• Title/Summary/Keyword: Electronic devices

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Performance test of an electronic instrument transformer mounted an error compensating method for instrument transformer (변성기의 오차 보상 방법이 탑재된 전자식 변성기의 성능 평가)

  • Kang, Yong-Cheol;Park, Jong-Min;Jang, Sung-Il;Yun, Jae-Sung;Kim, Yong-Gyun;Lee, Byung-Sung;Song, Il-Keun
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.760-761
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    • 2007
  • Instrument transformers provide the reproduction of the primary current or voltage to the measuring and protecting devices. The errors of an iron-cored transformer are caused by the difference between the primary and secondary currents due to the hysteresis characteristics of the iron-core. An error compensating algorithm for instrument transformer can improve the accuracy of conventional current and voltage transformers. This paper describes the performances of the electronic current and voltage transformers mounted an error compensating algorithm. The test results of the electronic transformers in Korea Electrotechnology Research Institute(KERI) are presented.

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A Study On The Control Techniques Of Electra-Static Discharges Using Semiconductor Circuits (반도체 회로를 이용한 정전기제거에 관한 연구)

  • Oh, H.J.;Park, K.J.;Kim, B.I.;Kim, N.O.;kim, H.G.;Kim, D.T.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.19-24
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    • 2002
  • Static electricity is an everyday phenomenon. There can be few of us who have not experienced a static shock after sliding across a car seat. Other static nuisance effects include the cling of some fabrics to the body, the sticking of a plastic document cover, or the attraction of dust to a TV or computer screen. However, static electricity has been a serious industrial problem. The age of electronics brought with it new problems associated with static electricity and electrostatic discharge. And, as electronic devices became faster and smaller, their sensitivity to ESD increased. In this work, We are study on the control technique of electo-static discharges using semiconductor circuits. Our circuits are prevented well to electrostatic shock or damages from triboelectric charging in cars everyday life.

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Application of FBG Sensors to the Monitoring of High Speed Trains (고속철도차량 모니터링을 위한 FBG 센서의 응용)

  • Eun, Jong-Pil;Choi, Sung-Hoon;Park, Choon-Soo;Kang, Dong-Hoon;Song, Sung-Jin;Kim, Ki-Hwan
    • Proceedings of the KSR Conference
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    • 2008.11b
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    • pp.544-548
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    • 2008
  • Typically electronic resistance type sensors have been used for measurement system of high-speed trains. But due to a large number of measurement quantities, we had difficulties in installing and maintaining the cables that connect sensors and measuring devices. Furthermore, signals obtained from the electronic resistance type sensors are often distorted because the sensors and cables are vulnerable to electro-magnetic interference (EMI). In this paper the characteristic of FBG sensors are compared with those of electronic resistance type sensors in application for the measurement system of high-speed trains. FBG sensors have advantages because of their multiplexing characteristic and robustness to EMI environment.

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The Electronic Structures and Magnetism of Monolayer Fe on CuGaSe2(001)

  • Jin, Ying-Jiu;Lee, Jae-Il
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.59-63
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    • 2007
  • Ferromagnet/Semiconductor heterostructures have attracted much attention because of their potential applications in spintronic devices. We investigated the electronic structures and magnetism of monolayer Fe on $CuGaSe_2(001)$ by using the all-electron full-potential linearized augmented plane-wave method within a generalized gradient approximation. We considered the monolayer Fe deposited on both the CuGa atoms terminated (CuGa-Term) and the Se atom terminated (Se-Term) surfaces of $CuGaSe_2(001)$. The calculated magnetic moment of the Fe atom on the CuGa-Term was about $2.90\;{{\mu}_B}$. Those of the Fe atoms on the Se-Term were in the range of $2.85-2.98\;{{\mu}_B}$. The different magnetic behaviors of the Fe atoms on two different surfaces were discussed using the calculated layer-projected density of states.

Hierarchical fault propagation of command and control system

  • Zhang, Tingyu;Huang, Hong-Zhong;Li, Yifan;Huang, Sizhe;Li, Yahua
    • Smart Structures and Systems
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    • v.29 no.6
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    • pp.791-797
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    • 2022
  • A complex system is comprised of numerous entities containing physical components, devices and hardware, events or phenomena, and subsystems, there are intricate interactions among these entities. To reasonably identify the critical fault propagation paths, a system fault propagation model is essential based on the system failure mechanism and failure data. To establish an appropriate mathematical model for the complex system, these entities and their complicated relations must be represented objectively and reasonably based on the structure. Taking a command and control system as an example, this paper proposes a hierarchical fault propagation analysis method, analyzes and determines the edge betweenness ranking model and the importance degree of each sub-system.

A novel MobileNet with selective depth multiplier to compromise complexity and accuracy

  • Chan Yung Kim;Kwi Seob Um;Seo Weon Heo
    • ETRI Journal
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    • v.45 no.4
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    • pp.666-677
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    • 2023
  • In the last few years, convolutional neural networks (CNNs) have demonstrated good performance while solving various computer vision problems. However, since CNNs exhibit high computational complexity, signal processing is performed on the server side. To reduce the computational complexity of CNNs for edge computing, a lightweight algorithm, such as a MobileNet, is proposed. Although MobileNet is lighter than other CNN models, it commonly achieves lower classification accuracy. Hence, to find a balance between complexity and accuracy, additional hyperparameters for adjusting the size of the model have recently been proposed. However, significantly increasing the number of parameters makes models dense and unsuitable for devices with limited computational resources. In this study, we propose a novel MobileNet architecture, in which the number of parameters is adaptively increased according to the importance of feature maps. We show that our proposed network achieves better classification accuracy with fewer parameters than the conventional MobileNet.

Fabrication and Characterization of Single-Layer Non-Volatile Memory Devices Using Atomic Layer Deposition (ALD) (ALD 를 활용한 단일 박막 비휘발성 메모리 소자의 제작 및 특성 분석)

  • Hyoung-Wan Lim;Dong-Min Shin;Jun-Su Park;Hyeong-Keun Hong;Jae-Wook Jeon
    • Annual Conference of KIPS
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    • 2024.05a
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    • pp.25-26
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    • 2024
  • 본 연구에서는 ALD(Atomic Layer Deposition) 기술을 사용하여 고품질의 단일 박막을 형성하고, 이를 이용해 비휘발성 메모리 소자를 제작하며 그 특성을 분석한다. ALD 과정에서 단원자층을 차례로 증착하는 방식을 사용하여, 산화알루미늄 및 하프늄 옥사이드를 포함한 여러 층을 성공적으로 증착하였다. 이를 통해 높은 품질과 신뢰성을 가진 박막을 얻을 수 있었으며, 최종적으로 제작된 메모리 소자의 특성을 CV 곡선 분석을 통해 평가한다.

The Implementation Directions and an Analysis of Assistive Devices and Alternative Formats to Improve Accessibility for Disabled People (장애인 접근성 향상을 위한 보조기기 및 대체자료 분석과 구현 방향)

  • Rim, Myunghwan;Gil, Younhee;Jeon, Gwangil
    • The Journal of the Korea Contents Association
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    • v.15 no.7
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    • pp.664-673
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    • 2015
  • The assistive devices for disabled people are being highlighted even in industrial aspects through the policy and support for disabled people, enactment of regulation for the improvement of accessibility of disabled, technological innovation and product development. Recently, internet access with the sense of touch and hearing and utilizing electronic publishing contents and e-mailing are being convenient through the product of ICT development such as screen reader for visually impaired people, braille display, screen enlarger, text converter and others. Even so, in rapidly changing digital media smart era, the accessibility of visually impaired people is still poor and assistive devices and alternative formats are in need of improvement. Therefore, in aspect of the research and development innovation, this study proposes the implementation directions for improvement of accessibility by analyzing the current situation and structure of alternative formats and assistive devices for visually impaired people. As a result, in the future, various types of digital information are expected to be converted into a customized and realistic forms and distributed through a dedicated disability products or smart devices.

Transparent Nano-floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) Pyrochlore Thin Films

  • Jeong, Hyeon-Jun;Song, Hyeon-A;Yang, Seung-Dong;Lee, Ga-Won;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.1-20.1
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    • 2011
  • The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

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Effects of post-annealing temperature of CeO$_2$ buffer layers on the surface morphology, structures and microwave properties of YBa$_2$Cu$_3$O$_{7-{\delta}}$ films on sapphire

  • Yang, W.I.;Lee, J.H.;Ryu, J.S.;Ko, Y.B.;Chung, Y.S.;Hur, Jung;Lee, Sang-Young
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.201-206
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    • 2000
  • Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

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