• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.19-22
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• 1999

N-doped and low-hydrogenated DLC thin films were coated on the Mo-tip FEAs in order to improve the field emission performance and their electrical properties were evaluated. The fabricated devices showed improved field emission performance in terms of turn-on voltage, emission current and current fluctuation. This result might be caused both by the shift of Fermi level toward conduction band by N-doping and by the inherent stability of DLC material. Furthermore, the transconductance of the DLC-coated Mo-tip FEA and electrical conductivity and optical band-gap of the deposited DLC films were investigated.

• Proceedings of the Korean Society for Quality Management Conference
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• 2009.10a
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• pp.234-240
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• 2009

The growing mobile products market is expected energy efficiency. So product design is more important focusing on reducing power consumption than improving technology of color sense. A Organic light emission diode is in limelight of the best display to satisfy market expectation. A Organic light emission diode is achieved low power consumption, pixel response which was fast for its time, high contrast of brightness and wide color reproduction raio. Therefore there is a fierce competition for the organic light emission diode development between a country and another country over business. The technical value's life is short because of a fierce development competition, and there is little probability that technical success become business success. In this study, the purpose is reduce the time for life test by accelerated current and it can do production possible design by accelerated life model in design phase.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.131-132
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• 2000

We prepared Si emitters coated with a MOCVD $CoSi_2$ layer to improve the emission properties. The $CoSi_2$ layer was grown on Si field emitters in situ by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 600 ${\sim}$ $650^{\circ}C$. The $CoSi_2$ coated field emitters showed enhanced emission properties of current-voltage characteristics, which were due to the increase of emitting area from Fowler-Nordheim plot. And the emission current fluctuation decreased due to the chemically stable surface properties of $CoSi_2$.

• Progress in Superconductivity
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• v.4 no.2
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• pp.104-108
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• 2003

We have measured the transport properties of $Bi_2$$Sr_2$$CaCu_2$$O_{8+d}$ (BSCCO) intrinsic Josephson junction mesa. Transport measurements with current flow along the c-axis, perpendicular to the layer of mesa showed multi-branch structures on the current-voltage characteristics. For single intrinsic junctions, the microwave radiation appears in the form of three different modes of oscillations, which include Josephson emission, nonequilibrium broad emission and sharp coherent microwave emission. Mutual phase interactions between two-mesas structures of BSCCO intrinsic Josephson junctions were studied. The results were explained within the framework of the Josephson plasma excitation model due to quasiparticle injection.n.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.508-516
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• 1998

Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.335-338
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• 1993

텅스텐으로 만들어진 field emitter와 탄소로 만들어진 field emitter에서 생기는 step이나 spike 형태의 잡음에 대하여 비교 연구하였다. 그리고 dispenser 형태의 field emiter와 array 형태의 field emitter와 같은 새로운 형태의 field emitter를 설명하였다.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.33-35
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• 2008

We have fabricated and evaluated new high efficiency green light emitting phosphorescent devices with an emission layer of $[TCTA_{1/3}TAZ_{2/3}/TAZ]:Ir(ppy)_3$. The whole experimental devices have the basic structure of $2-TNATA(500 {\AA})/NPB(300{\AA})/EML(300{\AA})/BCP(50{\AA})/SFC137(500{\AA})$ between anode and cathode. We have also fabricated conventional phosphorescent devices with emission layers of $(TCTA_{1/3}TAZ_{2/3}):Ir(ppy)_3$ and $(TCTA/TAZ):Ir(ppy)_3$ and compared their electroluminescence characteristics with those of the device with an emission layer of $(TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$. The current density(J), luminance(L), and current efficiency($\eta$) of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ were 95 $mA/cm^2$, 25000 $cd/m^2$, and 27 cd/A at an applied voltage of 10V, respectively. The maximum current efficiency was 52 cd/A under the luminance of 400 $cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 513nm and 65nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de l'Eclairage) chart. Under the luminance of 15000 $cd/m^2$, the current efficiency of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ was 34 cd/A, which has been improved 1.7 times and 1.4 limes compared to those of the devices with emission layers of $(300{\AA}-TCTA_{1/3}TAZ_{2/3}): 10%-Ir(ppy)_3$ and $(100{\AA}-TCTA/200{\AA}-TAZ):10%-Ir(ppy)_3$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.486-490
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• 2011

To investigate the effect of two-emission-layer structure on the emission characteristics of the phosphorescent white organic light-emitting diodes (PHWOLEDs), the PHWOLEDs with two different emission layers, blue EML(29 nm, FIrpic-doped mCP) and red EML(1 nm, Ir(pq)$_2$acac-doped CBP)), following host-guest system were fabricated. The bi-layered blue EML was composed of mCP:FIrpic (20 nm, 7 vol.%) and mCP:FIrpic (9 nm, 7, 10, 15, 20, and 25 vol.%, respectively). When the concentration of FIrpic was increased from 7 to 15 vol.%, light emission luminance, current efficiency, and external quantum efficiency were increased. On the contrary, when the concentration of FIrpic was increased to more than 20 vol.%, light emission luminance, current efficiency, and external quantum efficiency were decreased. The PHWOLEDs with the bi-layered blue EML structure of mCP:FIrpic (20 nm, 7 vol.%) and mCP:FIrpic (9 nm, 15 vol.%) showed current efficiency of 29.7 cd/A and external quantum efficiency (EQE) of 16.6% at 1,000 $cd/cm^2$.