• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2299-2302
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• 2009

By controlling the number of electrons transferred to the emitting layer, highly efficient three-wavelength WOLEDs were fabricated. Such WOLEDs are different from those made using simple stacking of RGB emitting layers in that the movement distribution of electrons transferred to emitting layer could be adjusted using the difference in LUMO energy level and that lights of all 3 wavelengths could be emitted through appropriate arrangement of RGB emitting layers. WOLED device with the structure of m-MTDTA (40 nm)/NPB (10 nm)/ Coumarin6 doped $Alq_3$ (3%) (8 nm)/ Rubrene doped NPB (5%) (15 nm)/NPB (2 nm)/ DPVBi (20 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) showed high luminance efficiency of 8.9 cd/A and color purity of (0.31, 0.40). In addition, WOLED device with the thickness of non-doped NPB layer increased from 2 nm to 3 nm to increase blue light emission showed a luminance efficiency of 7.6 cd/A and color purity of (0.28, 0.36).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.48-56
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• 2000

Effects of the correlated random fluctuation in each grating half-period have been studied by an effective index transfer matrix method in quarter wavelength shifted DFB lasers. As the correlation coefficient changes from 0 to -1, single mode stability and wavelength accuracy are less degraded by the reduced error in the grating period. This fact shows that holographic grating fabrication is better than electron-beam lithography in discrete device fabrication provided that the magnitude of the random fluctuation is the same.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.624-628
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• 2006

In this study, divalent europium-activated $NaCaPO_4$ green phosphor powders were prepared by the chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescent properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer for the first time. The effects of Ca/P and Na/Ca mole ratios on the final products were also investigated. The influences of input amount change of europium as the activator on the light emission intensity were studied, and the resulting concentration quenching phenomenon was observed. The optimized synthesis conditions obtained in this study were Ca/P mole ratio 1.2, Na/Ca mole ratio 3.0 and 4 mole%Eu. The peak wavelength was 505 nm for all the samples. The result of excitation spectrum measurement indicated that the excitation efficiency was high for the long-wavelength UV region. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

• Current Applied Physics
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• v.18 no.11
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.900-904
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• 2011

We have synthesized core-shell structured nanocrystals based on chalcopyrite-type $Cu_{0.2}InS_2$. The photoluminescence of the nanocrystals shows a significant blueshift in the emission wavelength by shell capping with ZnS layers. This shift can be explained with the compressive stress to core nanocrystals applied by the formation of a ZnS shell layer with a large lattice mismatch with the core. In this study, the emission wavelength could be tuned by changing the composition of the shell layers. Nanocrystals with emission wavelength ranging from 575 nm through 630 nm were synthesized by varying the portion of cadmium compared with zinc in the shell layers.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.70-74
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• 2004

We investigated transmittance, surface characteristics, and resistivity according to bending of ITO(indium tin oxide) film with four other multi -harrier film). Transmission data of ITO film with four ITO films showed there was about large 90％ transmission above 550nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75％ transmission above 550nm wavelength. And, surface images measured from SEM (scanning electron microscope) showed both-side hard coated structure have a tendency of more roughness. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoated structure. Subsequently, with result of resistivity change according to position, we knew the resistivity change of the center increased rapidly than that of the edge.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.127-130
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• 2005

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy and electroluminescence measurements. As the quantum well growth time was changed, the wavelength was varied from 451 to 531 nm. In the varied current conditions, the blue LED with the InN MQW structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN MQW structures do not show the color temperature changes with the variations of applied currents.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.264-267
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• 2007

It is important to reduce optical losses from front surface reflection to improve the efficiency of crystalline silicon solar cells. Surface texturing by isotropic etching with acid solution based on HF and $HNO_3$ is one of the promising methods that can reduce surface reflectance. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its various grain orientations. In this paper, we textured multicrystalline silicon wafers by simple wet chemical etching using acid solution to reduce front surface reflectance. After that, surface morphology of textured wafer was observed by Scanning Electron Microscope(SEM) and Atomic Force Microscope(AFM), surface reflectance was measured in wavelength from 400nm to 1000nm. We obtained 29.29% surface reflectance by isotropic texturing with acid solution in wavelength from 400nm to 1000nm for fabrication of multicrystalline silicon solar cells.