• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.506-511
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• 2009

For the application of the photosensitive barrier ribs with optimal properties such as glass transition temperature, refractive index and coefficient thermal expansion, the boro-silicate glasses was studied. The glass transition temperature, coefficient thermal expansion, and refractive index of the glasses based on the $B_2O_3-Al_2O_3-Al_2O_3-SiO_2$ glass system have been investigated with the different ratio of BaO/$Na_2O$ and $B_2O_3/Na_2O$. Increasing the ratio of $B_2O_3/Na_2O$ was led to the increase of coefficient thermal expansion and the decrease of glass transition temperature. The increase of refractive index of boro-silicate glasses increased with the density of glasses. We suggest the empirical equation for the prediction of refractive index with the glass density, $n=0.123{\rho}+1.182$ with 0.042 as the standard deviation in the boro-silicate glass system. The aim of the present paper is to give a basic result of the thermal and optical properties for designing the composition of photosensitive barrier ribs in PDP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.94-102
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• 1999

Ni/CGO cermets were fabricated as the anode for SOFC which uses CGO as the electrolyte. And their electrical conductivity, electrochemical reactivity, and thermal expansion coefficient were optimized through the variation of NiO/CGO particle size ration and their composition. The electrical conductivity of the cermet was increased abruptly at a certain Ni content and the percolation concentration was decreased with the decreasing particle size ratio. Anodic overpotential was also decreased with the decreasing particle size ratio. For a fixed ratio it showed a minimum value at 50 wt.%. Thermal expansion coefficient was increased monotonically with increasing Ni contents, however it did not depend on the size ratio. With three properties taken into account, the cermet of particle size ration of 0.03 and composition of 50 wt.% was judged to be optimal as the anode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.641-645
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• 2013

Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.128-134
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• 1996

In this study, the thermal and optical properties of multicomponent glass optical fiber by adding heavy metal oxide Ga$_2$O$_3$were investigated. The fiber samples were made by rod in tube method. The optical loss of fiber was measured in 0.3~1.8${\mu}{\textrm}{m}$ wavelength region. As Ga$_2$O$_3$increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495$^{\circ}C$ to 579$^{\circ}C$ and from 548$^{\circ}C$ to 641$^{\circ}C$respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1$\times$10$^{-7}$ $^{\circ}C$. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64${\mu}{\textrm}{m}$ to 6.1${\mu}{\textrm}{m}$. The optical loss of fiber was decreased and more remarkably decreased in 1.146${\mu}{\textrm}{m}$~1.8${\mu}{\textrm}{m}$ wavelength region.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.25-30
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• 2010

Si nanowire/multiwalled carbon nanotube nanocomposite arrays were synthesized. Vertically aligned Si nanowire arrays were fabricated by Ag nanodendrite-assisted wet chemical etching of n-type wafers using $HF/AgNO_3$ solution. The composite structure was synthesized by formation of a sheath of carbon multilayers on a Si nanowire template surface through a thermal CVD process under various conditions. The results of Raman spectroscopy, scanning electron microscopy, and high resolution transmission electron microcopy demonstrate that the obtained nanocomposite has a Si nanowire core/carbon nanotube shell structure. The remarkable feature of the proposed method is that the vertically aligned Si nanowire was encapsulated with a multiwalled carbon nanotube without metal catalysts, which is important for nanodevice fabrication. It can be expected that the introduction of Si nanowires into multiwalled carbon nanotubes may significantly alter their electronic and mechanical properties, and may even result in some unexpected material properties. The proposed method possesses great potential for fabricating other semiconductor/CNT nanocomposites.

• Electrical & Electronic Materials
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• v.6 no.1
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• pp.55-62
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• 1993

수소 관련된 species를 포함하지 않고 자기제한특성으로 초박막 성장을 용이하게 제어할 수 있는 N$_{2}$O 가스 분위기에서 실리콘의 산화는 질화된 산화막의 재산화공정 보다 훨씬 간단한 공정이다. N$_{2}$O산화로 형성된 Si-SiO$_{2}$ 계면에서 nitrogen-rich층은 산화막 구조를 강화할 뿐만 아니라 게이트 유전체의 질을 개선하고 산화율을 감소시키는 산화제의 확산 장벽으로 작용한다. 초박막 oxynitride 게이트 유전체가 종래의 열산화 방법으로 제작되었고 oxynitride막의 특성이 AES와 I-V 특성 측정의 결과를 분석하여 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.121-122
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• 2008

Blue emitting materials have been explored by various researchers. However, blue-emitting materials with high luminous efficiency, good color purity, and thermal stability are still much desired. In this study, we synthesized a new blue luminescent material, $SnDP(HPB)_2$ which is low molecular compound and thermal stability. The PL spectrum of $SnDP(HPB)_2$ was observed blue at the wavelength of 447nm. The ionization potential(IP) and the electron affinity(EA) of $SnDP(HPB)_2$ was measured to be 6.7 eV and 3.0 eV, respectively. The fundamental structure of the OLED was ITO/NPB/$SnDP(HPB)_2/Alq_3$/LiF/Al. As a Result, we obtained to enhance the performance of blue OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.175-178
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• 1995

Distribution of relaxation time is presented in the Cole-Cole arc diagram with frequency parameter. In the case of estimation of activation energy for main chains, maximum loss frequencies of ${\alpha}$ peaks, f$\sub$m/(${\alpha}$) display curved change according to the WLF type with variations of temperature. Structural change by the filling of filler and degradation by the thermal aging can be estimated from the WLF factors, C$_1$and C$_2$in Log f$\sub$m/-1/T curves which reflect the variations of free volume and thermal expansivity of composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.343-344
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• 2008

A surface micromachined uncooled microbolometer based on the amorphous silicon was designed, fabricated, and characterized. We designed the microbolometer with a pixel size of $44\times44{\mu}m^2$ and a fill factor of about 50 % ~ 70% by considering such important factors as the thermal conductance, thermal time constant, the temperature coefficient of resistance, and device resistance. Also, we successfully fabricated the microbolometer by using surface MEMS technology. Finally, we investigated responsivity and detectivity properties depends on the active area size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.