• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.143-146
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• 2000

We studied effects of alkyl($C_nH_{2n+1}$) chain length on characteristics of poly(3-alkylthiophene) electroluminescent diodes. Among the poly(3-alkylthiophene), poly(3-hexylthiophene)(n=6) and poly(3- octyIthiophene)(n=8) were mainly used for the emitting layer of the diode. The result of experiment, the emission intensity of poly(3-alkylthiophene) electroluminescent diodes depends on the alkyl chain length. Strong emission is obtained from a poly(3-alkylthiophene) diodes of long alkyl side chain length. Emission intensities are enhanced by a confinement of carriers on a main chain with a long interchain distance caused by a long alkyl side chain.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.19-19
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• 2003

The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.5
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• pp.1011-1016
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• 2012

By the recent development of the mobile communication, the mobile devices like smart phones and tablet PCs, become extremely popular and the diverse augmented reality are embodied using them. In this paper, a 3D ship display system using mobile augmented reality was designed, and the drawing matching algorithm was embodied. And also, it is intended to provide the help to the active attraction of the shipbuilding orders.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.4
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• pp.475-482
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• 2014

In this paper, we have implemented mobile based smart greenhouse system that can grasp and control the situation for greenhouse from distance. Using existing web based greenhouse system is controlled in real time, but it has a drawback used in limited place. To solve this problem, we have emphasized usability of smart greenhouse system by using mobile device. By using mobile devices (smartphones - the Android based) software we have to raise the comfort and productivity for grasping and controling the situation for greenhouse from distance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.417-427
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• 2014

Renewable energy sources such as solar, wind and hydro provides utilizing renewable power and reduce the using fossil fuels. On the other hand, it is too critical to apply power system due to the intermittent nature of renewable energy sources, the continuous fluctuations of the power load, and the storage with high energy density. Energy storage system, including pumped-hydroelectric energy storage, compressed-air energy storage, superconducting magnetic energy storage, and electrochemical devices like batteries, supercapacitors and others have shown that solve some of the challenges. In this paper, we review the current state of applications of energy storage systems, and atomic layer deposition technology, graphene materials on the energy storage systems and processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.389-393
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• 2014

A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Si substrate. The (111) N-type Si wafers with one-side polished, 450~500 ${\mu}m$ and resistivity $1{\sim}20{\Omega}{\cdot}cm$ were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design would provide an effective scheme for high-performing photoelectric devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.551-554
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• 2014

This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.263-267
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• 2013

New random copolymers of phenylsilyl- and alkoxy-substituted phenylenevinylene, DMPS(9)-MEH(1)-PPV, DMPS(5)- MEH(5)-PPV and DMPS(1)-MEH(9)-PPV, have been synthesized by the Gilch dehydrohalogenation route, and the light-emitting properties of these polymers have been studied. The synthesized polymers were completely soluble in common organic solvents, and exhibited good thermal stability, almost up to $380^{\circ}C$. They showed UV-visible absorbance and photoluminescence (PL) in the ranges of 422-510 and 513-590 nm, respectively, according to their feed ratios. Electroluminescent devices were fabricated with these polymers as emitting layers, and ITO and Al as anode and cathode, respectively. DMPS(1)-MEH(9)-PPV, DMPS(5)-MEH(5)-PPV and DMPS(9)-MEH(1)-PPV exhibited EL emission maxima at 575 nm, 565 nm, and 541 nm, respectively.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.716-717
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• 2011

This paper presents the overview of development of substation automation system. The prototypes of SA system are developed in first phase, and being enhanced the performance in second phase. In this research, the project was classified into three projects which are the development of intelligent electronic devices, the development of operation system and communication network in substation, and the development of technology to verify the compatibility of IEC 61850. As a result of this research, the domestic-made SA system are operated and tested for the performance in 154kV substation and/or test-bed in KEPCO PT Center.