• Journal of the Korean Graphic Arts Communication Society
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• v.25 no.1
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• pp.65-80
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• 2007

The input and output device requires precise color representation and CMS (Color Management System) because of the increasing number of ways to apply the digital image into electronic publishing. However, there are slight differences in the device dependent color signal among the input and output devices. Also, because of the non-linear conversion of the input signal value to the output signal value, there are color differences between the original copy and the output copy. It seems necessary for device-dependent color information values to change into device-independent color information values. When creating an original copy through electronic publishing, there should be color management with the input and output devices. From the devices' three phases of calibration, characterization and color conversion, the device-dependent color should undergo a color transformation into a device-independent color. In this paper, an experiment was done where the input device used the linear multiple regression and the sRGB color space to perform a color transformation. The output device used the GOG, GOGO and sRGB for the color transformation. After undergoing a color transformation in the input and output devices, the best results were created when the original target underwent a color transformation by the scanner and digital camera input device by the linear multiple regression, and the LCD output device underwent a color transformation by the GOG model.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.616-619
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• 2004

Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation method of surge protective device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.49-52
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• 1998

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, it was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.185-185
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• 2007

• Journal of IKEEE
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• v.9 no.2 s.17
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• pp.101-107
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• 2005

This paper presents an one-chip controller for an electronic dispenser. The electronic dispenser is composed of electronic part and mechanical part. The electronic part is consisted of input keypad, micro-controller, display module, and pump module. In this paper we designed micro-controller for the electronic part. The micro-controller controls display module and pump module. The display module is composed by LCD device, and the pump module is composed by motor device . The micro-controller for an electronic dispenser is designed by VHDL. We used WX12864AP1 for the LCD device and SPS20 for the stepping motor. Also, the micro-controller is designed by Altera Quartus tool and verified with Agent 2000 Design-kit using APEX20K Device. In this paper, we present possibility to adopt of the biomedical device through the one-chip controller for the electronic dispenser.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.509-514
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• 2014

We demonstrate a simple and effective method to accurately position silicon nanowires (Si NWs) at desirable locations using drop-casting of Si NW inks; this process is suitable for applications in nanoelectronics or nanophotonics. Si NWs were assembled into a lithographically patterned sacrificial photoresist (PR) template by means of capillary interactions at the solution interface. In this process, we varied the type of solvent of the SiNW-containing solution to investigate different assembly behaviors of Si NWs in different solvents. It was found that the assembly of Si NWs was strongly dependent on the surface energy of the solvents, which leads to different evaporation modes of the Si NW solution. After Si NW assembly, the PR template was cleanly removed by thermal decomposition or chemical dissolution and the Si NWs were transferred onto the underlying substrate, preserving its position without any damage. This method enables the precise control necessary to produce highly integrated NW assemblies on all length scales since assembly template is easily fabricated with top-down lithography and removed in a simple process after bottom-up drop-casting of NWs.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1034-1037
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.10a
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• pp.597-599
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• 2022

When IoT device performs on-device AI, the device is required to use various AI models selectively according to target service and surrounding environment. Also, AI model can be updated by additional training such as federated learning or adapting the improved technique. Hence, for successful on-device AI, IoT device should acquire various AI models selectively or update previous AI model to new one. In this paper, we propose AI model repository to tackle this issue. The repository supports AI model registration, searching, management, and deployment along with dashboard for practical usage. We implemented it using Node.js and Vue.js to verify it works well.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.