• Journal of the Korean Society of Radiology
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• v.15 no.1
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• pp.79-83
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• 2021

In radiation therapy, electron beam is often used in the treatment of superficial lesion. Accurate measurements are required because electron beam interacts with them in the beam path and affects dose measurements. However, no research has been conducted on electron beam quality assurance. in this study, PbO-based dosimeter was fabricated as a basic study for electron beam quality assurance. Thus, the reproducibility and linearity of the energy of 6, 9, and 12 MeV were analyzed to evaluate measurement accuracy and precision. Reproducibility measurements show RSD value of 1.024%, 1.019% and 0.890%, respectively, at 6, 9, and 12 MeV. linearity measurements show 0.9999 R2 at 6, 9, and 12 MeV altogether. Both evaluations show that the PbO dosimeter has very good measurement accuracy and precision with excellent results.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.182-192
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• 2003

A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

• Journal of Radiation Industry
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• v.8 no.1
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• pp.53-57
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• 2014

The kenaf is quickly developing as a renewable resource. Kenaf can be grown under a wide range of weather conditions. Modification of kenaf fiber by graft polymerization provides a significant route to alter the chemical properties, including surface hydrophilicity or hydrophobicity. In this study, kenaf fiber surfaces were grafted with acrylic acid as a hydrophilic group using electron beam irradiation. The grafting rate increased with an increase in grafting time. The FT-IR results confirmed that acrylic acid was successfully grafted onto the kenaf fibers. The wettability of the kenaf fiber was increased, accompanied by acylic acid grafting on the fiber surface. According to the permeability test result, it was found that acrylic acid grafted kenaf fiber reinforced cement composite was more reduced than non-grafted kenaf fiber reinforced cement composite.

• Polymer(Korea)
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• v.36 no.1
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• pp.47-52
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• 2012

Abstract: In this study, PAN/$TiO_2$ fiber mats were fabricated from polyacrylonitrile (PAN) and titanium(IV) butoxide ($Ti(OBu)_4$) by an electrospinning method with various solution concentrations, applied voltages and solution flow rates. The fiber mats were irradiated with an electron beam to induce structural crosslinking and enhance photocatalytic activity. As a result, uniform and bead-free fibers without pits or cracks on surface were obtained at 5 wt% of $Ti(OBu)_4$ solution with 15 kV and 0.02 mL/min flow rate. The PAN/$TiO_2$ fiber mats were irradiated with an electron beam of 1.14 MeV acceleration voltage, 4 mA of current and $1{\times}10^4kGy$. Electron beam irradiation was enhanced the photocatalytic activity of PAN/$TiO_2$ nano fiber mat. The photocatalytic activity of the PAN/$TiO_2$ fiber mat was analyzed by degradation of methylene blue and volatile organic compounds.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.389-390
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• 2005

• Radiation Oncology Journal
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• v.7 no.1
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• pp.93-100
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• 1989

Several combinations of measuring devices and phantoms were studied to measure electron beams. Silicon Pmt junction diode was used to find the dependence of depth dose profile on field size on axis of electron beam Depths of 50, 80 and $90\%$ doses increased with the field size for small fields. For some larger fields, they were nearly constant. The smallest of field sizes over which the parameters were constant was enlarged with increase of the energy of electron beams. Depth dose distributions on axis of electron beam of $10\times10cm^2$ field were studied with several combinations of measuring devices and phantoms. Cylindrical ion chamber could not be used for measurement of surface dose, and was not convenient for measurement of near surface region of 6MeV electron. With some exceptions, parameters agreed well with those studied by different devices and phantoms. Surface dose in some energies showed $4\%$ difference between maximum and minimum. For 18MeV, depths of 80 and $90\%$ doses were considerably shallower by film than by others. Parallel-plate ion chamber with polystyrene phamtom and silicon PN junction would be recommended for measurement of central axis depth dose of electron beams with considerably large field size. It is desirable not to use cylindrical ion chamber for the purpose of measurement of surface dose or near surface region for lower energy electron beam. It is questionable that film would be recommended for measurement of dose distribution of electron with high energy like as 18MeV.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.199-205
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• 2010

The electrical properties and defect states in ZnO substrates were studied during high-energy electron beam irradiations. 1 MeV and 2 MeV electron-beam with dose of $1{\times}10^{16}$ electrons/$cm^2$ were irradiated on Zn-surface of the sample. In the sample irradiated by 1 MeV, the leakage current was increased by electron-beam induced surface defects, while the enhancement of on/off property and the decrease of leakage current appeared in the 2 MeV irradiated sample. From the deep level transient spectroscopy measurements for these samples, it showed that the defect states with the activation energies of $E_c$-0.33 eV and $E_v$+0.8 eV are generated during the high energy electron-beam irradiation. Especially, it considered that the $E_c$-0.33 eV state related with O-vacancy affects to their electrical properties.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.792-796
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• 2001

For electron beam lithography and SEM(scanning electron microscopy) applications, miniaturized electrostatic lenses called a microcolumn have been fabricated. In this paper, we report the fabrication technique for 20~30$\mu\textrm{m}$ apertures of electron lenses based on silicon and Mo membrane using an active Q-switched Nd:YAG laser. Experimental conditions of laser micromachining for silicon and Mo membrane are improved. The geometrical structures, such as the diameter and the preciseness of the micron-size aperture are dependent upon the total energy of the laser pulse train, laser pulse width, and the diameter of laser spot.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.193-197
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• 2023

Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In₂O₂ (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10^-3 Ω^-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10^-2 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.

• Progress in Superconductivity and Cryogenics
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• v.24 no.1
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• pp.18-22
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• 2022

The effect of electron beam (EB) irradiation on superconducting properties and microstructures of MgB₂ bulk superconductors were investigated. At E-beam doses of 1×10¹⁶ e/cm² and 1×10¹⁷ e/cm², the effect of irradiation on a superconducting transition temperature (T_c) of MgB₂ was weak. As a dose increases to 5×10¹⁷ e/cm², T_c decreases by 0.5 K. The critical current density (J_c) measured at 4.2 K and 20 K, and 0 T - 5 T increases slightly as exposure time increases. X-ray diffraction for the irradiation surface of MgB₂ shows that the diffraction intensity of (hkl) peaks decreases proportionally as the exposure time increases. This indicates that the crystallinity of MgB₂ was degraded by irradiation. TEM investigation for the irradiated sample showed distorted lattice structure, which is consistent with the XRD results. The J_c increase and T_c reduction of MgB₂ by irradiation are believed to be caused by the lattice distortion.