• Applied Microscopy
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• v.33 no.3
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• pp.179-185
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• 2003

The operating accelerating voltage in the electron microscopy may differ from the nominal voltage specified by the manufacture. Thus it is necessary, at least once, to determine the wavelength of electron beam for the nominal accelerating voltage. Particularly in QCBED technique, the wavelength of the incident electron beam on a specimen must be determined as accurately as possible. In this paper we present a simple method to determine accurately the wavelength of electrons from LACBED patterns of a known crystalline materials, which is analogous to a method based on Kikuchi patterns reported previously. This method is to utilize three diffraction lines not belonging to the same zone, which nearly intersect at the same point. For an application of the method, the wavelength of electrons for the 200 kv nominal acceleration voltage of JEM2010 is determined to be 0.002496(3) nm ($201.5{\pm}0.4$ kv) with an uncertainty of 0.12%.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.10
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• pp.1009-1015
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• 2013

Ultra-short laser pulses are effective, when high requirements concerning accuracy, surface roughness and heat affected zone are demanded for surface structuring. In particular, picosecond laser systems that are suited to be operated in industrial environments are of great interest for many practical applications. This paper focused on inducing optimum process parameters for higher volume ablation rate by analyzing a relationship between crater diameter and optical spot size. In detail, the dependency of the volume ablation rate, penetration depth and threshold fluence on the pulse duration 8 ps and wavelength of 515 nm was discussed. The experimental results showed that wavelength of 515 nm resulted in less threshold fluence ($0.075J/cm^2$) on copper than IR wavelength ($0.3J/cm^2$). As a result, it was possible that optimum fluence for higher volume ablation rate was achieved with $0.28J/cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.525-525
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• 2013

Low temperature plasma diagnosis is one of the big issues in laboratory scale or processing industry. One of the most powerful techniques of plasma diagnostics is the use of the scattering of electromagnetic radiation from the plasma. Electron temperature and density are important parameters for understanding the information of plasmas in the plasma processing industry. Laser scattering experiments on plasma can provide a substantial amount of information about plasma parameters such as the electron density ne, the electron temperature Te, and the neutral density nn and temperature Tn. Thomson scattering spectroscopy is used several method, in accordance with detector type. Commonly, Thomson scattering is used several notch filter to separate expanded wavelength. Since using a spectrometer with surface relief grating or notch filter, the system of the measurement will be complicated and bigger. In this study, using VPHG (Volume Phase Holographic Grating) in order to install the simple and cheap system. VPHG has the advantage of the system installation, because it can be Transmission Type. The diffraction efficiency and dispersion angle of VPHG is higher than the surface relief grating relatively. For a wavelength and bandwidth selection, Using a slit or mask to select a rejection wavelength instead of notch filter.

• Bulletin of the Korean Chemical Society
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• v.25 no.6
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• pp.801-805
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• 2004

In this work, the fundamental study of on-line monitoring of $SiO_2$ particles in the size range of 40 nm to 725 nm was carried out using turbidimetry. The size of particle was measured using a field emission scanning electron microscope (FE-SEM). The factors affecting on the turbidity were discussed, for example, wavelength, size, and concentration. In order to observe the dependence of turbidity on the wavelength, a turbidimetric system equipped with charged coupled detector (CCD) was built. The shape of the transmitted peak was changed and the peak maximum was shifted to the red when the concentration of particle was increased. This result indicates that the turbidity is related to the wavelength, which corresponds to the characteristic of the Mie extinction coefficient, Q, that is a function of not only particle diameter and refractive index but also wavelength. It is clear that a linear calibration curve for each particle in different size can be obtained at an optimized wavelength.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.44-44
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• 2003

Free electron lasers (FEL) have, at least, the following advantages in comparison to conventional lasers： FEL can be designed for any arbitrary given emission wavelength. It is continuously tunable within wide band. Easy to get single-mode emission. Easily controlled emission structure (pulse duration, repetition rate, and pulse energy). (omitted)

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.29-37
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• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.5
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• pp.363-369
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• 2016

We explored localized plasmonic field enhancements using nanowire patterns to improve the sensitivity of a surface plasmon resonance (SPR) sensor. Two different materials, gold and silver, were considered for sample materials. Gold and silver nanowire patterns were fabricated by electron beam lithography for experimental measurements. The wavelength SPR sensor was also designed for these experiments. The material-dependent field enhancements on nanowire patterns were first calculated based on Maxwell's equations. Resonance wavelength shifts were indicated as changes in the refractive index from 1.33 to 1.36. The SPR sensor with silver nanowire patterns showed a much larger resonance wavelength shift than the sensor with gold nanowire patterns, in good agreement with simulation results. These results suggest that silver nanowire patterns are more efficient than gold nanowire patterns, and could be used for sensitivity enhancements in situations where biocompatibility is not a consideration.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.200-205
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• 1995

The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.1-166.1
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• 2014

We have controlled the graphene surface in two ways to improve the device performance of optoelectronics based on graphene transparent conductive films. We controlled multilayer graphene (MLG) work function and localized surface plasmon resonance wavelength using a silver nanoparticles formed on graphene surface. Graphene substrates were prepared using a chemical vapor deposition and transfer process. Various size of silver nanoparticles were prepared using a thermal evaporator and post annealing process on graphene surface. Silver nanoparticles were confirmed by using scanning electron microscopy (SEM). Work functions of graphene surface with various sizes of Ag nanoparticles were measured using ultraviolet photoelectron spectroscopy (UPS). The result shows that the work functions of MLG could be controlled from 4.39 eV to 4.55 eV by coating different amounts of silver nanoparticles while minimal changes in the sheet resistance and transmittance. Also the Localized surface plasmon resonance (LSPR) wavelength was investigated according to various sizes of silver nanoparticles. LSPR wavelength was measured using the absorbance spectrum, and we confirmed that the resonance wavelength could be controlled from 396nm to 425nm according to the size of silver nanoparticles on graphene surface. To confirm improvement of the device performance, we fabricated the organic solar cell based on MLG electrode. The results show that the work function and plasmon resonance wavelength could be controlled to improve the performance of optoelectronics device.