Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1995.06a
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- Pages.148-148
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- 1995
Characteristics of the heteroeppitaxial $Si_{1-x}Ge_x$ films grown by RTCVD method
- Chung, W.J. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
- Kwon, Y.K. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
- Bae, Y.H. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
- Kim, K.I. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
- Kang, B.K. (Deppartment of Electrical Engineering POSTECH) ;
- Sohn, B.K. (Department of Electronics Kyungpook National University)
- Published : 1995.06.01
Abstract
Keywords