• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.1-6
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• 2008

A compact analytical model of the threshold voltage for long-channel Asymmetric Double-Gate(ADG) MOSFET is presented. In contrast to the previous models, channel doping and carrier quantization are taken into account. A more compact model is derived by utilizing the potential distribution linearity characteristic of silicon film at threshold. The accuracy of the model is verified by comparisons with numerical simulations for various silicon film thickness, channel doping concentration and oxide thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.664-667
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.678-686
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• 2002

This paper presents the effects of accumulation of surface charges on hydrophobic level and the changes of surface potential decay with various artificial environment treatments on high temperature vulcanized (HTV) silicone rubber used for outdoor insulating material. For this study, the charging apparatus by corona discharge, in which grid electrode was installed between the main corona and ground electrode, was used. From this study, it was found that the accumulation of surface charges above a critical surface potential on silicone insulating materials could lead to the temporary loss of surface hydrophobicity. In addition, corona stress and water absorption stress increase the decay rate of surface charges of HTV silicone rubber, while ultraviolet (UV) stress causes longer decay time. We could conclude that the effects of surface charges on hydrophobicity level and the changes of surface state by various artificial treatments were found through a trend of surface potential decay.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.103-106
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• 2000

The electronic properties of carbon nanotube are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in carbon nanotube for cabon nanoscale device is presented. To calculate the electronic properties of carbon nanotube, Empirical potential method (Brenner' hydrocarbon potential) for carbon and Tight binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6, 6) armchair carbon nanotube have the ranges between 0.3 eV and 2.5 eV. Also, our results were compared with the results of the other computational techniques. As that result, our results are very well united.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.348-348
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• 2008

In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.969-971
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• 2007

The black/white electronic ink containing high mobility white nano particles and the organic black pigment particles dispersed in dielectric fluid were prepared. A charge control agent affects the electrophoretic zeta potentials of white particle, which show the maximum value in zeta potential. The electronic ink panel fabricated with the charged white particles and the black particles exhibits more than 15:1 contrast ratio at 10V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.133-136
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• 1998

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. Here we report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films prepared by the Langmuir-Blodgett technique.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.17-21
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• 1998

The surface potential distribution on insulating polymers was measured by scanning of the probe of an electrostatic voltmeter. The measurements were done for two measured by scanning of the probe of an electrostatis voltmeter. The measurements were done for two cases. In the first case, it was measured on the free surface of insulating films which had been inserted between plane electodes after the removal of the upper brass disk electrode. In the second case, we measured the charging region between a circular and its opposing concentric ring electrodes after the removal of dc ramp voltage in air and nitrogen gas.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.160-162
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• 2016

A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1678-1684
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• 2008