• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.103-106
• /
• 1999

In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34 $\mu$ A. Emission stability was constantly measured for 10 days.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.1
• /
• pp.15-19
• /
• 2001

Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

• Journal of the Korean Vacuum Society
• /
• v.8 no.4A
• /
• pp.410-416
• /
• 1999

It is confirmed that the cause of anode current in SEDs (surface conduction electron emission displays) is the inertial force of electron emitted from the cathode surface in the calculation of electron trajectory. In the fissure of sub-micron, most of electrons emitted from the area of the cathode edge flow into the coplanar anode, while some electrons are emitted into the display surface by the current ratio of $10^{-3}$. The later electrons are forced to fly into the display surface by the centrifugal force due to the curved electric field between top side surfaces near the fissure.

• Progress in Superconductivity and Cryogenics
• /
• v.1 no.2
• /
• pp.8-14
• /
• 1999

In this study, acoustic emission(AE) technique has been applied to detecting quench which is one of the serious peoblems to assure the integrity of superconducting coil at cryogenic temperature. The characteristics of AE parameters have been analyzed by correlating with the number of quenches, whinding tension of superconducting coil and charge rate of transport current. The quench localization was also performed using AE signals and there was also good correlation between quench current and AE parameters such as AE energy and AE events. In this study, it was confirmed that AE signals were mainly due to the conductor motion which caused by premature quenching. It was also found that optimized winding tension at superconducting coil was needed to prevent quench caused by conductor motion.

• Carbon letters
• /
• v.12 no.4
• /
• pp.218-222
• /
• 2011

Well-aligned multi-walled carbon nanotubes (MWCNTs) were successfully synthesized by catalytic chemical vapor deposition using a hydrogen sulfide ($H_2S$) additive onto Al/Fe thin film deposited on Si wafers. Transmission electron microscopy images indicated that the as-grown carbon products were thin MWCNTs with small outer diameters of less than 10 nm. $H_2S$ plays a key role in synthesizing thin MWCNTs with a large inside hollow core. The well-aligned thin MWCNTs showed a low turn-on voltage of about 1.1 V/${\mu}m$ at a current density of 0.1 ${\mu}A/cm^2$ and a high emission current of about 1.0 mA/$cm^2$ at a bias field of 2.3 V/${\mu}m$. We suggest a possible growth mechanism for the well-aligned thin MWCNTs with a large inside hollow core.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.752-755
• /
• 2003

An EMI emission of 42" AC-PDP panel is studied in this paper. First, the EMI emission level is roughly estimated using both simple electric dipole type and magnetic dipole type radiator model. The value of current required for estimation has been obtained from Fourier Transform of the measured current in time domain. Second, we investigate which type of EMI radiation is dominant by FEM calculation of the wave impedance. The result shows that electric dipole type radiation is dominant EMI source.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.134-139
• /
• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.1
• /
• pp.45-48
• /
• 2014

We have investigated the effects of an Ag capping layer on the emission characteristics of transparent organic light-emitting devices with Ca/Ag double-layer cathodes. The thickness of the Ag layer was varied from 10 to 30 nm, whereas the Ca was fixed to be a 10 nm in the Ca/Ag structure. The luminance and current efficiency on the cathode and anode sides are significantly dependent on the Ag thickness. For example, the current efficiency on the anode side increases from 8.4 to 11.7 cd/A, whereas, on the cathode side, it decreases from 3.2 to 0.2 cd/A as the Ag thickness increases from 10 to 30 nm. These changes in emission characteristics were investigated by measuring electroluminescence, transmission, and reflection spectra.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.2
• /
• pp.93-101
• /
• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.12 no.3
• /
• pp.114-128
• /
• 2013

Greenhouse gas emissions have been an important issue in different countries because of their effects on global warming. The government has to organize greenhouse gas reduction measures suitable to regional characteristics by establishing annual implementation plans and comprehensive policies based on the UNFCCC. The transportation sector is one of the major contributors of air pollution; hence increasing need to estimate current and future traffic emissions precisely. Under these circumstances, a number of emission models have been developed recently. However, current methods of estimation cannot carry out effective analyses because it does not reflect vehicle movement characteristics. This study aims to present a new method for calculating road traffic emissions in Goyang city. A travel demand model is utilized to carry out GHG emission estimates according the traffic data (fleet composition, vehicle kilometers travelled, traffic intensity, road type, emission factors and speed). This study evaluates two approaches to estimate the road traffic emissions in Goyang City: Pollution-Emis and the Handbook of Emission Factors for Road Transport (HBEFA v.3.1) which is representative of the "average speed" and the "traffic situation" model types. The evaluation of results shows that the proposed emission estimation method may be a good practice if vigilant implementation of model inputs is observed.