• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.7-11
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• 2001

We measured the electron transport coefficients, the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_{L}$, over the E/N range from 0.03 to 100 Td and gas pressure range from 0.133 to 122 kPa in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures by the double shutter drift tube with variable drift distance. And we calculated these electron transport coefficients by using multi-term approximation of Boltzmann equation analysis. We determined the electron collision cross sections set for $C_{3}F_{8}$ molecule by the comparison of measurement and calculation. Our special attention in the present study was focused upon the inelastic collision cross sections of the $C_{3}F_{8}$ molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.21-24
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• 2000

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.1
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• pp.61-68
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• 2017

In this paper, the coarse acquisition code (C/A code), for civil navigation, of the ranging codes for Global Positioning System (GPS) is studied, simulated and analyzed by using Matlab. We can see with the simulation results that the correctness of the method and feasibility, which is at simulation platform to further study on the real environment of GPS signal, can be confirmed. With using this results, we think, the complexity of tracking the satellite signal environment can be captured, and the performance of satellite receiver will be improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.301-306
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• 2006

The electron drift velocity W and the product of the longitudinal diffusion coefficient and the gas number density $ND_{L}$ in the $0.525\;\%$ and $5.05\;\%$ $C_{3}F_8-Ar$ mixtures were measured by using the double shutter drift tube with variable drift distance over the E/N range from 0.03 to 100 Td and gas pressure range from 1 to 915 torr. And we determined the electron collision cross sections set for the $C_{3}F_8$ molecule by STEP 1 of electron swarm method using a multi-term Boltzmann equation analysis. Our special attention in the present study was focused upon the vibrational excitation and new excitations cross sections of the $C_{3}F_8$ molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.298-301
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• 1997

This paper describes the thermally stimulated current(TSC) measurements arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 250$^{\circ}C$ and the temperature was increased at a rate of 0.02 $^{\circ}C$/s linearly[4]. It shows that peaks of TSC are observed at about 80$^{\circ}C$ in the arachidic acid and about 80$^{\circ}C$, 160$^{\circ}C$ in the PAAS LB films. The DSC and TGA of PAAS, arachidic acid are measure. Monolayer phases on the water subphase such as Langmuir(L) films and the phase transitions from gas phase to solid phase via liquid phase are observed using Brewster angle microscopy(BAM). BAM is also used to observe the Langemuir-Blodgett(LB) films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.934-941
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• 2000

We measured the electron transport coefficients, the electron drift velocity W and the longitudinal diffusion coefficient $D_{L}$ in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures over the E/N range from 0.01 Td to 100 Td by the double shutter drift tube, and compared the measured results by Hunter et al. with those. We determined the inelastic collision cross sections for the $C_{3}F_{8}$ molecule by the comparison of the present measurements and the calculation of electron transport coefficients in the $C_{3}F_{8}$-Ar mixtures by using a multi-term Boltzmann equation analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.141-149
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• 1997

L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders were prepared by both GNP(Glycine-Nitrate Process) and solid state reaction method in various of calcination temperature(800-1000.deg. C) and time in air. Also, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contacts on YSZ(Yttria-Stabilized Zirconia) substrate were prepared by screen printing and sintering method as a function of sintering temperature(1100-1450.deg. C) in air. Sintering behaviors have been investigated by SEM(Scanning Electron Microscope) and porosity measurement. Compositional and structural characterization were carried out by X-ray diffractometer and ICP AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) analysis. Electrical characterization was carried out by the electrical conductivity with linear 4 point probe method. As the calcination period increased in solid state reaction method, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ phase increased. Although L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ single phase was obtained only for 48hrs at 1000.deg. C, in GNP method it was easy to get single and ultra-fine L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders with submicron particle size at 650.deg. C for 30min. The particle size and thickness of L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contact by solid state reaction method did not change during the heat treatment, while those by GNP method showed good sintering characteristics because initial powder size fabricated from GNP method is smaller than that fabricated from solid state reaction method. Based on enthalpy change from thermodynamic data and ICP-AES analysis, it was suggested to make cathode contact in composition of (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$ Mn $O_{3}$ which have little second phase (L $a_{2}$Z $r_{2}$ $O_{7}$) for high efficient solid oxide fuel cells applications. As (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$Mn $O_{3}$ cathode contact on YSZ substrate was sintering at 1250.deg. C the temperature that liquid phase sintering did not occur. It was possible to obtain proper cathode contacts with electrical conductivity of 150(S/cm) and porosity content of 30-40%.m) and porosity content of 30-40%.

• International Commerce and Information Review
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• v.15 no.1
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• pp.357-379
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• 2013

Recently, the government was introduced as currency for earning of raw materials purchasing system for electronic Government management of foreign trade in 2011, and revised regulations for electronic proof of purchase. In addition, the currency for earning of raw materials, such as procurement system in 2012, followed by electronic proof of purchase local letter of credit. The government electronic trading will be promoting local trading of electronic procedures. This study will be a preceding research on the goods control system for acquiring foreign currency and the obligation of using digitalized approval of purchase due to the revision of foreign trade law. Also, it will conduct theoretical and legal research regarding the obligation of digital establishment of the local L/C which is a result of amendments to the rules of operation for the Bank of Korea's trade finance. Further, it will analyze the legal and operational problems and its response plans for the establishment of the local trade integrated management system which promotes the digitalization of the local trade process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.