• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.949-953
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• 2004

In automobile, the introduction of electronically commutated motors has been accompanied by a proliferation of electronic devices. With this proliferation of electronic devices, an emphasis has been placed on EMC issues. This paper is proposed to use SRM as a radiator cooling fan in automotive applications. To drive SRM, Energy efficient C-dump converter is applied. It is verified more efficient than other converters through simulation and experiments. And also SRM is valid automotive applications that have strict EMC standards. It is compared SRM with BLDC and DC motor by experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.927-930
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• 2001

We studied the electrical properties of Copper(II)-phthalocyanine (Cu-Pc) as a hole transport layer in organic light emitting devices (OLEDs). OLEDs were constructed with ITO/CU-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum ( Alq$_3$) + 4- (Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/Al. It was consisted of a thin DCM in Alq$_3$emission layer. We observed that the change of recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of Cu-Pc layer increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.943-946
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• 2001

In this study, We have investigated degradation effects of blue organic electroluminescence devices that was consisted of TPD(N,N'-dyphenyl-N-N\`-bis(3-methyphenyl) as hole transport layer and Butyl-PBD (2- (4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole)-as emission layer and electron transport layer. We have studied characteristics of brightness and current density about blue OEL that was degradated layer. Two kinds of samples that were fabricated each continuous and non-continuous method was used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.157-160
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• 2001

Three sets of ZnO ceramic devices (reference samples with Matsuoka\`s composition; added 7o MgO, A1$_2$O$_3$, SiO$_2$) have been prepared by the conventional mixed oxide route. These additives were determined by the factors of valences and ionic radiuses. DC accelerated degradation test was performed for analysis of degradation characteristics versus the various additives. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the Phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine ${\alpha}$. Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.299-302
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of multicolor emission low operation voltage. In this study, several Eu complexes such as Eu(TPB)$_3$(Phen) and Eu(TPB)$_3$(Bpy) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of glass substrate/ITO/TPD/Europium-complexs/Alq$_3$/Al, where aromatic diamine(TPD) was used as an hole transporting and Alq$_3$ was used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these Europium complexes were dependent upon the ligands coordinated to Europium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.44-47
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• 1991

Electron injection and memory retention chracteristics of the MNOS devices with thin oxide layer of 23${\AA}$ thick and silicon nitride layer of 1000${\AA}$ thick which are fabricated for this experiment. As a result, pulse amplitude increase oxide current is dominated in linearly increasing region of $\Delta$V$\_$FB/the decreasing region after saturation was due to the increased silicon nirtide current. In low pulse ampiltude $\Delta$V$\_$FB/ is not variated on temperature, but as temperature and pulse amplitude increase. $\Delta$V$\_$FB/ is decreased after saturation. And the decay rate during 10$^4$sec after electron injection was ohiefly dominated by the back tunneling of emission from memory trap to silicon. Memory retention characteristics in V$\_$FB/ stage was better than that of OV retention regardless of injection conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.29-32
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• 1991

Non-volatile SNOSFET memory devices using CMOS 1Mbit design rule(1.2$\mu\textrm{m}$), whose channel width and length are 15${\times}$1.5$\mu\textrm{m}$, 15${\times}$1.5$\mu\textrm{m}$, 2.0${\times}$15$\mu\textrm{m}$ and length are 15${\times}$1.7$\mu\textrm{m}$, respectivley, were fabricated. And the transfer, Id-Vd and switching characteristics of the devices were investigated. As a result, the 15${\times}$1.5$\mu\textrm{m}$ device was good in the transfer characteristics and the switching characteristics were favourable, which had $\Delta$V$\sub$TH/=6.3V by appling pulse voltage of V$\sub$w/=+34V, Tw=50msec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.427-430
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• 2001

The degradation characteristics versus MgO Additive for the ZnO ceramic devices fabricated by the standard ceramic techniques is investigated in this study. It were made these devices be basic Matsuoka's composition. Especially, MgO were added to analyze the degradation characteristics and sintered in air at 1300$^{\circ}C$. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. The elemental analysis in the microstructures was used by EDS, E-J analysis was used to determine ${\alpha}$ . Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.