PbSe) nanoparticles. PbSe nanoparticles were uniformly attached on the surface of the DWCNTs by a simple chemical process. The PbSe-coated DWCNTs showed highly increased emission current density and enhanced emission stability over 20 h, compared with raw DWCNTs. We consider that the enhanced field emission properties of PbSe-coated DWCNTs were attributed to the increased field enhancement factor and lowered work function of the emitters.

질량 분석기에 응용할 수 있는 탄소나노튜브를 이용한 전자방출원 제작 (Fabrication of CNT(Carbon Nanotubes) Emitter for Mass Spectrometer)

  • 정대중;윤현중;정광우;양상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.293-296
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    • 2003
  • We report on the fabrication and field emission of carbon nanotube field emitters for mass spectrometer. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by thermal chemical vapour deposition as cathodes, Electrons emitted from a CNT are to ionize some sample molecules. We have successfully attained patterned carbon nanotubes grown on two-dimensional 0.7 mm by 0.7 mm Ni square blocks on Si. The emission characteristics show that the field emission initiates at 200 V.

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이온 플레이팅용 장수명 플라즈마 건 장치의 개발 (Development of a Plasma Gun System for Ion Plating with Long Lifetime)

  • 최영욱
    • 전기학회논문지
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    • 제57권1호
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    • pp.78-81
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    • 2008
  • A hollow cathode which has extremely stable discharge characteristic has been developed. This is composed of the two separated lanthanum hexaboride(LaB6) of a disk type in the tube as the electron emitters. The way of design is of great advantage to extend the surface discharge area of the LaB6, which is also useful for optimal fixing of the LaB6. The hollow cathode is capable of producing 30 kW(100 V, 300 A) of power continuously. Because the generated plasma beam with the high temperature(above $3000^{\circ}C$) from the hollow cathode passes through the center hole of the two intermediate electrodes, it is designed with the high temperature material of the tungsten and the suitable structure of the water cooling. The combinations of the hollow cathode and the two intermediate electrodes are practically useful for the ion plating plasma beam source.