• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.63-66
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• 2004

The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.706-708
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• 1999

In recent years, analog to digital converter is significant component in high frame rate system. But, in the future. as long as minimum line width is reduced, matching between speed and resolution may be worse. In this paper, first-order $\Sigma-\Delta$ analog to digital converter is adopted and designed as its solutions. Hspice simulation is performed, using $0.65{\mu}m$ CMOS 2-poly 2-metal model parameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.110-111
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• 2006

In this paper, we investigated resistance characteristic of chalcogenide material for next generation ReRAM nonvolatile memory device with laser irradiation. A AES is used to test Ag doping ratio into a As-Ge-Se-S thin film. A sample resistance was observed in real time with He-Ne laser(632.8nm). As a result, resistance of thermal treated As-Ge-Se-S thin film was $500{\Omega}$ which is smaller than initial $1.3M{\Omega}$. A resistance of non-treated Ag/As-Ge-Se-S thin film was $200{\Omega}$ which is lower than $35M{\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1138-1142
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• 2005

We achieved a highly efficient green OLED with an efficiency of 30cd/A by using a new electron transport material and optimizing the device structure. The luminous efficiency was 16.8lm/W at $3000cd/m^2$ and the lifetime was over 60,000hr at an initial luminance of $1000cd/m^2$. Furthermore, we obtained a threecomponent RGB white OLED by using the highly efficient green material. This RGB white OLED shows more excellent color reproducibility for full color displays with color filters, compared to a twocomponent white OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.268-271
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• 2004

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.19-20
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• 1989

The Orientation and distribution of stilbenes and azobenzenes in bilayer membranes are disoussed. The micropolarity that the organic molecules experience is rather polar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.485-490
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• 1998

No Abstract, See Full-Text

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.42-43
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• 2008

The numerous application of ceramic superconducting bulk such as magnetic levitation train flywheel energy, levitation transpormation, magnetic bulk magnet etc. To obtain YBaCuO materials in the form of large single crystals are necessary. A refreshment and uniform distributon of the superconducting particle in the sample. The enhancement of the critical density was ascribe to a fine dispersion of the superconducting particle.