• Journal of the Korean Society of Food Science and Nutrition
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• v.40 no.9
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• pp.1307-1313
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• 2011

This study was conducted to evaluate the effects of irradiation temperature on the physicochemical and sensory properties of Tarakjuk, milk porridge. Tarakjuk was gamma-irradiated at different temperatures of $25^{\circ}C$ (in room), $4^{\circ}C$ (in ice), and $-20^{\circ}C$ (in dry ice) at a dose of 10 kGy, and then autoclaved at $120^{\circ}C$ for 15 min for comparison. pH and Hunter's color value of Tarakjuk were not changed by irradiation regardless of the temperature. However, the TBA (2-thiobarbituric acid) value decreased as irradiation temperature was decreased. The viscosity of Tarakjuk irradiated in dry ice was significantly higher than that irradiated at room temperature and in ice (p<0.05). For the sensory evaluation, there were no significant differences in overall acceptability between non-treated Tarakjuk and that irradiated in dry ice. Flavor pattern analysis using an electronic nose with a SAW (surface acoustic wave) sensor determined that the main peaks at retention times 3.88 and 7.34 sec were related with off-flavor induced by irradiation and unique flavor of Tarakjuk, respectively. These results indicated that irradiation at freezing temperature improved quality deterioration of Tarakjuk by gamma irradiation. However, sensory quality of Tarakjuk irradiated at freezing temperature was still lower than that of non-irradiated Tarakjuk. Therefore, further research is needed to improve the quality of Tarakjuk using combined treatment such as addition of antioxidants and vacuum packaging method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.130-134
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• 2018

In the past few years, various solder compositions have been a representative material to electronic packages and surface mount technology industries as a replacement of Pb-base solder alloy. Therefore, extensive studies on process and/or reliability related with the low Ag composition have been reported because of recent rapid rise in Ag price. In this study, Sn-3.0Ag-0.5Cu, Sn-0.7Cu and Sn-0.3Ag-0.5Cu solder bar samples were fabricated by melting of Sn, Ag and Cu metal powders. Crystal structure and element concentration were analyzed by XRD, XRF, optical microscope, FE-SEM and EDS. The fabricated solder samples were composed of ${\beta}-Sn$, ${\varepsilon}-Ag_3Sn$ and ${\eta}-Cu_6Sn_5$ phases.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.85-92
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• 2015

The 50 mole% HCl doped polyaniline(PAni) was synthesized by polymerization of aniline in the presence of hydrochloric acid and ammonium persulfate(APS) as dopant and oxidant, respectively. Then, conducting biodegradable cellulose acetate composite films were also prepared with PAni in acetone to find their applicability to antistatic packaging materials. The tensile strength of PCA05 film with 5 wt% of PAni was decreased by 27% from $377.1kg_f/cm^2$ for CA film itself to $275.2kg_f/cm^2$. Elongation was also decreased from 7.65% to 4.35%. Surface registance of $7.0{\times}10^9{\Omega}/sq$ could be achieved for the PCA containing 5 wt% of PAni. Therefore, this PCA05 film can be applied to antistatic package film for electronic board. In addition, decomposition temperature of these PCA films obtained by thermogravimetric analysis(TGA) was decreased with the amount of PAni in PCA films, and the final weight of char was directly proportional to PAni contents. From this thermal result we can calculate the content of PAni in unknown PCA films.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.1
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• pp.116-121
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• 2009

Thermosonic flip chip bonding is an important technology for the electronic packaging due to its simplicity, cost effectiveness and clean and dry process. Mechanical properties of the horn and the shank, such as the natural frequency and the amplitude, have a great effect on the bonding capability of the transverse flip chip bonding system. In this research, two kinds of study are performed. The first is the new design of the clamp and the second is the effect of tolerance parameters to the performance of the system. The clamp with a bent shape is newly designed to hold the nodal point of the flip chip. The second is the effect of the design parameters on the vibration amplitude and planarity at the end of the shank. The variation of the tolerance parameters changes the amplitude and the frequency of the vibration of the shank. They, in turn, have an effect on the quantity of the plastic deformation of the gold ball bump, which determined the quality of the flip chip bonding. The tolerance parameters that give the great effect on the amplitude of the shank are determined using Taguchi's method. Error of set-up angle, the length and diameter of horn and error of the length of the shank are determined to be the parameters that have peat effect on the amplitude of the system.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.1-10
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• 2018

Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.49-55
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• 2011

The failure of electronic instruments is mostly caused by heat and shock. This shock causes the crack initiation at the solder joint interface of PCB component which is closely related with the formation of intermetallic compound(IMC). The Ag content in Pb-free Sn-xAg-0.5Cu solder alloy used in this study was 1.0, 1.2 and 3.0 wt.%, respectively. After soldering with PCB component, isothermal aging was performed to 1000 hrs. The growth of IMC layer was observed during isothermal aging. The drop impact property of solder joint was evaluated by impact bending test method. The solder joint made with the solder containing lower Ag content showed better impact bending property compared with that with higher Ag content. On the contrary to this result, the solder joint made with solder containing higher Ag content showed better impact bending property after aging. It should be caused by the formation of fine $Ag_3Sn$, which relieved the impact. It showed consequently the different effect of fine $Ag_3Sn$ and coarse $Cu_6Sn_5$ particles formed in the IMC layer on the impact bending property.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.55-59
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• 2018

In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.11-17
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• 2009

The drop impact reliability comes to be important for evaluation of the life time of mobile electronic products such as cellular phone. The drop impact reliability of solder joint is generally affected by the kinds of pad and reflow number, therefore, the reliability evaluation is needed. Drop impact test proposed by JEDEC has been used as a standard method, however, which requires high cost and long time. The drop impact reliability can be indirectly evaluated by using high speed shear test of solder joints. Solder joints formed on 3 kinds of surface finishes OSP (Organic Solderability Preservation), ENIG (Electroless Nickel Immersion Gold) and ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold) was investigated. The shear strength was analysed with the morphology change of intermetallic compound (IMC) layer according to reflow number. The layer thickness of IMC was increased with the increase of reflow number, which resulted in the decrease of the high speed shear strength and impact energy. The order of the high speed shear strength and impact energy was ENEPIG > ENIG > OSP after the 1st reflow, and ENEPIG > OSP > ENIG after 8th reflow.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.1
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• pp.9-15
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• 2019

Here, we present a facile route to fabricate a vertically stacked 3D porous structure-based triboelectric nanogenerator (TENG) that can be used to harvest energy from the friction in a repetitive contact-separation mode. The unit component of TENG consists of thin Al foil electrodes integrated with microstructured 3D foams such as Ni, Cu, and polyurethane (PU), which provide advantageous tribo-surfaces specifically to increase the friction area to the elastomeric counter contact surfaces (i.e., polydimethylsiloxane, PDMS). The periodic contact/separation-induced triboelectric power generation from a single unit of the 3D porous structure-based TENG was up to $0.74mW/m^2$ under a mild condition. To demonstrate the potential applications of our approach, we applied our TENGs to small-scale devices, operating 48 LEDs and capacitors. We envision that this energy harvesting technology can be expanded to the applications of sustainably operating portable electronic devices in a simple and cost-effective manner by effectively harvesting wasted energy resources from the environment.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1320-1327
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• 2013

In this paper, two different electromagnetic energy harvesters using bulk micromachined silicon spiral springs and Polydimethylsiloxane (PDMS) packaging technique have been fabricated, characterized, and compared to generate electrical energy from ultra-low ambient vibrations under 0.3g. The proposed energy harvesters were comprised of a highly miniaturized Neodymium Iron Boron (NdFeB) magnet, silicon spiral spring, multi-turned copper coil, and PDMS housing in order to improve the electrical output powers and reduce their sizes/volumes. When an external vibration moves directly the magnet mounted as a seismic mass at the center of the spiral spring, the mechanical energy of the moving mass is transformed to electrical energy through the 183 turns of solenoid copper coils. The silicon spiral springs were applied to generate high electrical output power by maximizing the deflection of the movable mass at the low level vibrations. The fabricated energy harvesters using these two different spiral springs exhibited the resonant frequencies of 36Hz and 63Hz and the optimal load resistances of $99{\Omega}$ and $55{\Omega}$, respectively. In particular, the energy harvester using the spiral spring with two links exhibited much better linearity characteristics than the one with four links. It generated $29.02{\mu}W$ of output power and 107.3mV of load voltage at the vibration acceleration of 0.3g. It also exhibited power density and normalized power density of $48.37{\mu}W{\cdot}cm-3$ and $537.41{\mu}W{\cdot}cm-3{\cdot}g-2$, respectively. The total volume of the fabricated energy harvesters was $1cm{\times}1cm{\times}0.6cm$ (height).