• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.145-145
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• 1995

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.8
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• pp.1192-1197
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• 2013

In this paper Ubiquitous Medical Electronic Device Export was defined, and it's job analysis. The authors have been defined the job and classified duties and tasks of Ubiquitous Medical Electronic Device Export. To fine what is the most efficient task for Ubiquitous Medical Electronic Device Export, we have been investigated the levels of importance, difficulty, frequency and entry in each task. A DACUM committee is composed of total 12 members, which are one facilitator, 10 panel members, one coordinator & recorder to analyze the job of Ubiquitous Medical Electronic Device Export. Following is the result of this study. First, The process began with the identification of a job title and definition of Ubiquitous Medical Electronic Device Export. Second, a job model of Ubiquitous Medical Electronic Device Export is constructed based on the results of DACUM job analysis. 5 duties and 33 tasks are analyzed. Third, occupational specification was drawn up in consultation with SME council. Fourth, duty specification was drawn up in consultation. 33 tasks that are essential in entry level of occupation are identified. Fifth, task specification was drawn up in consultation. Detail task component which include skill, materials, knowledge, equipment, achievement level and tool was specified in task specification.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.28-31
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• 2014

This study aims to develop an electronic moxibustion device for the quantification of moxibustion, which progresses a critical role in traditional oriental medicine as well as to assess the characteristics of heating. The assessment revealed that the proposed electronic moxibustion treatment device can reduce the time required for reaching the desired heat level and continue to provide heat consistently. Moreover, heat transmitted to the treated area was found to correspond to a heating pattern of the proposed electronic moxibustion device. It proved both quantitative control and safe treatment for the proposed electronic moxibustion device.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.956-958
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• 1999

We designed and fabricated p-type MOSFETs with floating gate in n-type well lesion and examined their photo characteristics. The fabricated MOBFETs showed a high photo-respsonse characteristics, indicating a possibility as a photo sensor. The structures of MOSFETs were changed as to the number of gate and channel. As the number of channel increased, the induced current by light source s increased. However, the effect of the number of gate was negligble on the photo-response characteristics of the device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.148-148
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• 1995

• Journal of Power Electronics
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• v.14 no.2
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• pp.257-264
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• 2014

A novel converter-free AC LED driver that is highly resistant to the fluctuation of AC voltage is proposed in this study. By removing large passive components, such as the bulky capacitor and the large-value inductor, the integration of the driver circuit is enhanced while the driving current remains stable. The proposed circuit provides LED lamps with a driving current that can follow the sinusoid waveform to obtain a very high power factor (PF) and low total harmonic distortion (THD). The LED input current produced by this driving current is insensitive to fluctuations in the AC voltage. Users will thus not feel that LED lamps are flashing during the fluctuation. Experiment results indicate that the proposed system can obtain PF of 0.999 and THD as low as 3.3% for a five-string 6 W LED load under 220 V at 50 Hz.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.137-140
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• 2005

The electronic dispenser is composed of electronic part and mechanical part. Electronic part is consisted of input keypad, micro-controller, display module, and pump module. In this paper we designed micro-controller for electronic part. The micro-controller controls display module and pump module. The display module is composed by LCD device, and the pump module is composed by motor device. The micro-controller for an electronic dispenser is designed by VHDL. We used WX12864APl for the LCD device and SPS20 for the stepping motor. Also, the micro-controller is designed by Altera Quartus tool and verified with Agent 2000 Design-kit using APEX20K Device. In this paper, we present possibility to adopt of biotechnology field through designing of one-chip controller for an electronic dispenser.