• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1049-1055
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• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.853-858
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• 2008

The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.6
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• pp.506-511
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• 2017

LED lighting, which many companies are pursuing commercialization, is a representative green energy technology. However, the LED lighting for broadcasting image should have high output and easy portability compared with general LED lighting devices for street lamps, advertisement or transportation devices. Therefore, while shooting a broadcast image if you use LEDs as a substitute light source for halogen lamps and fluorescent lamps that are large in size and uncomfortable to handle it is expected that the lightening of the equipment will activate the broadcasting image lighting equipment industry. After considering the mass production of the LED module board and the SMT production size of the chip mounter, the board size was determined considering the overall size of the product by model. In this paper, four 20W LED boards are arranged vertically in order to produce an 80W board. In other words, by sharing LED module board size by model, high power LED lighting equipments of 120W and 200W can be selected as an increase in the number of boards.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2006.06b
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• pp.241-246
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• 2006

This paper describes two kinds of personal hand-held electronic devices to support marine leisure safety. The one is Radar response-type safety device triggering by the pulse signal from a commercial 9GHz-band Radar to provide quick search and rescue with combined civilian-government-military fleets. The other one is M-RFID (Marine Radio Frequency IDentification) based safety electronic device using 900MHz Tx/Rx with spread spectrum frequency hopping and GPS. Through the field tests at sea using Korea Coast Guard's warship the operating performances are verified. Further plan for practical use of each device was also discussed.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2009.06a
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• pp.183-184
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• 2009

In this paper the internal or external of the ships mounted electronic devices due to the propagation of electromagnetic interference and to prevent malfunction EMC filter was designed and fabricated. It was designed and fabricated with Ni-Zn ferrite beads of high permeability to make large inductance as the inductor and Feed-through capacitors, which did not have any resonance point, to restraint resonance effectively, and the characteristics was evaluated. The results from the 0 kHz$\sim$1.5 GHz bandwidth of $25{\sim}70$ dB were able to obtain excellent attenuation characteristics. And, when the Electric Fast Transient (EFT) of 4 kV in the level 4 of IEC 61000-4-4 was induced, it was soon attenuated more than 1/6 to 600 V. Therefore, it was confirmed that the developed EMC filter can be used for suppressing ships mounted electromagnetic interference between electronic devices.

• Restorative Dentistry and Endodontics
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• v.7 no.1
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• pp.25-31
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• 1981

One of the most important factors for successful endodontic therapy is an accurate length determination of physiological root apex. Some methods suggested for the measurement of root canal length, include digital-tactile sense and roentgenographic technique with measuring wire, scale and grid. But these methods do not derermine an accurate working length to physiological root apex. Recently electronic measuring devices are used to locate the physiological root apex in root canal length determination and these devices are accepted as an effective apparatus. The 89 patients (116 teeth, 144 canals) among the out-patients of Yonsei University Dental Infirmary, who had had an endodontic treatment in the Department of Operative Dentistry, were measured by the Root-Canal Meter$^{(R)}$ as an electronic device, and radiographs to determine the distribution and location of physiological root apex, then the following results were made: (1) Range of ${\pm}$1mm from the radiographic root apex were present in 88.88% (128 canals) of the subjects. (2) Physiological root apex and radiographic root apex were coincided in 31.94% (46 canals) of the subjects. (3) The actual length of the physiological root apex of the teeth were as follow; A : in the maxillary central incisor : 0.46mm B : in the maxillary lateral incisor : 0.44mm C : in the maxillary canine : 0.44mm D : in the maxillary 1st premolar : a) Buccal : 0.59mm b) Lingual : 0.34mm E : in the maxillary 2nd premolar : 0.54mm F : in the maxillary 1st molar : a) Mesio-buccal : 0.50mm b) Disto-buccal : 0.42mm c) Lingual : 0.56mm G : in the mandibular central incisor : 0.62mm H : in the mandibular lateral incisor : 0.45mm in the mandibular canine : 0.54mm J : in the mandibular 1st premolar : 0.47mm K : in the mandibular 2nd premolar : 0.34mm L : in the mandibular 1st molar : a) Mesio-buccal : 0.54mm b) Mesio-lingual : 0.31mm c) Distal : 0.37mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1197-1199
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• 1993

The molecular electronic devices of organic materials are of current interest. Langmuir-Blodgett(LB) method is the most possible candidate for the development of the molecular electronic devices. One of the critical problems for applications of the LB films to the commercial products will be an electrical conductivity within a LB film. We studied the monolayer characteristics and electrical conductivity of the 1:1 mixture LB films of N-docosylquinolium-TCNQ and $TCNQ^0$. There were some differences in the $\pi-A$ isotherm and UV-visible absorption spectrum of N-docosylquinolium-TCNQ and 1:1 mixture. The small critical area of the $\pi-A$ isotherm for 1:1 mixture may result from the bilayer formation. We confirmed the incorporation of the $TCNQ^0$ with the N-docosylquinolium-TCNQ from the UV-visible absorption spectrum. But the electrical conductivity measured was $10^{-7}$ S/cm for the 1:1 mixture film layered at the surface pressure of 35 mN/m. We couldn't gain any electrical conductivity by mixing the $TCNQ^0$ into the N-docosylquinolium-TCNQ layer. We supposed that $TCNQ^0$ mixed in was not packed parallel to the TCNQ anion radical faces.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.