• 제목/요약/키워드: Electronic and thermal properties

검색결과 1,073건 처리시간 0.026초

투명전극 응용을 위한 ZnO박막과 Ga 도핑 된 ZnO박막의 성장 후 열처리에 따른 특성분석 (Characterization of ZnO Thin Films and Ga doped ZnO Thin Films Post Annealing for Transparent Conducting Oxide Application)

  • 장재호;배효준;이지수;정광현;최현광;전민현
    • 한국전기전자재료학회논문지
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    • 제22권7호
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    • pp.567-571
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    • 2009
  • Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

초음파 분무 열분해법으로 제조한 ZnO막의 전기적, 구조적 특성에 미치는 인듐 확산 효과 (Indium Diffusion Effects on the Structural and Electrical Properties of ZnO Films Prepared by Ultrasonic Spray Pyrolysis)

  • 심대근;배성찬;마대영
    • 한국전기전자재료학회논문지
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    • 제14권10호
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    • pp.828-834
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    • 2001
  • Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

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마그네트론 스퍼터링법으로 증착한 VOx 박막의 열처리에 따른 광학적.전기적 특성 변화 (Effect of thermal annealing on optical and electrical properties of VOx deposited by magnetron sputtering)

  • 공영주;박용섭;박재욱;이성욱;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.247-247
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    • 2008
  • In this work, VOx thin films have been deposited by DC magnetron sputtering method on glass substrate using argon and oxygen gases. We examined the effects of the post annealing temperature on the structural, optical, and electrical variations of VOx films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using RTA equipment in air ambient. The thickness of the film and interface between film and substrate were observed by field emission scanning electron microscopy (FESEM). To analysis the structural properties of VOx with various annealng temperatures, we used XRD method. Also, we investigated the electrical and optical properties of VOx thin films using hall measurement, 4-point probe, and UV-visible methods.

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둥근형 무전극 형광램프의 자계 분포 특성 (Magnetic Field Distribution Characteristics of Ring-Shaped Electrodeless Fluorescent Lamp)

  • 최용성;조재철;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.53-57
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    • 2006
  • In this paper, maxwell 3D finite element analysis program (Ansoft) was used to obtain electromagnetic properties associated with the coil and nearby structures. The electromagnetic emitting properties were presented by 3D simulation software operated at 250 kHz and some specific conditions. The electromagnetic field in the ferrite core was shown to be high and symmetric. An LS-100 luminance meter and a Darsa-2000 spectrum analyzer were used in the experiment. According to data on the lamp tested using high magnetic field ferrite, the optical and thermal wave fields were shown to be high around the ring-shaped electrodeless fluorescent lamp. The optical or light field was high at the center of the bulb rather than around the ferrite core. The light conditions of the bulb were assumed to be complex, depending on the condition of the filler gas, the volume of the bulb, and the frequency of the inverter. Our results have shown coupling between the gas plasma and the field of the light emitted to be nonlinear.

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4H-SiC기판 위에 Aerosol Deposition으로 증착된 Al2O3박막의 후열처리 효과 (Post Annealing Effect on the Characteristics of Al2O3 Thin Films Deposited by Aerosol Deposition on 4H-SiC)

  • 유수산나;강민석;김홍기;이영희;구상모
    • 한국전기전자재료학회논문지
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    • 제27권8호
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    • pp.486-490
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    • 2014
  • $Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

마이크로 가스센서를 위한 저전력 마이크로 히터의 제조 I. 유한요소법에 의한 열분포해석 (Fabrication of Low Power Micro-heater for Micro-Gas Sensor I. The Thermal Distribution Analysis by The Finite Element Method)

  • 정완영;임준우;이덕동;노보루 야마조에
    • 센서학회지
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    • 제6권4호
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    • pp.337-345
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    • 1997
  • 마이크로 가스센서 제조를 위해 PSG/$Si_{3}N_{4}$를 다이아프램으로 하고 Pt 패턴을 히터로 하는 마이크로 히터를 설계하였다. 백금히터와 감지막을 위한 백금전극을 동일평면에 설계하여 하나의 노광공정으로 실현하도록 센서의 형태를 가정하였다. 마이크로 가스센서의 가열부의 열적거동을 유한요소법에 의해 수치해석하므로써 다이아프램부분의 온도분포, 소비전력 및 감지막부분의 온도분포를 예측할 수 있었다. 본 연구에서 제안된 히터와 감지막이 동일 평면에 이웃하는 구조의 센서와 일반적 마이크로센서구조인 감지막/절연막/히터의 구조를 갖는 센서의 열적거동을 비교 분석하였다.

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Structural and Optoelectronic Properties of SnO2 Nanowires

  • Lee, Jong-Soo;Sim, Sung-Kyu;Min, Byung-Don;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • 제5권3호
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    • pp.93-97
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    • 2004
  • Structural and optoelectronic properties of as-synthesized SnO$_2$ nanowires were examined in this study. The SnO$_2$ nanowires were first synthesized by thermal evaporation of ball-milled SnO$_2$ powders in argon atmosphere without the presence of any catalysts, arid their structural properties are then investigated by X-ray diffraction, Raman scattering, scanning electron microscopy, and transmission electron microscopy. This investigation revealed that the synthesized SnO$_2$ nanowires are single-crystalline and that their growth direction is parallel to the [100] direction. In addition, photoresponse of a single SnO$_2$ nanowire was performed with light with above-gap energy, and different characteristics of photoresponses were obtained for the nanowire at ambient atmosphere and in vacuum. The photoresponse mechanism is briefly discussed in this paper.

플라즈마 및 니트로셀롤로우스로 처리된 유리기판을 사용한 MWCNT 스프레이 박막의 수소가스 검출특성 (Sensing Properties of Hydrogen Gas for the MWCNT Thin Film Sprayed on the Glass Substrate Cured with Plasma and Nitrocellulose)

  • 장경욱
    • 한국전기전자재료학회논문지
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    • 제24권4호
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    • pp.290-296
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    • 2011
  • Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as a resistive gas sensors for the $H_2$ gas detection. Sensor films were fabricated by the air spray method using the multi-walled CNTs dispersion solution on the glass substrates cured with plasma and nitrocellulose. Sensors were characterized by the resistance measurements in the self-fabricated oven in order to find the optimum detection properties for the hydrogen gas molecular. The sensitivity and the linearity of the MWVNT sensors using the glass substrate cured with plasma for the $H_2$ gas concentration of 0.06~0.6 ppm are 0.013~0.097%/sec and 0.131~0.959%FS, respectively. The MWCNT film was excellent in the response for the hydrogen gas moleculars and its reaction speed was very fast, which could be using as hydrogen gas sensor. The resistance of the fabricated sensors decreases when the sensors are exposed to $H_2$ gas.

Microstructures and Dielectric Properties of SrTiO$_3$-Based BL Capacitor with Content of Ca

  • 김충혁;최운식;이준웅
    • 한국전기전자재료학회논문지
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    • 제12권1호
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    • pp.35-43
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    • 1999
  • Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

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스테인레스 강 안정화 YBCO 초전도선재의 접합 특성에 관한 연구 (A study on the bonding properties of YBCO coated conductors with stainless steel stabilizer)

  • 김태형;오상수;송규정;김호섭;고락길;신형섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.262-263
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    • 2005
  • For mechanical and electrical stability and environment protection, Cu and stainless steel stabilizer is laminated to Ag layer to produce a composite neutral-axis(N-A) architecture in which the YBCO layer is centered between the oxide buffered metallic substrate and stabilizer strip lamination. this architecture allows the wire to meet operational requirements including stresses at cryogenic temperature, winding tensions, mechanical bending requirements thermal and electrical stability under fault conditions. we have experimentally studied mechanical properties of laminated stainless steel stabilizer on YBCO coated conductors. we have laminated YBCO coated conductors by continuous dipping soldering process. we have investigated lamination interface between solder and stabilizer, YBCO coated conductor. we evaluated bonding properties tensile / shear bonding strength, peeling strength laminated YBCO coated conductors.

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