• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.1-140.1
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• 2013

The native silicon-oxide (SiOx) layer at the metal/Silicon interface acts as an electrical resistance to the metal contact of devices. Various methods are proposed for removing this layer, such as sputtering before metal contact formation or high temperature annealing. We studied the chemical evolution of the Au/SiOx/Si system during the annealing at $500^{\circ}C$ using a spatially resolved photoelectron emission method. Scanning photoelectron emission microscopy (SPEM) and core level spectra from local area of the sample show the inhomogeneous oxidation and formation of silicide of Au, as well as valence band spectra reveals the role of Au atoms during the dissociation process of SiOx.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.102-105
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• 2012

The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

• Macromolecular Research
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• v.12 no.5
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• pp.501-506
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• 2004

We have investigated the spectral properties of DNA, including its electric absorption, circular and linear dichroism (CD and LD), and fluorescence emission, in the DNA-linear polyethyleneimine (LPEI) and DNA-branched polyethyleneimine (BPEI) complexes at various polymer concentrations. The spectral properties of both complexes are similar. We observed a relatively moderate change in the absorption and CD spectra at low amine/DNA phosphate (NIP) ratios (< 0.5), followed by a drastic collapse within the N/P range from 0.8 and 1.0. The absorption and CD spectra recovered as the N/P ratio increased to ca. 1.2. In contrast, the LD and emission of ethidium intercalated between the DNA bases decreased almost linearly at N/P ratios between 0.0 and 1.0. These spectra never recovered at higher N/P ratios. We believe that the moderate changes in the spectrum at low N/P ratios occurred because of electrostatic interactions between DNA and BPEI, while the collapsed spectra at N/P ratios between 0.5 and 1.5 occurred because of condensation/aggregation of the DNA. Considering the structure of the polymers, we suggest that the secondary amino group of LPEI and all three amino groups of BPEI are equally involved in DNA condensation.

• Journal of Photoscience
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• v.1 no.2
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• pp.131-133
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• 1994

Optical spectra of 5-amino-2H-1, 2, 4-thiadiazoline-3-one (AT) and some 2-aroyl-5-aroylamino derivatives are reported. Absorption spectra of 2-aroyl-5-aroylamino derivatives show bathochromic shift due to AT group and other substituents of phenyi ring. Weak emission is observed for some derivatives.

• Bulletin of the Korean Chemical Society
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• v.18 no.8
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• pp.819-823
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• 1997

The luminescence and photoexcitation spectra of cis-[Cr(cyclam)(NO3)2]NO3·½ H2O (cyclam=1,4,8,11-tetraazacyclotetradecane) taken at 77 K are reported. The infrared and visible spectra at room-temperature are also measured. The vibrational intervals of the electronic ground state are extracted from the far-infrared and emission spectra. The ten electronic bands due to spin-allowed and spin-forbidden transitions are assigned. With observed transitions, a ligand field analysis has been performed to determine the bonding property of nitrate group in the chromium(Ⅲ) complex. According to the results, it is found that nitrate ligand has weak σ- and π-donor properties toward chromium(Ⅲ).

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.31-34
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• 2013

Trivalent cerium-ion-doped $Y_3(Al,\;Ga)_5O_{12}$ nanoparticle phosphor nanoparticles were synthesized using the reverse micelle process. The Ce doped $Y_3(Al,\;Ga)_5O_{12}$ particles were obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase and poly(oxyethylene) nonylphenyl ether (Igepal CO-520) as the non-ionic surfactant. The crystallinity, morphology, and thermal properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were characterized by thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and transmission electron microscopy. The crystallinity, morphology, and chemical states of the ions were characterized; the photo-physical properties were studied by taking absorption, excitation, and emission spectra for various concentrations of cerium. The photo physical properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were studied by taking the excitation and emission spectra for various concentrations of cerium. The average particle size of the synthesized YAG powders was below $1{\mu}m$. Excitation spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ samples were 485 nm and 475 nm, respectively. The emission spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ were around 560 nm and 545 nm, respectively. $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ is a red-emitting phosphor; it has a high efficiency for operation under near UV excitation, and may be a promising candidate for photonic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.277-278
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• 2009

We have studied an angular dependence of emission pattern of top-emssion organic light-emitting diodes (TEOLED). Device structure is Al(100nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(2nm)/Ag(30nm). N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) and tris-(8-hydroxyquinoline) aluminium ($Alq_3$)were used as a hole transport layer and emission layer, respectively. Organic layers and cathode were thermally evaporated at $2\times10^{-5}$torr. The evaporation rate of the organic material was maintained to be $1.5\sim2.0{\AA}/s$, and that of metal layer to be $0.5\sim5{\AA}/s$. A transmittance of a cathode electrode(Al/Ag) in visible region is about 25~30%. In order to measure view-angle dependent intensity, electroluminenscence spectra of the device at each angle were integrated. Angle dependent emission spectra of the device do not show blue shift. Emission intensity of the device that the going straight characteristic is stronger the bottom-emission organic light-emitting diodes is shown.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.3
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• pp.282-292
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• 2007

The present paper describes the results of high speed photography, acoustic emission (AE) detection and plasma light emission (LE) measurement during $CO_2$ laser welding of 304 stainless steel in different processing conditions. Video images with high spatial and temporal resolution allowed to observe the melt dynamics and keyhole evolution. The existence of keyhole was confirmed by the slag motion on the weld pool. The characteristic frequencies of flow instability and keyhole fluctuations at different welding speed were measured and compared with the results of Fourier analyses of temporal AE and LE spectra. The experimental results were compared with the newly developed numerical model of keyhole dynamics. The model is based on the assumption that the propagation of front part of keyhole into material is due to the melt ejection driven by laser induced surface evaporation. The calculations predict that a high speed melt flow is induced at the front part of keyhole when the sample travel speed exceeds several 10 mm/s. The numerical analysis also shows the hump formation on the front keyhole wall surface. Experimentally observed melt behavior and transformation of the AE and LE spectra with variation of welding speed are qualitatively in good agreement with the model predictions.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.70-74
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• 2017

Up-conversion (UC) and down-conversion (DC) luminescence of $LuNbO_4:0.18Yb^{3+}$, $xEr^{3+}$ (x = 0.01-0.07) powders were investigated. Post-annealed powders were composed of a single $LuNbO_4$ phase with a monoclinic fergusonite structure, whereas as-calcined powders contained a small amount of the $Li_3NbO_4$ impurity phase. Under near infrared radiation, the UC spectra of the post-annealed powders exhibited the strong green and weak red emission peaks assigned to the transition of $^2H_{11/2}/^4S_{3/2}$ and $^4F_{9/2}$ to the ground state ($^4I_{15/2}$) of $Er^{3+}$ ions, respectively; the green and red emission intensities were approximately 330 and 270% stronger, respectively, than those of the as-calcined powders. A two-photon UC process was involved in the emission as a result of an energy transfer from $Yb^{3+}$ to $Er^{3+}$. Under ultraviolet radiation, the DC spectra exhibited broad blue and sharp green emission bands. The DC mechanism was explained using self-activated $[NbO_4]^{3-}$ niobates and an energy transfer from $[NbO_4]^{3-}$ to $Er^{3+}$.