• 제목/요약/키워드: Emission current

검색결과 1,497건 처리시간 0.028초

Field Emission Display의 고진공 실장에 관한 연구 (Study on Vacuum Packaging of Field Emission Display)

  • 이덕중;주병권;장진;오명환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.103-106
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    • 1999
  • In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34 $\mu$ A. Emission stability was constantly measured for 10 days.

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A Technique for Analyzing LSI Failures Using Wafer-level Emission Analysis System

  • Higuchi, Yasuhisa;Kawaguchi, Yasumasa;Sakazume, Tatsumi
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권1호
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    • pp.15-19
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    • 2001
  • Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

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표면전도 전자방출 표시장치의 전자방출 구조해석 (Analysis of electron emission mechanism in surface conduction electron emission displays)

  • 김영삼;김영권;오현주;조대근;길도현;김대일;강준길;강승언;최은하
    • 한국진공학회지
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    • 제8권4A호
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    • pp.410-416
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    • 1999
  • It is confirmed that the cause of anode current in SEDs (surface conduction electron emission displays) is the inertial force of electron emitted from the cathode surface in the calculation of electron trajectory. In the fissure of sub-micron, most of electrons emitted from the area of the cathode edge flow into the coplanar anode, while some electrons are emitted into the display surface by the current ratio of $10^{-3}$. The later electrons are forced to fly into the display surface by the centrifugal force due to the curved electric field between top side surfaces near the fissure.

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권선장력을 고려한 초전도 계자코일의 퀀치특성 및 AE 신호특성에 관한 연구 (A study on Quench Characteristics considering Winding Tension in Superconducting Coil using Acoustic Emission Technique)

  • 이준현;이민래;손명환;권영길
    • 한국초전도ㆍ저온공학회논문지
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    • 제1권2호
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    • pp.8-14
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    • 1999
  • In this study, acoustic emission(AE) technique has been applied to detecting quench which is one of the serious peoblems to assure the integrity of superconducting coil at cryogenic temperature. The characteristics of AE parameters have been analyzed by correlating with the number of quenches, whinding tension of superconducting coil and charge rate of transport current. The quench localization was also performed using AE signals and there was also good correlation between quench current and AE parameters such as AE energy and AE events. In this study, it was confirmed that AE signals were mainly due to the conductor motion which caused by premature quenching. It was also found that optimized winding tension at superconducting coil was needed to prevent quench caused by conductor motion.

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Synthesis of well-aligned thin multiwalled carbon nanotubes on the silicon substrate and their field emission properties

  • Yuan, Huajun;Shin, Dong-Hoon;Kim, Bawl;Lee, Cheol-Jin
    • Carbon letters
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    • 제12권4호
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    • pp.218-222
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    • 2011
  • Well-aligned multi-walled carbon nanotubes (MWCNTs) were successfully synthesized by catalytic chemical vapor deposition using a hydrogen sulfide ($H_2S$) additive onto Al/Fe thin film deposited on Si wafers. Transmission electron microscopy images indicated that the as-grown carbon products were thin MWCNTs with small outer diameters of less than 10 nm. $H_2S$ plays a key role in synthesizing thin MWCNTs with a large inside hollow core. The well-aligned thin MWCNTs showed a low turn-on voltage of about 1.1 V/${\mu}m$ at a current density of 0.1 ${\mu}A/cm^2$ and a high emission current of about 1.0 mA/$cm^2$ at a bias field of 2.3 V/${\mu}m$. We suggest a possible growth mechanism for the well-aligned thin MWCNTs with a large inside hollow core.

A Study of Electromagnetic Emission of 42' AC PDP Module

  • Lim, Hun-Yong;Kim, Min-Seok;Lee, Jeong-Hae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.752-755
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    • 2003
  • An EMI emission of 42" AC-PDP panel is studied in this paper. First, the EMI emission level is roughly estimated using both simple electric dipole type and magnetic dipole type radiator model. The value of current required for estimation has been obtained from Fourier Transform of the measured current in time domain. Second, we investigate which type of EMI radiation is dominant by FEM calculation of the wave impedance. The result shows that electric dipole type radiation is dominant EMI source.

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Field Emission Characteristics a-C:F:N Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition

  • Jae, Chung-Suk;Jung, Han-Eun;Jang Jin
    • 한국진공학회지
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    • 제7권s1호
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    • pp.134-139
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    • 1998
  • Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

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Effect of Ag Capping Layer on the Emission Characteristics of Transparent Organic Light-emitting Devices with Ca/Ag Double-layer Cathodes

  • Lee, Chan-Jae;Moon, Dae-Gyu
    • Transactions on Electrical and Electronic Materials
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    • 제15권1호
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    • pp.45-48
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    • 2014
  • We have investigated the effects of an Ag capping layer on the emission characteristics of transparent organic light-emitting devices with Ca/Ag double-layer cathodes. The thickness of the Ag layer was varied from 10 to 30 nm, whereas the Ca was fixed to be a 10 nm in the Ca/Ag structure. The luminance and current efficiency on the cathode and anode sides are significantly dependent on the Ag thickness. For example, the current efficiency on the anode side increases from 8.4 to 11.7 cd/A, whereas, on the cathode side, it decreases from 3.2 to 0.2 cd/A as the Ag thickness increases from 10 to 30 nm. These changes in emission characteristics were investigated by measuring electroluminescence, transmission, and reflection spectra.

Fabrication and Characteristics of Lateral Type Field Emitter Arrays

  • Lee, Jae-Hoon;Kwon, Ki-Rock;Lee, Myoung-Bok;Hahm, Sung-Ho;Park, Kyu-Man;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권2호
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    • pp.93-101
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    • 2002
  • We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

Development of Greenhouse Gas Estimation Method for a Local Government Level Using Traffic Demand Model

  • ;정현지;이선하;하동익
    • 한국ITS학회 논문지
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    • 제12권3호
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    • pp.114-128
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    • 2013
  • 현재 온실가스 배출량 산정 방법은 온실가스 저감대책 효과 분석이 불가능하며 차량의 이동특성이 반영이 안 된 실정으로 이를 극복할 수 있는 온실가스 배출량 산정 방법의 필요로 본 연구가 시작되었다. 교통수요 분석을 통해 차종, 교통상황에 따른 HBEFA 배출계수로 배출량을 산정하는 방법을 통해 고양시에 적용하여 분석하였다. 본연구의 지자체단위 교통수요 추정방안을 통해 실질적인 교통 이용특성에 맞는 온실가스 배출량이 산출되었다. 온실가스 지자체별 통행요금, 속도제한 등 온실가스 저감 요인들이 교통수요 모형에 반영되어 온실가스 저감 대책에 대한 효과분석 후 환경영향을 줄일 수 있는 방안을 강구하여 온실가스 저감 대책 마련에 효율적으로 이용될 것으로 판단된다.