• Title/Summary/Keyword: Electronic and thermal properties

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Lead-free Solder Alloys (무연솔더합금)

  • 이호영
    • Journal of the Korean institute of surface engineering
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    • v.35 no.4
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    • pp.218-231
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    • 2002
  • As the environmental regulation worldwide emerges, most notably in Europe and Japan, the elimination of Pb usage in electronic assemblies has been an important issue for microelectronics assembly due to the inherent toxicity of Pb. This has provided an impetus towards the development of Pb-free solders. A major factor affecting alloy selection is the melting point, since this will have a major impact on the other polymeric materials used in microelectronic assembly and encapsulation. Other important manufacturing issues are cost, availability, and wetting characteristics. Reliability related properties include mechanical strength, fatigue resistance, coefficient of thermal expansion and reactivity with substrate. In this article, Pb-free solder alloys have been proposed so far have been reviewed and are summarized.

Selenide Glass Optical Fiber Doped with $Pr^{3+}$ for U-Band Optical Amplifier

  • Chung, Woon-Jin;Seo, Hong-Seok;Park, Bong-Je;Ahn, Joon-Tae;Choi, Yong-Gyu
    • ETRI Journal
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    • v.27 no.4
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    • pp.411-417
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    • 2005
  • $Pr^{3+}-doped$ selenide glass optical fiber, which guarantees single-mode propagation of above at least 1310 nm, has been successfully fabricated using a Ge-Ga-Sb-Se glass system. Thermal properties such as glass transition temperature and viscosity of the glasses have been analyzed to find optimum conditions for fiber drawing. Attenuation loss incorporating the effects of an electronic band gap transition, Rayleigh scattering, and multiphonon absorption has also been theoretically estimated for the Ge-Ga-Sb-Se fiber. A conventional double crucible technique has been applied to fabricate the selenide fiber. The background loss of the fiber was estimated to be approximately 0.64 dB/m at 1650 nm, which can be considered fairly good. When excited at approximately 1470 nm, $Pr^{3+}-doped$ selenide fiber resulted in amplified spontaneous emission and saturation behavior with increasing pump power in a U-band wavelength range of 1625 to 1675 nm.

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Synthesis and Properties of Oligomers Containing 3-Triethylsilyl-1-silacyclopent-3-ene and Borane Derivatives via Polyaddition Reaction

  • Lee, Jung-Hwan;Park, Young-Tae
    • Bulletin of the Korean Chemical Society
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    • v.25 no.6
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    • pp.889-894
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    • 2004
  • Polyaddition reactions of 1,1-diethynyl-3-triethylsilyl-1-silacyclopent-3-ene with several organoborane derivatives have afforded the oligomeric materials containing organosilacyclic group and organoboron moiety along the oligomer main chains. All of these materials are soluble in THF as well as chloroform, and their molecular weights are in the range of 1,990/1,190-21,950/7,050 ($M_w/M_n$) with the polydispersity indexes of 1.67-3.43. The prepared oligomers are characterized by several spectroscopic methods such as $^1H,\;^{13}C, \;^{29}Si,\;^{11}B$ NMR and FTIR spectra along with elemental analysis. FTIR spectra of all the oligomers show that the new strong C=C stretching frequencies appear at 1599-1712 $cm^{-1}$, in particular. The UV-vis absorption spectra of the materials in THF solution exhibit the strong absorption bands at the ${\lambda}_{max}$ of 268-275 nm. The oligomeric materials show that the strong excitation peaks appear at the ${\lambda}_{max}$ of 255-279 nm and the strong fluorescence emission bands at the ${\lambda}_{max}$ of 306-370 nm. All the spectroscopic data suggest that the obtained materials contain both the organoboron ${\pi}$-conjugation moiety of C=C-B-C=C and the organosilacyclic group of 3-triethylsilyl-1-silacyclopent-3-ene along the oligomer main chains. The oligomers are thermally stable up to 162-200 $^{\circ}C$ under nitrogen.

Hot-filament 플라즈마화학기상증착법 이용한 패턴된 DLC층 위에 탄소나노튜브의 선택적 배열

  • Choe, Eun-Chang;Park, Yong-Seop;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.293-293
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    • 2010
  • Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, CNT based transistors, and bio-sensors. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC filmswere observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.

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Development of Conductive elastomer Roller for Image Forming High-Quality (고품질 화상형성을 위한 도전성 탄성체 롤러의 개발)

  • Jun, Ho-Ik;Cho, Hyun-Seob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.10
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    • pp.3923-3927
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    • 2010
  • Primary charging roller rotated with contacting surface of OPC drum and take charge OPC drum. Owing to this reason, primary charging roller is made by elasticity substance with electric conduction. Properties of charging and image is changed by class of coating, method of coating and environment. This study developed coating material and coating method to make Image Forming of High- quality.

Investigation of TaNx diffusion barrier properties using Plasma-Enhanced ALD for copper interconnection

  • Han, Dong-Seok;Mun, Dae-Yong;Gwon, Tae-Seok;Kim, Ung-Seon;Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.178-178
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    • 2010
  • With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

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The Synthesis and Electrochemical Performance of Microspherical Porous LiFePO4/C with High Tap Density

  • Cho, Min-Young;Park, Sun-Min;Kim, Kwang-Bum;Lee, Jae-Won;Roh, Kwang Chul
    • Journal of Electrochemical Science and Technology
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    • v.3 no.3
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    • pp.135-142
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    • 2012
  • Over the past few years, $LiFePO_4$ has been actively studied as a cathode material for lithium-ion batteries because of its advantageous properties such as high theoretical capacity, good cycle life, and high thermal stability. However, it does not have a very good power capability owing to the low lithium-ion diffusivity and poor electronic conductivity. Reduction in particle size of $LiFePO_4$ to the scale of nanometers has been found to dramatically enhance the above properties, according to many earlier reports. However, because of the intrinsically low tap density of nanomaterials, it is difficult to commercialize this method. Many studies are being carried out to improve the volumetric energy density of this material and many methods have been reported so far. This paper provides a brief summary of the synthesis methods and electrochemical performances of micro-spherical $LiFePO_4$ having high volumetric energy density.

A Study on the Development of Urine Analyzer System (뇨분석 시스템 개발에 관한 연구)

  • Lee, S.J.;Choi, B.C.;Kim, K.N.;Hong, S.I.;Kim, J.H.;Kim, J.H.;Jun, K.R.
    • Proceedings of the KOSOMBE Conference
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    • v.1997 no.05
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    • pp.303-308
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    • 1997
  • In this paper, we analyzed the spectroscopic properties of strip to analyzer urine qualitatively & quantitatively and make urine analyzer system stable by spectroscopy, and research the property of preamplifier unit. The analysis of spectroscopic properties of 10 pads in the strip is used for determine the wave length of light source of optic detector unit and used for basic materials which are necessary that we develop the algorithm analyzing the density grade of pad accurately. We make preamplifier unit by using the current to frequency method to measure the distribution of pad color. We implemented urine analyzer system. This system's hardware is composed of measuring unit for detect of distribution density of strip pad, main processing unit, communication unit, interface device, thermal printer, and indicator. The software consists of the program which manage the argument of test, proportion initial value of urine analyzer and calibrate analyzed result.

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Grignard Metathesis Polymerization and Properties of 1,1-Disubstituted-2,5-dibromo-3,4-diphenylsiloles

  • Park, Young Tae
    • Bulletin of the Korean Chemical Society
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    • v.35 no.6
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    • pp.1825-1831
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    • 2014
  • Grignard metathesis polymerizations of 1,1-disubstituted-2,5-dibromo-3,4-diphenylsiloles such as 1,1-dimethyl-2,5-dibromo-3,4-diphenylsilole, 1,1-diethyl-2,5-dibromo-3,4-diphenylsilole, 1,1-diisopropyl-2,5-dibromo-3,4-diphenylsilole, and 1,1-dihexyl-2,5-dibromo-3,4-diphenylsilole were performed to yield poly(1,1-disubstituted-3,4-diphenyl-2,5-silole)s containing fluorescent aromatic chromophore groups such as phenyl and silole in the polymer main chain: poly(1,1-dimethyl-3,4-diphenyl-2,5-silole), poly(1,1-diethyl-3,4-diphenyl-2,5-silole), poly(1,1-diisopropyl-3,4-diphenyl-2,5-silole), and poly(1,1-dihexyl-3,4-diphenyl-2,5-silole), respectively. The obtained materials are highly soluble in common organic solvents such as chloroform and tetrahydrofuran. Fourier-transform infrared spectra of all the polymers have characteristic C=C stretching frequencies at $1620-1628cm^{-1}$. The prepared organosilicon polymers exhibit strong absorption maximum peaks at 273-293 nm in the tetrahydrofuran solution, showing a red-shift of 18-34 nm relative to those of the monomer, strong excitation maximum peaks at 276-303 nm, and strong fluorescence emission maximum bands at 350-440 nm. Thermogravimetric analysis shows that most of the polymers are stable up to $200^{\circ}C$ with a weight loss of 6-16% in nitrogen.

Growth and characterization of the high quality ZnTe epilayers for opto-electronic devices (광전소자를 위한 고품질 ZnTe 단결정 박막의 성장과 특성)

  • 정양준;김대중;유영문;최용대
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.3
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    • pp.127-131
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    • 2003
  • High quality zincblende ZnTe(100) epilayers have been grown on semi-insulating $CaAs(100\pm2^{\circ})$substrate by hot-wall epitaxy. To grow high quality ZnTe epilayers, the growth temperature dependence of the surface topography, the growth rate, and the crystalline properties were investigated. From the photoluminescence measured at 10 K, the light hole and heavy hole free exciton emissions splitted by thermal tensile strain were observed and their first excited state emissions were also measured. The low temperature doublet of the heavy hole free exciton is because of the energy separation between longitudinal exciton and transverse exciton due to exciton-polariton coupling.