• Title/Summary/Keyword: Electronic L/C

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Syntheses and structure refinement of $Ln_{x}MnO_{4}$ {Ln=Gd, Nd, Pr, Sm} ($Ca_{2-X}-Ln_{x}MnO_{4}$상의 합성과 결정구조 정밀화 {Ln=Gd, Nd, Pr, Sm})

  • 서상일;이재열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.726-729
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    • 2000
  • Though L $a_{1+x}$S $r_{2-x}$M $n_2$ $O_{7}$ n=2 R-P phases have been well known to have CMR effect, it was generally believed that n=1 phase was insulating. But recently monolayered perovskite $Ca_{2-x}$L $n_{x}$Mn $O_4$phase has been reported to show magnetoresistance. In this study, layered perovskite $Ca_{2-x}$L $n_{x}$Mn $O_4$ (x=0, 0.5, Ln=Pr, Nd, Sm, Gd) phases were synthesized by solid state reaction and their structures were refined by Rietveld method. The space groups of $Ca_2$Mn $O_4$, N $d_{0.5}$C $a_{1.5}$Mn $O_4$phases were refined as C2cb and Fmmm, respectively.y.ely.y.y.y.y.y.y.

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Electrical Characterization of La2Mo2O9-based Electrolytes at High Temperature (La2Mo2O9계 고체전해질의 고온 전기적 특성)

  • 박상현;유광수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.2
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    • pp.236-241
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    • 2004
  • New electrolytes of cubic L $a_2$M $o_2$-x Nbx $O_{9-}$$\delta$/(x=0, 0.05, 0.1, 0.2) were fabricated by a solid-state reaction method and their sintered densities were approximately 93% of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The at complex impedance were measured at 34$0^{\circ}C$ to 93$0^{\circ}C$ in air and fitted with a Solatron ZView program. Their impedance spectra showed big difference below and over the phase transition temperature (58$0^{\circ}C$). The electrical conductivity of L $a_2$M $o_2$ $O_{9}$ was 1.36${\times}$10$^{-2}$ S$cm^{-1}$ / at 817$^{\circ}C$. Comparing to undoped L $a_2$M $o_2$ $O_{9}$ , Nb-doped specimen showed the increase of electrical conductivity due to the aliovalent doping effect..

A study on the electrical characteristic of PZT ceramics with additive. (첨가제에 의한 PZT세라믹의 전기적 특성에 관한 연구)

  • 김현철;김진섭;김혁동;배선기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.236-239
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    • 1999
  • This paper is the study for electrical characteristic of PZT ceramics with Sb$_2$O$_3$, CoO additive. Effect of Sb$_2$O$_3$, CoO additive ranged from 0.0 wt% to 1.2wt% on the electrical characteristic of the PZT ceramics have been investigated. In the case of Sb$_2$O$_3$ 0.6wt%, the maximum vague of mechanical quality factor(Qm) was obtained 124.11 at l15$0^{\circ}C$. And, additive CoO 1.2wt% was obtained 184.12 at l15$0^{\circ}C$. The electromechanical coupling factor(kp) was increased by increasing the amount of Sb$_2$O$_3$, CoO additive. The maximum value of electromechanical coupling factor(kp) was obtained 58.35 with Sb$_2$O$_3$1.2wt% additive at l15$0^{\circ}C$. Dopped with additive CoO 0.9wt%, electromechanical coupling factor(kp) was obtained 47.84 at 115$0^{\circ}C$.

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A Study on the Electrical Properties of DLPC LB films (DLPC LB박막의 전계자격 응답특성)

  • Cho, S.Y.;Oh, J.H.;Lee, K.S.;Kim, H.J.;Kim, H.G.;Kim, B.C.
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.810-812
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    • 1998
  • We studied on the $\pi$-A isotherm of the L-$\alpha$-DLPC was measured at the air-water interface varying with the compressing speed and amounts of solutions for spreading. The molecular arrangement of deposited films were evaluated by measuring the absorption with the UVspectrometer. We made structures of metal(Au)/organic thin films (L-$\alpha$-DLPC)/Metal(Au), the number of accumulated layers are 3. And I-V characteristic of the device examined.

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Electrical Properties of the LDPE mixed with Dodecyl Alcohol (도데실알콜이 첨가된 LDPE의 전기적 특성)

  • Kim, S.J.;Lee, C.H.;Kim, J.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.110-113
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    • 1992
  • This paper presents the results on experiments of relative dielectric constant dielectric loss, conductivity change and breakdown voltage of the L.D.P.E. mixed with Dodecyl Alcohol. The frequency range is 0.1 - 20 MHz and temperature, 20 - 80 $^{\circ}C$. Dielectric properties were similar to those of nonpolar polymers. Until $60^{\circ}C$ the conductivity value of compound was decreased with temperature increasment. And, its breakdown voltage was measured higher, about 3-4KV, than that of the pure L.D.P.E.. Also the amount of remnants of DA in the compounds were considered.

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Tensile Strain Characteristics of Critical Current in YBCO Coated Conductors (YBCO CC테이프 임계전류의 인장변형률 특성)

  • Shin, Hyung-Seop;Kim, Ki-Hyun;Oh, Sang-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.274-275
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    • 2005
  • The tensile strain dependency of critical current in YBCO coated conductors was examined at 77K and in the self magnetic field. A commercially available YBCO sample with Cu stabilizer layer was supplied. There existed a peak in the relation between the Ie and tensile strain, and the reversible variation of $I_c$ with applied tensile strain was found. In the neutral axis Ni alloy RABiTS-$Y_2O_3$/YSZ/$CeO_2$ buffered YBCO tape, the $I_c$ recovered reversibly until the applied strain reached to about 0.5%, representing that a significant residual compressive strain induced during cooling to 77 K influenced the axial strain tolerance of YBCO conductors. To investigate the strain and stress influence on the $I_c$, the stress-strain characteristics of YBCO conductors measured at 77 K were discussed.

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A Study on Provisions and Precedents about Original Electronic Documents in UCP and eUCP (전자서류의 원본성에 대한 UCP 및 eUCP의 규정.판례에 관한 연구)

  • Jang, Heung-Hoon;Park, Bok-Jae
    • International Commerce and Information Review
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    • v.7 no.1
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    • pp.213-233
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    • 2005
  • A letter of credit is the best settlement among various means of payments until now. A letter of credit plays very important roles in rational and smooth international trade. Letter of credit is usually used in international trade. But many people have to prepare a lot of transport documents in order to transact with L/C. Therefore, the transactions will be happened to delay in international trade very often. Owing to the EDI, international trade will be materialized with electronic business of E-commerce. If we transact with the electronic documents, it will be reduced the time very much in international trade. Generally speaking, all relating parties transact with L/C complying with UCP, but there are no ruling articles about electronic documents in UCP. If all parties want to transact with electronic documents in global business, UCP has to contain the electronic provisions. So, ICC published eUCP on 2002. The purpose of the study was to analyze original electronic papers and provisions through foreign precedents in UCP and eUCP. If we want to exchange the electronic document, the UCP provisions about electronic documents would be revised as follows: UCP provision 20(b) would be revised, “Unless otherwise stipulated in the credit, banks have to accept as an original documents, a documents produced or appearing to have been produced: (i)by reprographic, automated or computerized systems (ii)as carbon copies,; provided that it is marked as original and, where necessary, appears to be signed. A document may be signed by handwriting, by facsimile signature, by perforated signature by symbol, or by any other mechanical or electronic method of authentication."

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Low resistivity Ohmic Co/Si/Co contacts to n-type 4H-SiC (낮은 접촉 저항을 갖는 Co/Si/co n형 4H-SiC의 오옴성 접합)

  • Kim, C.K.;Yang, S.J.;Lee, J.H.;Cho, N.I.;Jung, K.H.;Kim, N.K.;Kim, E.D.;Kim, D.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.764-768
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    • 2002
  • Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

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Implementation of a 3D Graphics Hardwired T&L Accelerator based on a SoC Platform for a Mobile System (SoC 플랫폼 기반 모바일용 3차원 그래픽 Hardwired T&L Accelerator 구현)

  • Lee, Kwang-Yeob;Koo, Yong-Seo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.9
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    • pp.59-70
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    • 2007
  • In this paper, we proposed an effective T&L(Transform & Lighting) Processor architecture for a real time 3D graphics acceleration SoC(System on a Chip) in a mobile system. We designed Floating point arithmetic IPs for a T&L processor. And we verified IPs using a SoC Platform. Designed T&L Processor consists of 24 bit floating point data format and 16 bit fixed point data format, and supports the pipeline keeping the balance between Transform process and Lighting process using a parallel computation of 3D graphics. The delay of pipeline processing only Transform operation is almost same as the delay processing both Transform operation and Lighting operation. Designed T&L Processor is implemented and verified using a SoC Platform. The T&L Processor operates at 80MHz frequency in Xilinx-Virtex4 FPGA. The processing speed is measured at the rate of 20M Vertexes/sec.

A Study on the ZVT PFC for Using 3[KW] Power Amplifier (Power Amp.용 3KW급 ZVT PFC 개발)

  • Lee, S.R.;Jeong, C.G.;Kim, S.W.;Ko, S.H.
    • Proceedings of the KIEE Conference
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    • 2000.07b
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    • pp.1306-1308
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    • 2000
  • A new ZVT PFC for using 3[KW] power amplifier is proposed. Generally, the single phase diode rectifier has been widely used in the SMPS of the conventional power amplifier. But this rectifier has occurred some problems which are the input power factor and current harmonics. To solve the above problems, in this paper, two topology is adopted. The one is the boost type PFC for improving the input power factor. The other is the ZVT resonant circuit for reducing the switching loss and stress. In this paper, the proposed topology is analyze designed to built the ZVT PFC for using 3[KW] power amplifier. In order to verify the circuit va finally, the PSPICE simulation and experiment results are presented.

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