• 공업화학
• /
• 제4권2호
• /
• pp.264-272
• /
• 1993

소형화되는 전기, 전자 제품의 효율성과 신뢰성를 제고시키기 위해서 주요 부품인 마그네트 와이어의 내열성에 대한 연구가 진행되고 있다. 마그네트 와이어의 내열성은 주로 에나멜 바니쉬로부터 형성되는 고분자 피막의 물성과 밀접한 관계가 있다. 내열성 에나멜 바니쉬의 설계와 도막 형성과정이 와이어의 물성과 관련지어 논의되었다. 아울러 내열성에 영향을 주는 요인들을 완성 와이어의 물성 평가방법을 통하여 고찰하였다.

• Composites Research
• /
• 제35권2호
• /
• pp.69-74
• /
• 2022

본 연구에서는 공정적 간편함으로 전자 패키징 분야의 배선 및 자동차 업계, 전자 제품 등 광범위한 범위에 사용되고 있는 도전성 페이스트를 다양한 공정조건으로 제조한 후, 열적, 기계적, 전기적 특성을 분석 및 기계적 특성에 대한 시뮬레이션 연구를 진행하여 최적의 도전성 페이스트 제조 공정 조건을 확립하고자 하였다. 우선 도전성 페이스트의 필수 구성 요소인 바인더 수지를 종류를 다양하게 설정하여 도전성 페이스트를 제조하였고, 열전도도, 인장강도 및 연신율 등의 특성을 분석하였다. 바인더 수지 중, 유연 에폭시 소재를 적용한 도전성 페이스트의 물성이 가장 우수하였으며, 도전성 페이스의 물성 data base를 토대로 하여 기계적 특성에 대한 시뮬레이션 연구를 진행하였다. 기계적 특성에 대한 시뮬레이션 결과, Ag flake 부피 분율이 60%일 때 가장 우수한 물성을 나타내었다.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권1호
• /
• pp.27-34
• /
• 1995

The analysis of nonlinear equivalent circuit and the resonance characteristics of input current and output voltage were simulated, and their electrical properties are discussed in the transverse-type piezoelectric ceramic transformer. The nonlinear resonance characteristics of input current and output voltage showed by the thermal effect due to a higher driving current, the nonlinearity increased greatly as driving current increased. When load resistor was 100[M.ohm.], the nonlinear coefficient was -1.3. The nonlinear resonance curve of input current and output voltage for a variation of input voltage and load resistor agreed with the discussed theory. The output voltage increased nearly proportioned to input voltage when load resistors were below 50[M.ohm.], the voltage step-up ratio decreased when a load resistor was 100[M.ohm.] and their maximum value was 950.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.84-84
• /
• 2010

Nano particles (10nm SiO2) were silane-treated in order to modify the surface characteristics in a epoxy nanocomposite. Then. micro particles ($3{\mu}m$ SiO2) were poured into the epoxy nanocomposite using various mixing process and epoxy/ micro-and-nano- mixed composites (EMNC) were prepared. The thermal (Tg) and mechanical (tensile and flexural strength) properties were measured by DMA and UTM and the data was estimated by Weibull plot.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.150-153
• /
• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si wafers deposited by r.f magnetron sputtering, were analyzed with annealing condition(100$0^{\circ}C$, 120 min) by four point probe, SEM and XRD. Until annealing temperature of 100$0^{\circ}C$, MgO had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. The thermal characteristics of Pt micro-heater were analyed with Pt-RTD integrated on the same substrate, In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of 25~40$0^{\circ}C$ temperature of Pt micro-heater had up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
• /
• pp.101-104
• /
• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• 한국진공학회지
• /
• 제4권S2호
• /
• pp.84-89
• /
• 1995

The growth and the film characteristics of heteroepitaxial $Si_{1-x}Ge_x$ films growth by the Rapid Thermal Chemical Vapor Deposition(RTCVD)method are described. For the growth of $Si_{1-x}Ge_x$ heteroepitaxial layers, $SiH_4/GeH_4/H_2$gas mixtures are used. The growth conditions are varied to investigate their effects on the Si/Ge composition ratios, the interface abruptness and crystalline properties. The Si/Ge composition ratios are analyzed with the RBS and the SIMS techniques, and the interface abruptness are deduced from these data. The crystalline properties are analyzed from TEM pictures. The experimental data shows that the crystalline perfection is excellent at the growth temperature of as low as $650^{\circ}C$, and the composition ratios change linearly with $SiH_4/GeT_$$ gas mixing ratios in our experimental ranges. Boron doping experiments are also performed using 200 ppm $B_2H_6$ source gas. The doping profiles are measured with SIMS technique. The SIMS data shows that the doping abruptness can be controlled within about 200$\AA$/decade.

• 한국전기전자재료학회논문지
• /
• 제15권8호
• /
• pp.713-719
• /
• 2002

In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

• 한국전기전자재료학회논문지
• /
• 제14권3호
• /
• pp.215-222
• /
• 2001

Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was prepared by doping Polyaniline Ermeralidine Base(PANI EB) with DL-10-Camphorsulfonic Acid(CSA). PANI-CSA ES was solved in an organic solvent by ultrasonification for different periods of time and its surface resistivity was measured. Several PANI-CSA ES solutions solved in different organic solvents were prepared and their surface resistivities were measured. Thermal stability of film casted with PANI-CAS ES solution in m-cresol was estimated by measuring its surface conductivity and the content of this moisture and organic solvents. PANI-CSA ES was blended with different polymeric binders to improve its physical properties and the surface resistivities of several kinds of PANI-CSA ES blends were measured as a function of the content of PANI-CSA ES. PANI-CSA ES polymerized by 1-step oxidative polymerization was prepared and its surface resistivity was measured.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.246-247
• /
• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.