• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.1
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• pp.380-386
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• 2020

The mobile application market has grown over the past decade since the advent of smartphones, making it the largest market for electronic device software. As competition intensifies in the mobile application market, the impact of application evaluations on the consumption and usage patterns of users has also significantly increased. Therefore, research has been conducted on measures to evaluate mobile applications, but most of the research has relied on qualitative methods such as expert-centered interviews or surveys. In addition, evaluation measures are being constructed from the service provider's perspective, not from the service user's perspective. However, the possibility of application-specific analyses that minimize the subjectivity of researchers is growing, as large amounts of user review data enable quantitative analysis of actual users' assessment of applications. Therefore, this study presents a methodology that can complement current problems with existing quality assessments for mobile applications by utilizing user review data. To this end, the Topic Modeling technique LDA (Latent Dirichlet allocation) is applied in order to elucidate ways to improve existing evaluation measures from a user's perspective. The study is expected to reduce bias in service assessment due to the subjectivity of service providers and researchers as well as provide a measure of assessment by area of mobile applications from a consumer perspective.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.292-295
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• 2003

This paper presents the architecture and its function of Tool server. MPEG-21 will enable all-electronic creation, delivery and trade of digital multimedia content and transparent usage of various content types on network device. Therefore, we can provide access to information and services from almost anywhere at anytime with various terminals and networks. In order to support multimedia delivery chain that contains content creation, production, delivery and consumption, we need some elements to identify, describe, manage and protect the contents. Thus, we define Digital Item Processing(DIP), Digital Item Adaptation(DIA) server and Tool server as primary objects of MPEG-21 multimedia framework. DIP provides a function which creates and consumes Digital Item(DI) as a kind of a digital object by user. DIA server adapts the original DI to the usage environment description sent from the terminal and transmits the adapted DI to the terminal. Tool sewer searches for a tool requested from DIP or DIA and downloads the best tool to DIP or DIA server. In this paper, we present how Tool server is organized and is used among 2 primary objects. The paper is structured as following: Section 1 briefly describes why MPEG-21 is needed and what MPEG-21 wants. We see the basic architecture of tool server and its functionality by each module in section 2. Section 3 explains a scenario that tool server transmits tool to DIP or DIA. The paper concludes in section 4.

• Progress in Medical Physics
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• v.30 no.3
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• pp.65-73
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• 2019

Purpose: We evaluated the motion-induced dosimetric effects on the field-in-field (FIF) technique for whole-breast irradiation (WBI) using actual patient organ motion data obtained from cine electronic portal imaging device (cine EPID) images during treatment. Materials and Methods: Ten breast cancer patients who received WBI after breast-conserving surgery were selected. The static FIF (SFIF) plan involved the application of two parallel opposing tangential and boost FIFs. To obtain the amplitude of the internal organ motion during treatment, cine EPID images were acquired five times for each patient. The outside contour of the breast (OCB) and chest wall (CW) contour were tracked using in-house motion analysis software. Intrafractional organ motion was analyzed. The dynamic FIF (DFIF) reflecting intrafractional organ motion incorporated into the SFIF plan was calculated and compared with the SFIF in terms of the dose homogeneity index (DHI_90/10) for the target and V₂₀ for the ipsilateral lung. Results: The average motion amplitudes along the X and Y directions were 1.84±1.09 mm and 0.69±0.50 mm for OCB and 1.88±1.07 mm and 1.66±1.49 mm for CW, respectively. The maximum motion amplitudes along the X and Y directions were 5.53 and 2.08 mm for OCB and 5.22 and 6.79 mm for CW, respectively. Significant differences in DHI_90/10 values were observed between SFIF and DFIF (0.94 vs 0.95, P<0.05) in statistical analysis. The average V₂₀ for the lung in the DFIF was slightly higher than that of the SFIF in statistical analysis (19.21 vs 19.00, P<0.05). Conclusion: Our findings indicate that the FIF technique can form a safe and effective treatment method for WBI. Regular monitoring using cine EPID images can be effective in reducing motion-induced dosimetric errors.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.176-176
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the Ion/Ioff and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• Journal of radiological science and technology
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• v.28 no.4
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• pp.307-315
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• 2005

In the ubiquitous computing environments, ICT industries of current society are developed in enormous growth. Medicine or patients with mobile devices can access at any time, any place. The medical procedures at the patient bedside are out of the scope of current systems, which means that patient record and image data access during the medical visit or the execution, recording and confirmation of the medicine prescriptions, still do not enjoy computerized support. Today, the exchange of medical images and clinical information is well defined by DICOM and HL7 standards. The DICOM independent terminal equipment image access system was developed in which a DICOM Engine acts as the gateway between a PACS DB and user's terminal. Implementation system is compatible with most currently available Integration system models. This paper presents a software technology where the medical and nursing staff will be equipped with any device connected by wire and wireless to a central server that provides access to the electronic patient records and that will actively inform about tasks pending distribution. The prototype described in this article implements a medical images and structured reports server that makes the search and recovery of data stored in the DICOM standard possible.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.12
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• pp.1627-1633
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• 2012

A deep-sea pressure vessel needs to protect the internal electrical equipment from the high external pressure. Thus, the pressure vessel should be designed to be watertight and structurally safe. In this study, a cylindrical-type pressure vessel comprising a hollow cylinder and cover plates at both ends is investigated. For communication between the internal electronic equipment and the external device, holes are bored on the cover plate to install underwater connectors. Considering the type of internal equipment and underwater connector specifications, multiple holes may be required. These holes can affect the structural safety of the pressure vessel cover plate. In this study, the optimum design of the hole arrangement in consideration of the structural safety of the cover plate was performed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.421-422
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• 2011

The first part is about development of a liquid target for a neutron source, which is designed to overcome many of the limitations of traditional beam-target neutron generators by utilizing a liquid target neutron source. One of the most critical aspects of the beam-target neutron generator is the target integrity under the beam exposure. A liquid target can be a good solution to overcome damage to the target such as target erosion and depletion of hydrogen isotopes in the active layer, especially for the one operating at high neutron fluxes with no need for water cooling. There is no inherent target lifetime for the liquid target neutron generator when used with continuous refreshment of the target surface exposed to the energetic beam. In this work, liquid target containing hydrogen has been developed and tested in vacuum environment. Potentially, liquid targets could allow a point neutron source whose spatial extension is on the order of 1 to $10{\mu}m$. And the second is about the vacuum ultraviolet (VUV) spectrometer which is designed as a five-channel spectral system for ITER main plasma measurement. To develop and verify the design, a two-channel prototype system was fabricated with No. 3 (14.4 nm~31.8 nm) and No. 4 (29.0 nm~60.0 nm) among the five channels. For test of the prototype system, a hollow cathode lamp is used as a light source. The system is composed of a collimating mirror to collect the light from source to slit, and two holographic diffraction gratings with toroidal geometry to diffract and also to collimate the light from the common slit to detectors. The two gratings are positioned at different optical distances and heights as designed. To study the appropriate detector for ITER VUV system, two different electronic detectors of the back-illuminated charge coupled device and the micro-channel plate electron multiplier were installed and the performance has been investigated and compared in the same experimental conditions. The overall system performance was verified by measuring the spectrums.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).