• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.121-127
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• 2005

This paper presents the thermal characteristics of a Bragg grating recorded in photopolymer. We record hologram gratings using a 532 nm Nd : YAG laser in DuPont HRF 150-38 photopolymer films and analyze the diffraction efficiency versus thermal exposure conditions. For the case of recording after heating, the diffraction efficiency of the hologram is more than $70\%$ at $100^{\circ}C$ but is decreased exponentially at temperatures over $100^{\circ}C$. It is observed in the recording before heating that the diffraction efficiency of the hologram fixed by a UV light is increased to approximately $10\%$ at $100^{\circ}C$, but the holograms are erased at temperatures over $120^{\circ}C$.

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.332-336
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• 2009

When NCAs(non-conductive adhesives) are used for adhesion of micro-electronic devices, they often show problems such as delamination and cracking, due to the differences of CTE(coefficients of thermal expansion) between NCAs and substrates. Additions of inorganic particles or flexibilizers have been performed to solve those problems. The effects of silica addition on thermal/mechanical properties of amino modified siloxane(AMS)/silica/epoxy-nanocomposites were examined. The silica was treated by 3-glycidoxypropyltrimethoxysilane(GPTMS) for better compatibility between silica and epoxy matrix. AMS/silica/epoxy-nanocomposites filled with various amounts of AMS(1 and 3 phr) and various amounts of silica(3, 5 and 7 phr) were prepared. And Tg, moduli and CTE of nanocomposites were analyzed. Tg of AMS/Aerosil(non-modified silica)/epoxy-nanocomposites decreased from 125 to $118^{\circ}C$ with increasing Aerosil contents and moduli increased from 2,225 to 2,523 MPa with increasing Aerosil contents. Tg of AMS/M-silica (modified silica)/epoxy-nanocomposites decreased from 124 to $120^{\circ}C$ with increasing M-silica contents and moduli increased from 1,981 to 2,743 MPa with increasing M-silica contents. CTE of AMS/Aerosil/epoxy-nanocomposites and AMS/M-silica/epoxy-nanocomposites showed decreasing tendency regardless of the surface treatments.

• Applied Chemistry for Engineering
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• v.19 no.2
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• pp.161-167
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• 2008

Multi-walled carbon nanotubes (MWCNT)-reinforced poly(ethylene-co-ethyl acrylate) (EEA) nanocomposites were prepared by both melt and solution mixing methods. The mechanical, thermal, and electrical properties were investigated as a function of type and loading of CNT. The tensile strength and modulus increased, while elongation at break decreased with increasing MWCNT content. The hollow-type MWCNT showed an improved tensile strength and elongation at break compared with a conventional MWCNT. The thermal degradation temperature was increased by around $40^{\circ}C$ with increasing the amount of MWCNT. The melt-mixed composites showed the highest volume resistivity. In the case of solution-mixed composites, the conventional MWCNT was estimated to show much lower volume resistivity than that of hollow MWCNT. The number and length of extruded CNT onto the fractured surface increased by both increasing the content of CNT and employing the tensile strain to the sample. The melt-mixed specimens showed much smaller number and shorter length of extruded CNT.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.6
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• pp.645-650
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• 2010

In this research, the problem of combustion and its system in Hyundai Heavy Industries and Sachuan Unison will be analyzed in order to provide some methods of thermal efficiency improvement and help to make a positive influence on fuel savings and their productivity. In forging industries, in order to improve the material properties of the industrial heating elements which are being used, depending on different operation conditions of system equipment and combustion systems, fuel consumption and material properties can get a profound influence. Thus, analyzing about combustion system characteristics of 100 tons heating furnace and heat treatment furnace which are in operation in Hyundai Heavy Industry will be done. In usual, air-fuel ratio is proper for capacity of burner installed in each heating device, otherwise burner gets an automatic turn down ratio. It has a profound influence on heating performance and precision of temperature because it is the fixed characteristics of every industrial furnace. Even if there are some methods to improve the heating performance of a furnace installed with a large capacity burner, it is very difficult to obtain the precision of temperature in maintenance interval. Based on this, performance of burner can be drove to best by improving combustion system. Proper Combustion characteristic for each heating interval was analyzed in heating furnace in Hyundai Heavy Industry. A project plan for improving fuel savings and increasing precision of temperature was presented in this research.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.294-300
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• 2010

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to $553\;cd/m^2$ and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were $1724\;cd/m^2$ and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.297.2-297.2
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• 2016

Photoacoustic generation of ultrasound is an effective approach for development of high-frequency and high-amplitude ultrasound transmitters. This requires an efficient energy converter from optical input to acoustic output. For such photoacoustic conversion, various light-absorbing materials have been used such as metallic coating, dye-doped polymer composite, and nanostructure composite. These transmitters absorb laser pulses with 5-10 ns widths for generation of tens-of-MHz frequency ultrasound. The short optical pulse leads to rapid heating of the irradiated region and therefore fast thermal expansion before significant heat diffusion occurs to the surrounding. In this purpose, nanocomposite thin films containing gold nanoparticles, carbon nanotubes (CNTs), or carbon nanofibers have been recently proposed for high optical absorption, efficient thermoacosutic transfer, and mechanical robustness. These properties are necessary to produce a high-amplitude ultrasonic output under a low-energy optical input. Here, we investigate carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite transmitters and their nanostructure-originated characteristics enabling extraordinary energy conversion. We explain a thermoelastic energy conversion mechanism within the nanocomposite and examine nanostructures by using a scanning electron microscopy. Then, we measure laser-induced damage threshold of the transmitters against pulsed laser ablation. Particularly, laser-induced damage threshold has been largely overlooked so far in the development of photoacoustic transmitters. Higher damage threshold means that transmitters can withstand optical irradiation with higher laser energy and produce higher pressure output proportional to such optical input. We discuss an optimal design of CNT-PDMS composite transmitter for high-amplitude pressure generation (e.g. focused ultrasound transmitter) useful for therapeutic applications. It is fabricated using a focal structure (spherically concave substrate) that is coated with a CNT-PDMS composite layer. We also introduce some application examples of the high-amplitude focused transmitter based on the CNT-PDMS composite film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.