• 한국인쇄학회지
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• 제25권1호
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• pp.65-80
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• 2007

The input and output device requires precise color representation and CMS (Color Management System) because of the increasing number of ways to apply the digital image into electronic publishing. However, there are slight differences in the device dependent color signal among the input and output devices. Also, because of the non-linear conversion of the input signal value to the output signal value, there are color differences between the original copy and the output copy. It seems necessary for device-dependent color information values to change into device-independent color information values. When creating an original copy through electronic publishing, there should be color management with the input and output devices. From the devices' three phases of calibration, characterization and color conversion, the device-dependent color should undergo a color transformation into a device-independent color. In this paper, an experiment was done where the input device used the linear multiple regression and the sRGB color space to perform a color transformation. The output device used the GOG, GOGO and sRGB for the color transformation. After undergoing a color transformation in the input and output devices, the best results were created when the original target underwent a color transformation by the scanner and digital camera input device by the linear multiple regression, and the LCD output device underwent a color transformation by the GOG model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.616-619
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• 2004

Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation method of surge protective device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.49-52
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• 1998

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, it was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.185-185
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• 2007

• 전기전자학회논문지
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• 제9권2호
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• pp.101-107
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• 2005

본 논문에서는 전자 디스펜서(dispenser)용 제어기를 단일 칩으로 설계하였다. 전자 디스펜서는 전자부분과 기계부분으로 구성되며, 전자부분은 이력 키패드, 제어기, 디스플레이 모듈과 펌프모듈로 구성된다. 본 논문에서 설계한 제어기는 LCD 소자와 모터 펌프를 제어하며 VHDL을 이용하여 설계하였다. LCD 소자로서 WX12864AP1을 사용하였으며, 스테핑 모터로는 SPS20을 사용하였다. 이 제어기는 Altera사의 Quartus 툴을 사용하여 설계 후, Agent 2000 설계 키트와 APEX20K 소자를 사용하여 LCD 모듈과 모터모듈에 연결하여 동작 검증함으로, 동작이 원활히 이루어짐을 확인하였다. 본 논문에서는 전자 디스펜서의 제어기 설계를 통해 전자 디스펜서의 전용 칩을 ASIC으로 구현하여 바이오기술 분야의 기기에 적용할 수 있는 가능성을 제시하였다.

• 한국재료학회지
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• 제24권10호
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• pp.509-514
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• 2014

We demonstrate a simple and effective method to accurately position silicon nanowires (Si NWs) at desirable locations using drop-casting of Si NW inks; this process is suitable for applications in nanoelectronics or nanophotonics. Si NWs were assembled into a lithographically patterned sacrificial photoresist (PR) template by means of capillary interactions at the solution interface. In this process, we varied the type of solvent of the SiNW-containing solution to investigate different assembly behaviors of Si NWs in different solvents. It was found that the assembly of Si NWs was strongly dependent on the surface energy of the solvents, which leads to different evaporation modes of the Si NW solution. After Si NW assembly, the PR template was cleanly removed by thermal decomposition or chemical dissolution and the Si NWs were transferred onto the underlying substrate, preserving its position without any damage. This method enables the precise control necessary to produce highly integrated NW assemblies on all length scales since assembly template is easily fabricated with top-down lithography and removed in a simple process after bottom-up drop-casting of NWs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1034-1037
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2022년도 추계학술대회
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• pp.597-599
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• 2022

IoT 디바이스에서 on-device AI를 수행할 때, 타겟 서비스나 디바이스의 환경에 따라 필요한 AI 모델이 달라질 수 있다. 또한, 기존 AI 모델도 federated learning과 같이 추가적인 데이터를 이용해 트레이닝을 하거나 보다 향상된 새로운 기법을 사용하는 등 업데이트가 일어날 수 있다. 이에 따라 IoT 디바이스에서 양질의 AI 서비스를 수행하기 위해서는 상황에 따라 필요한 AI 모델을 선택적으로 사용하거나 최적화된 최신 버전의 AI 모델로 업데이트 할 수 있어야 한다. 본 논문에서는 이를 지원하기 위한 AI 모델 레포지토리를 제안한다. 레포지토리는 AI 모델의 등록, 검색, 관리 및 배포를 지원하며 실사용을 위한 웹 포털을 포함한다. 제안하는 시스템의 실효성 확인을 위해 Node.js와 Vue.js로 구현하여 동작을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.