• Title/Summary/Keyword: Electronic transitions

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High Resolution Optical Spectroscopy of mer-[Cr(dpt)(Gly-Gly)]ClO₄

  • 최종하
    • Bulletin of the Korean Chemical Society
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    • v.20 no.4
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    • pp.436-440
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    • 1999
  • The highly resolved absorption spectra of mer-[Cr(dpt)(Gly-Gly)]ClO4·H2O [dpt = di(3-aminopropyl)amine, H2Gly-Gly = glycylglycine] have been measured between 13000 cm-1 and 50000 cm-1 temperatures down to 2 K. The vibrational intervals were extracted by recording emission and far-infrared spectra. The characteristic infrared bands in meridional isomer were discussed. The four-teen electronic origins due to spin-allowed and spin-forbidden transitions were assigned. With the use of this electronic transitions, a ligand field optimization based on the exact known ligand geometry have been performed to determine more detailed bonding properties of Gly-Gly and dpt ligands. It is confirmed that the peptide nitrogen of the Gly-Gly has a weak π-donor property toward chrornium(Ⅲ) ion.

A New Low Power LFSR Architecture using a Transition Monitoring Window (천이 감시 윈도우를 이용한 새로운 저전력 LFSR 구조)

  • Kim Youbean;Yang Myung-Hoon;Lee Yong;Park Hyuntae;Kang Sungho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.8 s.338
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    • pp.7-14
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    • 2005
  • This paper presents a new low power BIST TPG scheme. It uses a transition monitoring window (TMW) that is comprised of a transition monitoring window block and a MUX. When random test patterns are generated by an LFSR, transitions of those patterns satisfy pseudo-random gaussian distribution. The Proposed technique represses transitions of patterns using a k-value which is a standard that is obtained from the distribution of U to observe over transitive patterns causing high power dissipation in a scan chain. Experimental results show that the Proposed BIST TPG schemes can reduce scan transition by about $60\%$ without performance loss in ISCAS'89 benchmark circuits that have large number scan inputs.

Mechanistic investigations on emission characteristics from g-C3N4, gC3N4@Pt and g-C3N4@Ag nanostructures using X-ray absorption spectroscopy

  • Sharma, Aditya;Varshney, Mayora;Chae, Keun Hwa;Won, Sung Ok
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1458-1464
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    • 2018
  • An improved method for the preparation of g-$C_3N_4$ is described. Currently, heating (> $400^{\circ}C$) of urea is the common method used for preparing the g-$C_3N_4$. We have found that sonication of melamine in $HNO_3$ solution, followed by washing with anhydrous ethanol, not only reduce the crystallite size of g-$C_3N_4$ but also facilitate intriguing electronic structure and photoluminescence (PL) properties. Moreover, loading of metal (Pt and Ag) nanoparticles, by applying the borohydride reduction method, has resulted in multicolor-emission from g-$C_3N_4$. With the help of PL spectra and local electronic structure study, at C K-edge, N K-edge, Pt L-edge and Ag K-edge by X-ray absorption spectroscopy (XAS), a precise mechanism of tunable luminescence is established. The PL mechanism ascribes the amendments in the transitions, via defect and/or metal states assimilation, between the ${\pi}^*$ states of tris-triazine ring of g-$C_3N_4$ and lone pair states of nitride. It is evidenced that interaction between the C/N 2p and metal 4d/5d orbitals of Ag/Pt has manifested a net detraction in the ${\delta}^*{\rightarrow}LP$ transitions and enhancement in the ${\pi}^*{\rightarrow}LP$ and ${\pi}^*{\rightarrow}{\pi}$ transitions, leading to broad PL spectra from g-$C_3N_4$ organic semiconductor compound.

Co 불순물을 첨가한 HgGa2S2 단결정의 광흡수 특성

  • Kim, N.O.;Kim, H.G.;Kim, B.C.;Min, W.K.;Jeon, H.S.;Shin, S.D.;Bang, T.W.
    • Proceedings of the KIEE Conference
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    • 2004.07e
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    • pp.55-57
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    • 2004
  • $HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

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Study on the Fringe Field Switching (FFS) Mode with the Positive Dielectric Anisotropy for the Fast Response Time (유전율 이방성이 양인 액정을 이용한 고속응답용 FFS 모드)

  • 김미숙;김향율;송성훈;양석만;이성규;임영진;이승희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.754-759
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    • 2004
  • We have studied the fringe field switching (FFS) mode with the positive dielectric anisotropy for the fast response time. The factors such as the physical properties of the LC, the cell gap, and the rubbing angle were critical for the fast response time of the FFS mode. The response time became 10 ms faster when the rotational viscosity of the new LC is 20 mPa.s lower than the conventional LC. When the cell gap changed from 3.6 ${\mu}{\textrm}{m}$ to 3.0 ${\mu}{\textrm}{m}$, it was possible to achieve the total response time and response times associated with grey-to-grey transitions under 16 ms. And the response times including grey-to-grey transitions become fast as the rubbing angle decreases.

The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films

  • Yang, Sung-Jun;Lee, Jae-Min;Shin, Kyung;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.185-188
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    • 2004
  • Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.

Magneto-optical Measurements of Semiconductor Quantum Structures in Pulsed-magnetic Fields

  • Kim, Yongmin
    • Applied Science and Convergence Technology
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    • v.23 no.1
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    • pp.1-13
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    • 2014
  • Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.

Spectroscopic Properties and Ligand Field Analysis of Tris[($\pm$)-trans-1,2-cyclohexanediamine]chromium(Ⅲ) Chloride$^1$

  • Jong-Ha Choi
    • Bulletin of the Korean Chemical Society
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    • v.15 no.2
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    • pp.145-150
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    • 1994
  • The low temperature luminescence and excitation, room-temperature UV-visible and infrared spectra of [Cr(${\pm})chxn_3]Cl_3$ (chxn=trans-1,2-cyclohexanediamine) have been measured. It is found that the zero-phonon line in the excitation spectrum splits into two components by $47\;cm^{-1}$. The eight electronic transitions due to spin-allowed and spin-forbidden are assigned. As expected, nitrogen atoms of chxn ligand have strong ${\sigma}-donor $properties toward chromium(Ⅲ). The positions and splittings of sharp-line transitions are analyzed as a function of the Cartesian bite (${\alpha}$) and twist (${\beta}$) angles to predict the metal-ligand geometry.

Characterizing Motion Performance with the Simulation Method

  • Li, Xiaohua;Teunissen, Kees;Song, Wen;Zhang, Yuning;Chai, Lin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1573-1576
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    • 2008
  • A simulation system is developed to calculate the apparent motion-induced image from a sequence of temporal luminance transitions, while using the properties of the human visual system. Based on the simulation method, both edge (moving block) and detail degradation (line spreading, grating, sinusoidal pattern), and also color aberration are discussed.

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SI(superconductor-insulator) Transitions in Bi-superconducting Mixed Crystal Thin Films

  • Park, No-Bong;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.486-489
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    • 2002
  • Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

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