Analysis of a Novel Elevated Source Drain MOSFET with Reduced Gate-Induced Drain Leakage and High Driving Capability (Gate-Induced Drain Leakage를 줄인 새로운 구조의 고성능 Elevated Source Drain MOSFET에 관한 분석)
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- Journal of the Institute of Electronics Engineers of Korea SD
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- v.38 no.6
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- pp.390-397
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- 2001