• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.35-43
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• 1999

Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.262-263
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• 2005

For mechanical and electrical stability and environment protection, Cu and stainless steel stabilizer is laminated to Ag layer to produce a composite neutral-axis(N-A) architecture in which the YBCO layer is centered between the oxide buffered metallic substrate and stabilizer strip lamination. this architecture allows the wire to meet operational requirements including stresses at cryogenic temperature, winding tensions, mechanical bending requirements thermal and electrical stability under fault conditions. we have experimentally studied mechanical properties of laminated stainless steel stabilizer on YBCO coated conductors. we have laminated YBCO coated conductors by continuous dipping soldering process. we have investigated lamination interface between solder and stabilizer, YBCO coated conductor. we evaluated bonding properties tensile / shear bonding strength, peeling strength laminated YBCO coated conductors.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.357-362
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• 2007

AZO(Aluminum-doped Zinc Oxide) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with ITO(Indium Tin Oxide). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$ for 2 hr with $N_2$ atmosphere. The AZO films were used as an anode contact to fabricate OLEDs(Organic Light Emitting Diodes). OLEDs with $AZO/TPD/Alq_3/Al$ configuration were fabricated by thermal evaporation. We investigated that the electric, structural and optical properties of AZO thin films, which measured using the methods of XRD, SEM, Hall measurement and Spectrophotometer. The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• 공업화학
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• 제31권1호
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• pp.73-83
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• 2020

전자기기의 고도화 및 소형화에 따라, 기기의 효율 및 수명에 영향을 미치는 발열 문제를 해결하는 것은 가장 큰 해결 난제 중 하나가 되었다. 이를 해결하기 위하여 금속 및 세라믹 기반의 높은 열전도도를 가지는 재료가 많이 사용되어 왔으나, 낮은 기계적 물성 및 높은 중량으로 인해 가벼우면서도 기계적 특성이 좋은 고분자를 기지재로 사용하고 높은 열전도도를 갖는 탄소재료를 필러로 사용한 열전도성 복합재가 주목받고 있다. 열전도성 복합재의 열전도도를 향상시키기 위해서는 효과적인 포논의 이동이 이루어지도록 포논 산란이 억제되야한다. 본 논문에서는 탄소재료/고분자 복합재의 포논 이동 및 산란 억제에 관련된 연구를 분류하고, 열전도도 향상을 위하여 적용된 다양한 방법들에 대하여 논의하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.63-69
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• 2019

전자부품에 대한 보드실장은 아직까지 솔더를 이용한 접합기술을 주로 이용하고 있다. 그러나, 솔더의 크? 및 피로특성으로 인한 접합부 내구한계로, 자동차 전장모듈에서는 반영구적인 접합기술인 프레스 핏(Press-fit) 접합기술 적용을 확대하고 있다. 프레스 핏 접합은 프레스 핏 금속단자를 보드내 쓰루 홀(Through hole)에 기계적으로 삽입하여 체결하는 접합기술로써, 적절한 금속단자의 소성변형으로 쓰루 홀 내부 표면접합을 밀착시킴으로써 강건한 접합을 유도한다. 본 논문에서는 보드내 쓰루 홀 크기 및 표면처리에 따른 프레스 핏 접합 특성 및 신뢰성을 솔더링과 함께 비교하기 위해, 보드 쓰루 홀 크기에 따른 삽입강도 및 삽발강도를 평가하였으며, 열충격 시험을 통한 실시간 저항변화를 통해 프레스 핏 및 솔더링 접합부의 저항변화를 관찰하였다. 또한, 각 접합부위 분석을 통한 프레스 핏 및 솔더링 접합열화를 분석하여 주요 파손모드를 고찰하고자 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.35-35
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• 2009

Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (${\Delta}I_s$) between "1" state and "0" state. The back interface of SOI based capacitorless 1T-DRAM memory cell plays an important role on the memory performance. As the back interface properties were degraded by increase rapid thermal annealing (RTA) process, the performance of 1T-DRAM was also degraded. On the other hand, the properties of back interface and the performance of 1T-DRAM were considerably improved by post RTA annealing process at $450^{\circ}C$ for 30 min in a 2% $H_2/N_2$ ambient.

• 대한기계학회논문집
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• 제18권8호
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• pp.2139-2157
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• 1994

In order to understand the delamination between leadframe and epoxy molding compound in an electronic packaging of surface mounting type, the stress intensity factor, T-stress and J-integral in fracture mechanics are obtained. The effects of geometry, material properties and molding process temperature on the delamination are investigated taking into account the temperature dependence of the material properties, which simulates as more realistic condition. As the crack length increases the J-integral increases, which suggest that the crack propagates if it starts growing from the small size. The effects of the material properties and molding process temperature on stress intensity factor, T-stress is and J-integral are less significant than the chip size for the practical cases considered here. The T-stress is negative in all eases, which is in agreement with observation that interfacial crack is not kinked until the crack approaches the edge of the leadframe.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.183-189
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• 2013

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.