• 한국재료학회지
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• 제21권4호
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• pp.212-215
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• 2011

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

• 한국세라믹학회지
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• 제39권2호
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• pp.210-215
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• 2002

본 연구에서는 $CO_2$ 흡수단이 있는 4.3${\mu}m$ 파장대역의 광학 필터를 전자빔 증발 장치를 이용하여 Ge와 $SiO_2$ 박막을 다층으로 설계, 제작하였다. 제작된 Ge/$SiO_2$ 다층박막 필터는 기준파장에 대하여 반가폭(FWHM) 204nm, 투과율 58.2%, 금지대역에 대하여 5% 이하의 차단특성을 나타내는 협대역 투과필터 (narrow band-pass filter: BPF)특성을 나타내었다. 광학적 대역투과필터를 사용하여, FT-IR내에 감지실을 설치하여 단식 필터(KBr+BPF)와 복식필터(BPF+BPF)의 $CO_2$ 농도별 감도특성을 비교측정 하였다. 측정시 $CO_2$의 농도는 500ppm을 단위로 500∼5000ppm의 범위까지 관찰하였는데, 복식 필터는 단식 필터에 비해 투과율이 낮았지만, 우수한 감도 특성을 보였다.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2743-2750
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• 2011

Lanthanide(III)-cored complex as a wavelength conversion material has been successfully designed and synthesized for highly efficient dye-sensitized solar cells, for the first time, since light with a short wavelength has not been effectively used for generating electric power owing to the limited absorption of these DSSCs in the UV region. A black dye (BD) was chosen and used as a sensitizer, because BD has a relatively weak light absorption at shorter wavelengths. The overall conversion efficiency of the BD/WCM device was remarkably increased, even with the relatively small amount of WCM added to the device. The enhancement in $V_{oc}$ by WCM, like DCA, could be correlated with the suppression of electron recombination between the injected electrons and $I_3{^-}$ ions. Furthermore, the short-circuit current density was significantly increased by WCM with a strong UV light-harvesting effect. The energy transfer from the Eu(III)-cored complex to the $TiO_2$ film occurred via the dye, so the number of electrons injected into the $TiO_2$ surface increased, i.e., the short-circuit current density was increased. As a result, BD/WCM-sensitized solar cells exhibit superior device performance with the enhanced conversion efficiency by a factor of 1.22 under AM 1.5 sunlight: The photovoltaic performance of the BD/WCM-based DSSC exhibited remarkably high values, $J_{sc}$ of 17.72 mA/$cm^2$, $V_{oc}$ of 720 mV, and a conversion efficiency of 9.28% at 100 mW $cm^{-2}$, compared to a standard DSSC with $J_{sc}$ of 15.53 mA/$cm^2$, $V_{oc}$ of 689 mV, and a conversion efficiency of 7.58% at 100 mW $cm^{-2}$. Therefore, the Eu(III)-cored complex is a promising candidate as a new wavelength conversion coadsorbent for highly efficient dye-sensitized solar cells to improve UV light harvesting through energy transfer processes. The abstract should be a single paragraph which summaries the content of the article.

• 센서학회지
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• 제15권3호
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• pp.186-191
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• 2006

In general, Cerenkov light is produced by a charged particle that passes through a medium with a velocity greater than that of visible light. Although the wavelength of Cerenkov light is very broad, the peak is in the almost visible range from 400 to 480 nm. Therefore, it always causes a problem to detect a real light signal that is generated in the scintillator on the fiber-optic sensor tip for dose measurements of high-energy electron beam. The objectives of this study are to measure, characterize and remove Cerenkov light generated in a fiber-optic radiation sensor tip to detect a real light signal from the scintillator. In this study, the intensity of Cerenkov light is measured and characterized as a function of incident angle of electron beam from a LINAC, and as a function of the energy of electron beam. As a measuring device, a photodiode-amplifier system is used, and a subtraction method using a background optical fiber is investigated to remove Cerenkov light.

• 전기학회논문지
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• 제64권3호
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• pp.422-428
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• 2015

A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.

• 공업화학
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• 제23권6호
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• pp.539-545
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• 2012

전자를 끌어당기는 benzotriazole을 vinylene으로 thiophene과 연결한 3-(2-benzo-triazolovinyl)thiophene (BVT)을 합성하고, FT-IR 및 $^1H$-NMR, $^{13}C$-NMR, 2D hetero-cosy spectra로 구조분석을 하였다. 합성한 BVT와 3-octylthiophene (OT)을 공중합 하였다. 공중합체들은 수평균 분자량 12000 (PDI 2.67)과 15000 (PDI 2.55)을 나타내었으며, THF, TCE와 chloroform 등의 유기용매에 잘 용해되었다. 공중합체들의 BVT와 OT의 공중합된 비율은 $^1H$-NMR spectra에 의하여 BVT : OT = 1 : 1.8과 1 : 2.8 (mol/mol)로 확인되었다. 파장 470 nm와 465 nm에서 UV-vis 최대 흡수를 나타내었고, photoluminescence (PL)는 각각 ${\lambda}_{max}$ = 662 nm와 641 nm로 나타나 적색계로 관찰되었다. 공중합체의 band gap은 각각 1.96 eV, 2.02 eV로 poly(3-octylthiophene)보다 더 증가하였다. 또한, poly(3-octylthiophene)에 비해서 HOMO 에너지 준위는 모두 낮아졌으나, LUMO 에너지 준위는 모두 높아졌다.

• 한국자기학회지
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• 제25권5호
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• pp.149-155
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• 2015

자성박막의 미세패턴 소자 제작을 위해 전자 사이크로트론 공명(electron cyclotron resonance; ECR) Ar 이온밀링 시스템을 제작하였다. 소자 식각에 적용한 ECR 이온밀링 시스템에서 주파수 2.45 GHz 파장 12.24 cm의 마이크로파 소스인 마그네트론은 전력 600 W에 의해 가동되어 파장의 정수배에 맞추어 만든 도파관을 통하여 전달되도록 설계하였다. 마이크로파 주파수와 공명시키기 위해 전자석으로 908 G의 자기장을 인가하였고, 알곤 개스를 cavity에 유입시켜서 방전된 이온들은 그리드 사이에 인가한 약 1000 V의 가속전압에 의한 에너지를 갖고 표면을 밀링한다. 이것을 이용하여 다층구조 GMR-SV(giant magnetoresistance-spin valve) 자성박막에 광 리소그래피, 이온밀링 및 전극제작 공정과정을 마치고 폭이 $1{\mu}m$에서 $9{\mu}m$까지의 소자들을 제작하여 광학현미경으로 소자 크기를 관찰하였다.

• 한국지반환경공학회 논문집
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• 제20권11호
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• pp.5-10
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• 2019

본 연구에서는 장파장에서 감응하는 광촉매를 개발하기 위하여 상용화된 $TiO_2$에 Ag를 도핑하여 제조하였으며 광촉매 효율을 향상시키기 위하여 귀금속의 분산을 증대시키는 마이크로에멀젼 방법을 이용하였다. 제조된 $Ag/TiO_2$의 물리적 특성은 SEM(Scanning Electron Microscopy), FE-TEM(Field Emission Transmission Electron Microscopy), DRS(Diffuse Reflectance Spectroscopy)를 통해 분석하였다. RO 16(Reactive Orange 16)에 대한 광촉매의 제거 효율은 25ppm의 RO 16을 대상으로 UV-A 영역(365nm)에서 수행하였다. Ag의 도핑방법에 의한 광촉매 효율을 비교하기 위해 볼밀링 및 딥코팅 방법으로 제조하여 광촉매 효율을 분석하였으며 광촉매 효율에 대한 Ag 및 계면활성제 함량에 대한 최적화를 진행하였다. 도핑방법에 따른 RO 16 제거효율 분석 결과, 마이크로에멀젼 방법으로 제조한 $Ag/TiO_2$의 RO 16 제거효율이 가장 높았으며 Ag 함량 2wt%, 계면활성제 0.5g에서 가장 높은 제거효율을 보였다.

• 대한금속재료학회지
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• 제46권10호
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• pp.683-690
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• 2008

In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.