• 한국응용과학기술학회지
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• 제30권1호
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• pp.49-56
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• 2013

Excellent electron transport properties with enhanced light scattering ability for light harvesting have made well-ordered one dimensional $TiO_2$ nanotube(TNT) arrays an alternative candidate over $TiO_2$ nanoparticles in the area of solar energy conversion applications. The principal drawback of TNT arrays being activated only by UV light has been addressed by coupling the TNT with secondary materials which are visible light-triggered. As well as extending the absorption region of sunlight, the introduction of these foreign components is also found to influence the charge separation and electron lifetime of TNT. In this study, a novel method to fabricate the TNT-based composite photoelectrodes employing visible responsive $CuInS_2$ (CIS) nanoparticles is presented. The developed method is a square wave pulse-assisted electrochemical deposition approach to wrap the inner and outer walls of a TNT array with CIS nanoparticles. Instead of coating as a dense compact layer of CIS by a conventional non-pulsed-electrochemical deposition method, the nanoparticles pack relatively loosely to form a rough surface which increases the surface area of the composite and results in a higher degree of light scattering within the tubular channels and hence a greater chance of absorption. The excellence coverage of CIS on the tubular $TiO_2$ allows the construction of an effective heterojunction that exhibits enhanced photoelectrochemical performance.

• 멤브레인
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• 제18권1호
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• pp.75-83
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• 2008

본 연구에서는 Polyethylene (PE, Asahi) 이차전지용 막의 표면불소화를 통해 기계적 강도 및 열적 안정성과 고출력에서의 안정성을 높이기 위한 연구를 실시하였다. 전자주사현미경(scanning electron microscope, SEM), 접촉각(contact angle)을 통하여 불소가스 노출시간에 따른 막의 표면과 구조의 변화를 관찰하고, 인장강도와 표면 친수성 실험을 통하여 막의 기계적 물성을 확인하였다. 제조된 막의 전기화학적 특성을 확인하기 위하여 충/방전 실험, 수명특성. 고율방전시험을 실시하여 고출력에서 온도에 대한 안정성이 향상되었음을 확인하였다.

• Korean Chemical Engineering Research
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• 제51권5호
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• pp.540-544
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• 2013

고분자전해질연료전지(PEMFC)는 시동/정지과정에서 성능과 수명이 감소한다. 본 연구에서는 캐소드가스로 산소를 사용하는 데드엔드 형 PEMFC의 시동/정지 과정의 영향을 분극곡선, 임피던스(EIS), SEM과 TEM을 사용해 연구하였다. 시동/정지 과정에서 PEMFC 성능감소를 막기 위해서는 더미 로드를 사용해야 함을 보였다. 시동/정지 반복과정 중 50% 상대습도(RH)에서 캐소드 카본지지체의 부식에 의한 열화가 100% RH보다 심했다. 데드엔드 형 PEMFC의 정지과정에서 PEMFC에 물을 공급해줌으로써 50% RH에서 열화속도를 감소시켰다.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.315-326
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• 2010

This study examined the overlapping resonances in the systems involving 1 open and 2 closed channels using the phase-shifted version of multichannel quantum-defect theory (MQDT). The results showed that 21 patterns for the q reversals in the autoionization spectra are possible depending on the relative arrangements of the two simple poles and roots of the quadratic equations. Complete cases could be generated easily using the q zero planes determined using only 3 asymmetric spectral line profile indices. The transition of the spectra of the coarse interloper Rydberg series from the lines into a structured continuum by being dispersed onto the entire Rydberg series was found. The overall behavior of the time delays was found to be governed by the dense Rydberg series, which is quite different from the one of the autoionization cross sections that is governed by an interloper, indicating that different dynamics prevail for them. This is in contrast to the two channel system where both quantities behave similarly. The dynamics obtained in the presence of overlapping resonances is as follows. The absorption process is instant and dominated by a transition to the interloper line. This process is followed by rapid leakage into the dense Rydberg series, which has a longer residence time before ionization than that of the interloper state. This is because the orbiting period is proportional to $\upsilon^3$ so that an excited electron has a shorter lifetime in the interloper state belonging to a lower member of the Rydberg series.

• 한국재료학회지
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• 제28권6호
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• pp.337-342
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• 2018

Using a high pressure homonizer, we report on the electrochemical performance of $Li_4Ti_5O_{12}(LTO)$ particles manufactured as anode active material for lithium ion battery. High-pressure synthesis processing is performed under conditions in which the mole fraction of Li/Ti is 0.9, the synthesis pressure is 2,000 bar and the numbers of passings-through are 5, 7 and 10. The observed X-ray diffraction patterns show that pure LTO is manufactured when the number of passings-through is 10. It is found from scanning electron microscopy analysis that the average size of synthesized particles decreases as the number of passings-through increases. $LiCoO_2-based$ active cathode materials are used to fabricate several coin half/full cells and their battery characteristics such as lifetime, rate capability and charge transfer resistance are then estimated, revealing quite good electrochemical performance of the LTO particles as an effective anode active material for lithium secondary batteries.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.93-93
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• 2009

실리콘 태양전지의 효율 향상을 위한 노력의 일환으로 결정질 실리콘 웨이퍼 표면passivation 물질 중 Atomic Layer Deposition (ALD)을 이용하여 증착한 $Al_2O_3$ 박막에 대한 관심이 증가하고 있다. 본 연구에서는 $Al_2O_3$ 박막의 증착 전 실리콘 웨이퍼의 산화막 두께에 따른 passivation 효과에 대해서 연구하였다. 실리콘 산화막은 $HNO_3$ 용액을 사용하여 화학적으로 생성시켰으며 $HNO_3$ 용액과의 반응 시간을 조절하여 실리콘 산화막의 두께를 조절하였다. 실리콘 산화막 생성 후 ALD로 $Al_2O_3$ 박막을 증착하였으며 증착 후 $N_2$ 분위기에서 annealing 하였다. Annealing 후 passivation 효과는 Quasi-Steady-State Photo Conductance를 사용하여 minority carrier의 lifetime을 측정하였다. Capacitance-Voltage measurement, Transmission Electron Microscopy, Ellipsometry를 사용하여 실리콘 산화막의 두께에 따른 $Al_2O_3$ 박막의 passivation 효과를 분석하였다.

• 한국재료학회지
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• 제12권6호
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• 한국신뢰성학회지:신뢰성응용연구
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• 제13권4호
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• pp.299-307
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• 2013

The value of blood sugar is measured by a personal blood glucose meter which consists of two parts: a glucose strip and a blood glucose meter. A personal blood glucose meter makes use of electric media which are composed of glucose oxidase and electron. This study is to propose a method of reliability demonstration test derived from field data analysis and FMEA(Failure Mode and Effect Analysis). Detailed Conditions for reliability demonstration test are selected from the comparison of various failure mechanisms. The most dominant failure mechanism is wear-out which is caused by strip insertion/extraction. The testing device that can reproduce the failure mechanism of strip insertion/extraction is made to conduct reliability demonstration test. Using the testing device, it is confirmed that target lifetime of selected devices is more than 2 years.