• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.124-125
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• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1244_1245
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• 2009

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1224-1225
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• 2008

The results of the experiment that was conducted on the electron emission property and the long-term stability of the emission current in various carbon nanotubes (CNTs)-based field emitters with a CNT/catalyst/buffer/W-tip configuration are presented herein. CNT-based field emitters were fabricated by varying the (TiN, Al/Ni/TiN) buffer layer and the (Ni, Co) catalyst material. This study aimed to elucidate how the buffer layers and catalyst materials affect the structural properties of CNTs and the long-term stability of CNT emitters. Raman spectroscopy, field emission SEM, and high-resolution TEM were used to analyze the crystalline structure, surface morphologies, and nanostructures of all the grown CNTs. X-ray photoelectron spectroscopy (XPS) was used to monitor the chemical bonds of all the buffer layers and catalysts. Electron emission measurement and a long-term (up to 40h) stability test were carried out using a compactly designed field emission measurement system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.5-9
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• 2019

Optical emission spectroscopy is used to identify chemical species and monitor the changes of process results during the plasma process. However, plasma process monitoring or fault detection by using emission signal variation monitoring is vulnerable to background signal fluctuations. IR heaters are used in semiconductor manufacturing chambers where high temperature uniformity and fast response are required. During the process, the IR lamp output fluctuates to maintain a stable process temperature. This IR signal fluctuation reacts as a background signal fluctuation to the spectrometer. In this research, we evaluate the effect of infrared background signal fluctuation on plasma process monitoring and improve the plasma process monitoring accuracy by using simple infrared background signal subtraction method. The effect of infrared background signal fluctuation on plasma process monitoring was evaluated on $SiO_2$ PECVD process. Comparing the $SiO_2$ film thickness and the measured emission line intensity from the by-product molecules, the effect of infrared background signal on plasma process monitoring and the necessity of background signal subtraction method were confirmed.

• 한국근적외분광분석학회:학술대회논문집
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• 한국근적외분광분석학회 2001년도 NIR-2001
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• pp.3102-3102
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• 2001

Constituents of several .representative seaweeds, such as wakame Undaria pinnatifida; hijikia Hizikia fusifome; and kombu Laminaria japonica, were found to have fairly large reaction rates determined by quenching experiments of emission spectra in the near-infrared region (1max: 1270 nm) from singlet oxygen (102). Emission spectra of singlet oxygen generated from an aqueous solution of Rose Bengal under irradiation with a green laser (330 nm) were measured by a near-infrared (NIR) emission spectrometer constructed in our laboratory. The quenching experiments were as follows: Intensities of emission spectra were measured in the absence (I0) and in the presence of the seaweed constituents (I): Ratios of I0/I were plotted against every concentration of the quenchers (Stern-Volmer plots) which gives a straight line. The slope of each line gives a kqt value which gives a quenching constant kq value (an antioxidative constant against singlet oxygen) when the t value (half-life time of singlet oxygen in the solvent used) was given. The determined reaction rates are between 103-105 (g/l)-ls-1; the larger ones are as large as that of ascorbic acid, 8.4 ${\times}$ 104 (g/1)-ls-1. Most of these seaweed constituents also showed antioxidative activity against auto-oxidation and superoxide as well as their immunological enhancing activity. These results suggest a possibility that dietary fibers which are supposed to prevent the large-intestine cancer by their physical properties may prevent the cancer, at least in parts, by their chemical, antioxidative activity.

• 한국재료학회지
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• 제21권9호
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• pp.509-514
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• 2011

In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

• 한국표면공학회지
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• 제29권6호
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• pp.648-653
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• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.

• 플랜트 저널
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• 제16권3호
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• pp.47-52
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• 2020

본 연구에서는 알루미늄으로 제작된 심해 장비의 부식 저항 능력 향상시키기 위해 알루미늄 부식 방지 방법과 측정방법을 조사하였다. 조사된 부식 방지 방법은 Cathodic Protection(음극화 보호), Conversion Coating, Anodizing, 및 Organic Coating이었다. 그리고 간단하게 조사된 측정 방법은 Scanning Electron Microscope (SEM), Electrochemical Impedance Spectroscopy (EIS), Glow discharge optical emission spectrum spectroscopy (GD-OES), Fourier Transform Infrared Spectroscopy (FT-IR), Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS), Scanning Vibrating Electrode Technique (SVET), Contact Angle(접촉각), Interfacial Tension (경계면 장력)이었다. 알루미늄 부식을 방지하기 위해 널리 사용되는 방법은 Anodizing과 Organic Coating이었으며, 부식 측정을 위해서는 여러 방법들이 골고루 사용되었다. 그 중 많이 사용되는 방법은 표면의 구조를 관찰하 위한 SEM과 부식 저항 능력을 측정하기 위한 접촉각 측정이었다.