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http://dx.doi.org/10.4313/TEEM.2004.5.5.185

The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films  

Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University)
Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University)
Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University)
Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Transactions on Electrical and Electronic Materials / v.5, no.5, 2004 , pp. 185-188 More about this Journal
Abstract
Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.
Keywords
AsSbTe; GeSbTe; Phase-change; Nonvolatile memory; Chalcogenide;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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