• 제목/요약/키워드: Electron hole recombination

검색결과 105건 처리시간 0.028초

2차원 소자 시뮬레이터를 이용한 비정질 셀레늄(a-Se) 분석 (Study of The Amorphous Selenium (a-Se) using 2-dimensional Device Simulator)

  • 김시형;김창만;남기창;김상희;송광섭
    • 전자공학회논문지
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    • 제49권10호
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    • pp.187-193
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    • 2012
  • 디지털 X-ray 영상 디텍터는 의료용 및 산업용으로 널리 이용되고 있다. 직접방식(direct method)의 디지털 X-ray 영상 디텍터는 X-ray 에너지를 전기적 신호로 변환하기 위하여 광도전체(photoconductor)를 이용하며 일반적으로 비정질 셀레늄(a-Se)을 사용하고 있다. 본 연구는 비정질 셀레늄 표면에 파장 486 nm의 전자방사선을 조사할 경우 내부에서 일어나는 물리적 현상들을 분석하기 위하여 2차원 소자 시뮬레이터을 이용하였다. 시뮬레이션 결과를 통해 비정질 셀레늄 내부 전자-정공 생성율, 전자-정공 재결합율, 전자/정공 분포에 대한 분석을 수행하였다. 사용된 시뮬레이터는 디바이스 내부를 삼각형으로 나누어 보간법을 사용하여 계산하는 방식이다. 본 시뮬레이션 방법은 직접방식 디지털 X-ray 영상 디텍터 분석을 위하여 처음으로 제안되었고 유용한 방법이다. 이러한 2차원 소자 시뮬레이터를 이용한 연구방법은 향후 디지털 방사선 영상 디텍터 개발에 많이 응용될 것으로 예상된다.

염료폐수 분해를 위한 가시광 감응형 Pt-C-TiO2 광촉매의 합성 (Synthesis of Visible-working Pt-C-TiO2 Photocatalyst for the Degradation of Dye Wastewater)

  • 한미선;윤창연;이종협
    • 청정기술
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    • 제11권3호
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    • pp.123-128
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    • 2005
  • $TiO_2$는 금속 산화물의 일종으로서 자체가 가지고 있는 물리화학적 안정성, 무독성, 탁월한 유기물의 산화분해력 등으로 인해 저농도의 환경 유해물질 정화 분야로 응용이 활발히 연구되고 있는 반도체 물질이다. 그러나 $TiO_2$는 자외선 영역대(${\lambda}$ < 387 nm, 태양광의 2.7%가 UV)의 빛을 통해서 활성을 나타내고, 여기된 전자의 빠른 전자-정공 재결합속도로 인해 광 효율이 저하되는 단점을 갖는다. 따라서 광 감응 파장대를 넓히고 재결합속도를 길게 함으로써 광효율을 높이고, 광촉매 활성을 증대하는 방향으로 연구의 초점이 모아지고 있는 실정이다. 본 연구에서는 $TiO_2$ 광촉매의 광 감응 파장대를 가시광선 영역으로 확대함과 동시에 여기된 전자와 정공의 재결합시간을 연장하기 위하여 백금(Pt)이 광침적(photodeposition)된 탄소(C) 도핑 $TiO_2$를 제조하였다. 제조한 $Pt-C-TiO_2$의 특성은 전자투과현미경(Transmission Electron Microscopic; TEM), 질소흡탈착법(Brunauer-Emmett-Teller method; BET), X-ray 회절 분석법(X-ray Diffractometer; XRD), 분광 산란 광도계(UV-visible diffuse reflectance spectroscopy; UV-Vis DRS), X-ray 광전자 광도계(X-ray Photoelectron Spectroscopy; XPS)를 통하여 살펴보았다. $Pt-C-TiO_2$의 광촉매 활성을 검증하기 위하여 아조 계열의 붉은색 염료인 Acid Red 44 ($C_{10}H_7N=NC_{10}H_3(SO_3Na)_2OH$)의 광분해 실험을 수행하였다. 광원은 Xe arc 램프(300 W, Oriel)를 사용하였으며 420 nm 이하 제거 필터를 사용하여 가시광 영역대의 빛만을 조사되도록 하였다. 그 결과, 제조한 $Pt-C-TiO_2$는 가시광선 하에서 사용제품과 비교하여 월등히 뛰어난 분해력을 보이며 $C-TiO_2$의 활성을 한 층 더 향상시킴을 확인하였다. 이는 무한 에너지 자원인 태양광을 이용한 염료 폐수 정화 시스템 응용으로의 유용한 결과라 할 수 있겠다.

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Mg가 첨가된 GaN 박막에서 캐리어 전이의 열적도움과 전계유도된 터러링 현상 (Thermally Assisted Carrier Transfer and Field-induced Tunneling in a Mg-doped GaN Thin Film)

  • 정상근;김윤겸;신현길
    • 한국재료학회지
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    • 제12권6호
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    • pp.431-435
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    • 2002
  • The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

DCM 계열을 이용한 OLED의 전기적인 발광 특성에 관한 연구 (Light Emitting Characteristics of Multi-layer OLEO Fabricated with DCM)

  • 전민호;윤석원;임성택;신동명
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.57-60
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    • 2002
  • In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

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PbS/ZnO/TiO2 나노복합체의 광촉매 특성 (Photocatalytic Characteristics of PbS/ZnO/TiO2 Nanotube Composite)

  • 이종호;허수정;윤정일;김영직;김인기;장경욱;오한준
    • 한국재료학회지
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    • 제27권10호
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    • pp.569-575
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    • 2017
  • To improve photocatalytic performance, a $PbS/ZnO/TiO_2$ nanotube catalyst was synthesized, and its surface characteristics and photocatalytic efficiency were investigated. The hybrid photocatalysts were produced by anodic oxidation and successive ionic layer adsorption and reaction(SILAR). The photocatalytic efficiency was evaluated using the dye degradation rate. The $PbS/ZnO/TiO_2$ photocatalyst significantly enhanced the photocatalytic activity for dye degradation, which was ascribed to the synergistic effect of their better absorption of solar light and a decrease in the rate of excited electron-hole recombination.

Photonic Crystal Effect of Nano-Patterned PEDOT:PSS Layer and Its Application to Absorption Enhancement of ZnPc Thin Films

  • Han, Ji-Young;Ryu, Il-Whan;Park, Da-Som;Kwon, Hye-Min;Yim, Sang-Gyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.252-252
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    • 2012
  • It is widely accepted that short exciton diffusion lengths of organic semiconductors with respect to the film thickness limit the charge (hole and electron) separation before excitons recombination in organic photovoltaic (OPV) cells. Therefore the efficient absorption of incident light within the thin active organic layer is of great importance to improve the power conversion efficiency (PCE) of the cells. In this work, we fabricated 2-dimensionally (2D) nano-patterned poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOST:PSS) layers using capillary phenomenon and nano-imprinting technology at the scale of several hundred nanometers. This 2D nano-patterned PEDOT:PSS layer exerted photonic crystal effect such as redirection of light paths and variation of light intensity at specified wavelengths. It is also expected that the consequently alternated light pass lengths and intensities change the absorption properties of zinc phthalocyanine (ZnPc) thin films grown on top of the nano-patterned PEDOT:PSS layer. The influence of conductivity and thickness of the PEDOT:PSS layer on the absorption properties of ZnPc thin films were also investigated.

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Copper oxide/n-Si 전극의 광전기화학 변환 특성과 안정성에 미치는 Pt 층의 영향 (Effect of Pt Layers on the Photoelectrochemical Properties and Stability of a Copper Oxide/n-Si Electrode)

  • 윤기현;홍석건;강동헌
    • 한국세라믹학회지
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    • 제37권3호
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    • pp.263-270
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    • 2000
  • The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

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Experimental Evidence of the Mobility of Hydroperoxyl/Superoxide Anion Radicals from the Illuminated TiO2 Interface into the Aqueous Phase

  • Kwon, Bum-Gun;Yoon, Je-Yong
    • Bulletin of the Korean Chemical Society
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    • 제30권3호
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    • pp.667-670
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    • 2009
  • The understanding of behaviors of hydroperoxyl/superoxide anion radicals (${H_2O_2}^./{O_2}^{-.}$) generated from a photoirradiated $TiO_2$ surface is essential to improve the efficiency of $TiO_2$ photocatalytic reactions by decreasing the recombination of photoinduced electron-hole ($e^--h^+$) pairs. In contrast with previous studies, we found that ${H_2O_2}^./{O_2}^{-.}$ generated on the surface of illuminated $TiO_2$ particles are mobile. ${H_2O_2}^./{O_2}^{-.}$ formed by the photocatalysis of $TiO_2$ particles immobilized onto the inner surface of a coil-quartz tube were forced under a continuous flow through a knotted tubing reactor (KTR) and into the aqueous phase completely separated from the $TiO_2$ particles, and were measured by a chemiluminescence (CL) technique using 2-methyl-6-(p-methoxyphenyl)-3,7-dihydroimidazo[ 1,2-a]pyrazin-3-one (MCLA) as the reagent. The initial concentration of the ${H_2O_2}^./{O_2}^{-.}$ stream entering the KTR was determined by its half-life (98 s) at pH 5.8. We suggests that the efficiency of $TiO_2$ photocatalytic reactions may be further improved by utilizing the mobility of ${H_2O_2}^./{O_2}^{-.}$.

Diffusion Currents in the Amorphous Structure of Zinc Tin Oxide and Crystallinity-Dependent Electrical Characteristics

  • Oh, Teresa
    • Transactions on Electrical and Electronic Materials
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    • 제18권4호
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    • pp.225-228
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    • 2017
  • In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

열처리된 Znq2에 기초한 유기 EL소자의 발광특성 (Luminance Characteristics of Organic Electroluminescent Devices Based on Znq12 by Heating)

  • 조성렬;정은실;박수길;정평진
    • 한국재료학회지
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    • 제9권6호
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    • pp.564-568
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    • 1999
  • The 8-hydroxyquinoline Zinc(Znq2) were prepared successfully from zinc chloride and zinc acetate as two kinds of starting material. The organic electroluminescent devices(ELDs) were fabricated by the structure of ITO/TPD/Znq2/Al with N-N'-diphenyl-N-N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) which acts hole trasporting layer and bis(8-oxyquinolino) zinc(II)(Znq2) which acts as emission and electron transporting layer. EL efficiency of Znq2 prepared by heating was investigated. The 570nm of main emission peak which is yellowich green was investigated by photo luminesence(PL) and this results shows that electro luminescence(EL) is from Znq2. The V-J curve shows that carrier injection were investigated from 4V. Maximum luminance and luminance efficiency were 1600cd/$\m^2$, 0.9lm/W. From this results, the Znq2 can be one of the useful organic EL material.

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