• Title/Summary/Keyword: Electronic devices

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Electrical and transport properties of carbon chains encapsulated within CNT

  • KIM, Tae Hyung;KIM, Hu Sung;KIM, Yong-Hoon
    • Proceeding of EDISON Challenge
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    • 2017.03a
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    • pp.457-462
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    • 2017
  • A linear carbon chain with pure sp hybridization has been intensively studied for the application of its intrinsic electrical properties to electronic devices. Owing to the high chemical reactivity derived from its unsaturated bond, encapsulation by carbon nanotubes (CNT) is provided as a promising method to stabilize the geometry of the linear carbon chain. Although the influence of CNT on the carbon chain has extensively been studied in terms of both electronic structure and geometries, the electron transport properties has not been discussed yet. In this regard, we provide the systematic atomic-scale analyses of the properties of the linear carbon chain within CNT based on a computational approach combining density-functional theory (DFT) and matrix green function (MGF) method. Based on the DFT calculations, the influence of CNT on electronic structures of the linear carbon chain is provided as well as its electrical origin. Via MGF calculations, we also identify the electron transport properties of the carbon chain - CNT complex.

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The Development of the Buck Type Electronic Dimming Ballast for 250W MHL

  • Jung, Dong-Youl;Park, Chong-Yeon
    • Journal of Electrical Engineering and Technology
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    • v.1 no.4
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    • pp.496-502
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    • 2006
  • In this paper, we studied the development of the electronic ballast for 250W MH (Metal-Halide) lamps. We were able to improve the input power factor by using a PFC IC. To provide the lamp with the rated voltage required, we used the buck-type dc-dc converter. The stress of the switching devices in the inverter could be reduced by this method. To eliminate the acoustic resonance phenomena of MH lamps, the voltage of the lamp added the high frequency sine-wave to the low frequency square-wave by using the full bridge typed inverter. We have developed a simple igniter using the L and C elements. We could control the dimness of the lamp by varying the output voltage of the buck converter. The buck converter output voltage could be controlled by using a microprocessor.

A study on the growth and characterization of $\alpha$ -Sexithienyl thin films by OMBD(Organic Molecular Beam Deposition) technique (유기 분자빔 성막법을 이용한 $\alpha$-Sexithieny1 박막의 성장 및 특성 연구)

  • 박용인;박주강;권오관;김영관;최종선;신동병;손병청;강도열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.187-190
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    • 1996
  • Conducting polymers have band structures similar to those of inorganic semiconductors such as silicon. Several electronic devices have been constructed with conjugated polymers, mainly Schottky diodes and Metal-Insulator-Semiconductor Field-Effect Transistors (MISFET's). Organic semiconductor has been reported as active materials in MISFET's.$^{1.4}$ In our laboratory, $\alpha$-Sexithiencyl ($\alpha$-6T) has been synthesized and purified by sublimation method. In this study, thin films of $\alpha$-Sexithienyl were prepared on various substrates in ultra-high vacuum chamber by vacuum evaporation method, so called OMBD(Organic Molocular Beam Deposition).$^{7.9}$ The $\alpha$-Sexithienyl thin films were deposited with various deposition conditions. The crystalline structure, and molecular orientation of these films have being studied by using UV/Vis. spectroscopy and X-Ray Diffractometry.

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Electrical and Memory Switching Characteristics of Amorphous Thin-Film $As_{10}Ge_{15}Te_{75}$ Thin-Film (비정질 $As_{10}Ge_{15}Te_{75}$ 박막의 전기적 및 메모리 스위칭 특성)

  • 이병석;이현용;정흥배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.234-237
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    • 1996
  • The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

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Propagation of Lightning Surges on Power AC Lines through Distribution Transformers (배전용 변압기를 통한 저압전원선으로의 뇌서지 전파)

  • Lee, Bok-Hee;Lee, Su-Bong;Lee, Dong-Moon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.468-471
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    • 2002
  • A strong need to improve the quality of electric power is increased because of increasing use of the sensitive and small-sized electronic devices. The surges on the low-voltage ac power lines are induced by nearby lightning return strokes, and the facilities for HA, OA, FA, ME as well as computer are easily damaged by high-voltage transients. The behaviors of lightning surge characteristics transferred from the primary winding to the secondary winding in distribution transformers using a Marx generator were experimentally investigated. The transfer characteristics of lightning surge associated with a custom service ground of secondary side were also examined.

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Statistical Characterization Fabricated Charge-up Damage Sensor

  • Samukawa Seiji;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.3
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    • pp.87-90
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    • 2005
  • $SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

Evaluation and Optimization of Dispersion in Slurry Preparation of Commercial LTCC Material (상용 LTCC 소재의 슬러리 제조 공정에서 분산성 평가 및 최적화)

  • Kwon, Hyeok-Jung;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee;Cho, Yong-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.341-347
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    • 2008
  • Laminated LTCC components of high integrity, fabricated by thick film process, are applied to industrial field of IT technology along with miniaturization trend of electronic devices. Dispersion states were examined by several evaluation methods with MLS-22, which is one of commercial LTCC powders, to achieve optimal dispersion as basis for stable LTCC fabrication process. Slurry viscosity, surface roughness of dip-coated slide glass, sedimentaion of slurry, and SEM observation of dried surface were utilized with respective amount change of various commercial dispersants. Among these commercial dispersants, optimal dispersion state was obtained with 0.4 wt% of BYK-111, from the results of various evaluation methods.

Sensitivity Analysis of Plasma Charge-up Monitoring Sensor

  • Lee Sung Joon;Soh Dea-Wha;Hong Sang Jeen
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.187-190
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    • 2005
  • High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

Comparative Analysis of Driving Inverters for the Piezo-Electric Transformer

  • Ishizuka, Yoichi;Shimokawa, Souichirou;Kurokawa, Fujio;Matsuo, Hirofumi;Kimura, Kengo;Aoike, Nanjo
    • Proceedings of the IEEK Conference
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    • 2002.07c
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    • pp.1390-1393
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    • 2002
  • Comparative analysis of driving inverters for piezo-electric transformer (PT) is performed and the suit- able drive circuit for portable devices such as personal digital assistants (PDA) is chosen with the experiment in this paper. As a result, a single-switch inverter with a small two winding reactor is chosen, and then the advantages of this method are clarified. It is also confirmed that the driving inverter with this method enables to realize a stabilized AC 400v output and 82% power efficiency from DC 3V input under the conditions of the variations of load current or input voltage from the experiments. Piezo-electric Transformer, Back-Light System, Single-Switch Driving Circuits, Control Method

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Look-up Table Based Pulse-Shaping Filter (Look-up 테이블 기반 펄스성형필터)

  • Lee, Chang-Ki;Lim, Hyung-Kyu
    • The Journal of the Korea institute of electronic communication sciences
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    • v.4 no.2
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    • pp.130-135
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    • 2009
  • In this paper, an efficient pulse-shaping filter structure for high-density and low-power electronic devices is proposed. The proposed structure is based on polyphase decomposition property and look-up table method. By Synopsys CAD simulations, it is shown that the use of the proposed method can result in reduction in the number of gates by 54% and can reduce power consumption by 9%.

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