• 한국전자통신학회논문지
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• 제12권6호
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• pp.1049-1056
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• 2017

본 논문에서는 WLAN 시스템에 적용 가능한 두 개의 원호 모양의 선로를 갖는 모노폴 안테나를 설계, 제작 및 측정하였다. 제안된 안테나는 마이크로스트립 급전을 바탕으로 두 개의 원호 모양의 선로를 갖도록 설계하여 이중대역 특성을 갖도록 하였다. 상용 툴인 HFSS을 사용하여 L2, L5, 슬릿유무에 대한 시뮬레이션을 수행하여 최적화된 수치를 얻었다. 제안된 안테나의 크기($12.0{\times}29.5{\times}1.0mm^3$)는 유전율 4.4인 FR-4 기판($13.0{\times}34.0{\times}1.0 mm^3$) 위에 설계 및 제작되었다. 제작 결과, 제안된 안테나는 -10 dB 임피던스 대역폭을 기준으로 360 MHz(2.29~2.65 GHz) 그리고 1,245 MHz (4.705~5.95 GHz)의 대역폭을 얻었다. 또한, 제안된 안테나의 측정 이득과 방사패턴 특성이 요구되는 이중대역에서 제시되었다.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.23-29
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• 2002

The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.117-123
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• 2015

Cholesteric liquid crystals are one dimensional photonic band-gap materials due to their birefringence and periodic structure. Dye doped cholesteric liquid crystals are self-assembling, mirror-less, low threshold laser structures that exhibit distributed feedback. In this review paper, we have presented the development in the field of lasing characteristics of dye doped cholesteric liquid crystals.

• 대한전자공학회논문지SD
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• 제43권9호
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• pp.64-68
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• 2006

본 연구에서는 Si bump를 이용해 기판의 기계적, 열적 특성을 개선한 MCM-D 기판공정을 개발하였고, 이를 system-on-package(SOP)-D개념의 system 구현에 적용하고자 하였다. 이 과정에서 밀리미터파 대역에 적용될 수 있는 필터를 설계하고 구현하여 그 특성을 관찰하였다. 두 가지 형태의 필터를 구현하였는데 첫 번째는 공진기간의 커플링을 이용한 구조로서 2층의 금속층과 3층의 유전체(BCB)를 이용하였다. 구현된 필터 특성은 중심주파수 55 GHz에서의 삽입손실이 2.6 dB이고 군지연이 0.06 ns정도로 우수한 특성을 나타내었다. 또한 일반적으로 알려진coupled line 형태의 필터를 구현하였는데 삽입손실이 3 dB, 군지연이 0.1 ns정도의 특성을 나타내었다. 이렇게 내장형 필터를 포함한 MCM-D 기판은 MMIC를 flip-chip 방법으로 실장 할 수 있어서 집적화된 밀리미터파 대역 초소형 system 구현에 적용되어 우수한 특성을 나타낼 것으로 기대된다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.155-155
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• 2015

• 한국전자파학회논문지
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• 제23권3호
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• pp.306-313
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• 2012

본 논문에서는 UMTS Tx 대역(1.92~1.98 GHz)과 Rx 대역(2.11~2.17 GHz)에서 동작하는 이중 대역 E 슬롯 마이크로스트립 패치 안테나 사이의 격리도 향상을 위한 EBG 구조를 제안하였다. 제안된 EBG 구조는 이중 대역에서 두 안테나 사이의 격리도를 향상시키기 위하여 서로 다른 크기의 변형된 버섯 모양(mushroom-type) 구조로 단위 셀들을 배열하였다. 제안된 구조는 패치 안테나와 접지 면을 공유하지 않으며, 설계되어진 단위 셀의 크기는 각각 $15.6mm{\times}4mm$, $17.4mm{\times}4mm$이다. 제안된 안테나의 전체 크기는 $210.5mm{\times}117mm$이고, FR-4(비유전율=4.6, 기판 두께= 3.93 mm) 기판 상에 설계되어졌다. 제작된 안테나의 측정 결과, 제안된 EBG 구조의 사용으로 UMTS Tx 대역과 Rx 대역에서 각각 9 dB, 12 dB의 격리도 향상을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.