Characteristics of the heteroeppitaxial $Si_{1-x}Ge_x$ films grown by RTCVD method

  • Chung, W.J. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
  • Kwon, Y.K. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
  • Bae, Y.H. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
  • Kim, K.I. (Electronic device & system research Lab., Research Institute of Industrial Science & Technology) ;
  • Kang, B.K. (Deppartment of Electrical Engineering POSTECH) ;
  • Sohn, B.K. (Department of Electronics Kyungpook National University)
  • Published : 1995.06.01