• Title/Summary/Keyword: Electron contamination

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Microbiological and Sensory Characteristics of Electron Beam Irradiated Squid Jeotkal and Its Ingredients (전자선 조사 양념 오징어 젓갈 및 부재료의 미생물학적 및 관능적 특성)

  • Kim, Bin-Na;Jung, Samooel;Choe, Jun-Ho;Liu, Xian De;Jo, Cheo-Run
    • Korean Journal of Agricultural Science
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    • v.35 no.2
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    • pp.155-165
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    • 2008
  • A seasoned squid Jeotkal, Korean traditional fermented seafood, and its ingredients for manufacturing, including red hot pepper powder, ground garlic, sesame seeds, were irradiated with 0, 0.5, 1, 2, and 5 kGy by electron beam and stored at $4^{\circ}C$ for 4 weeks to determine the changes in microbiological and sensory characteristics. The initial contamination of squid Jeotkal such as total aerobic bacteria, yeast & mold, and coliform bacteria were at the levels of 2.88, 3.04, and 4.20 log CFU/g, respectively. However, electron beam irradiation with does at 5 kGy reduced the total aerobic bacteria to about 1 log CFU/g. Yeast & mold and coliform bacteria were reduced to 1-2 log CFU/g after 2 kGy of irradiation and reached to undetected level when the sample was irradiated at 5 kGy and following storage at $4^{\circ}C$ for 4 weeks. Sensory characteristics showed that electron beam irradiation of up to 5 kGy did not adversely affect overall acceptability of squid Jeotkal and its ingredients during cold storage. Therefore, electron beam irradiation is one of the possible means to improve storage stability of seasoned squid jeotkal, which has limited alternative sterilization methods due to the temperature characteristics of the products.

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Design study of the Vacuum system for RAON accelerator using MonteCarlo method

  • Kim, Jae-Hong;Jeon, Dong-O
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.70.1-70.1
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    • 2015
  • The facility for RAON superconducting heavy-ion accelerator at a beam power of up to 400 kW will be produced rare isotopes with two electron cyclotron resonance (ECR) ion sources. Highly charged ions generated by the ECR ion source will be injected to a superconducting LINAC to accelerate them up to 200 MeV/u. During the acceleration of the heavy ions, a good vacuum system is required to avoid beam loss due to interaction with residual gases. Therefore ultra-high vacuum (UHV) is required to (i) limit beam losses, (ii) keep the radiation induced within safe levels, and (iii) prevent contamination of superconducting cavities by residual gas. In this work, a RAON vacuum design for all the accelerator system will be presented along with Monte Carlo simulation of vacuum levels in order to validate the vacuum hardware configuration, which is needed to meet the baseline requirements.

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Surface Analysis of Aluminum Bonding Pads in Flash Memory Multichip Packaging

  • Son, Dong Ju;Hong, Sang Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.221-225
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    • 2014
  • Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

Color Nanotube Field Emission Displays for HDTV

  • Dean, K.A.;Coll, B.F.;Dinsmore, A.;Howard, E.;Hupp, M.;Johnson, S.V.;Johnson, M.R.;Jordan, D.C.;Li, H.;Marshbanks, L.;McMurtry, T.;Tisinger, L.Hilt;Wieck, S.;Baker, J.;Dauksher, W. J.;Smith, S.M.;Wei, Y.;Weston, D.;Young, S.R.;Jaskie, J.E.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1003-1007
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    • 2005
  • We demonstrate color video displays driven by carbon nanotube electron field emitters. These nanotubes are incorporated into the device by selective growth using low temperature chemical vapor deposition. The device structure is simple and inexpensive to fabricate, and a 45 V switching voltage enables the use of low cost driver electronics. The prototype units are sealed 4.6” diagonal displays with 726 um pixels. They represent a piece of a 42” diagonal 1280x720 high definition television. The carbon nanotube growth process is performed as the last processing step and creates nanotubes ready for field emission. No activation post-processing steps are required, so chemical and particulate contamination is not introduced. Control of the nanotube dimension, orientation, and spatial distribution during growth enables uniform, highquality, color video performance.

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Growth of GaN on ZnO Substrate by Hydride Vapor-Phase Epitaxy (ZnO 기판 위에 Hydride Vapor-Phase Epitaxy법에 의한 GaN의 성장)

  • Jo, Seong-Ryong;Kim, Seon-Tae
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.304-307
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    • 2002
  • A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

Structural Studies of Thin Film Boron Nitride by X-ray Photoelectron Spectroscopy

  • Kim, Jong-Seong
    • Journal of Sensor Science and Technology
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    • v.5 no.1
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    • pp.51-56
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    • 1996
  • Structural properties of rf sputtered boron nitride films were studied as a function of deposition parameters such as nitrogen pressure, substrate temperature and substrate bias using X-ray photoelectron spectroscopy and Auger electron spectroscopy. Composition and information on chemical bonding of resultant films was determined by XPS. XPS core level spectra showed that ratio of boron to nitrogen varied from 3.11 to 1.45 with respect to partial nitrogen pressure. Curve fitting of XPS spectra revealed three kinds of bonding mechanism of boron in the films. XPS peak positions of both B 1s and N 1s shifted to higher energy with higher nitrogen pressure as well as increase in substrate bias voltage. AES was used to see possible contamination of films by carbon or oxygen as well.

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Helium/Oxygen Atmospheric Pressure Plasma Treatment on Poly(ethylene terephthalate) and Poly(trimethylene terephthalate) Knitted Fabrics: Comparison of Low-stress Mechanical/Surface Chemical Properties

  • Hwang Yoon Joong;McCord Marian G.;Kang Bok Choon
    • Fibers and Polymers
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    • v.6 no.2
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    • pp.113-120
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    • 2005
  • Helium-oxygen plasma treatments were conducted to modify poly(trimethylene terephthalate) (PIT) and poly(ethylene terephthalate) (PET) warp knitted fabrics under atmospheric pressure. Lubricant and contamination removals by plasma etching effect were examined by weight loss $(\%)$ measurements and scanning electron microscopy (SEM) analysis. Surface oxidation by plasma treatments was revealed by x-ray photoelectron spectroscopy (XPS) analyses, resulting in formation of hydrophilic groups and moisture regain $(\%)$ enhancement. Low-stress mechanical properties (evaluated by Kawabata evaluation system) and bulk properties (air permeability and bust strength) were enhanced by plasma treatment. Increasing interfiber and interyarn frictions might play important roles in enhancing surface property changes by plasma etching effect, and then changing low-stress mechanical properties and bulk properties for both fabrics.

High Luminous Efficacy and Low Driving Voltage PDP with SrO-MgO Double Protective Layer

  • Whang, Ki-Woong;Jung, Hae-Yoon;Lee, Tae-Ho;Cheong, Hee-Woon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.173-176
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    • 2009
  • We suggest a new protective layer for PDP consists of SrO and MgO double layer. This double layer structure protects SrO layer from the contamination by $H_2O$ or $CO_2$ in the air and enable SrO to play as the main cathode material. It was confirmed that the high secondary electron emission characteristics of SrO by Xe ion can bring considerable driving voltage reduction and improvement of luminance and luminous efficacy in PDP.

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Molecular Genetic and Histological Analysis for the Excavated Human Bone (출토 인골의 분자유전학 및 조직학적 분석연구)

  • Jee, Sang-hyun;Park, Ji-hee;Seo, Min-seok;Hong, Jong-ouk;Chung, Yong-jae
    • 보존과학연구
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    • s.28
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    • pp.75-90
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    • 2007
  • The ancient biomolecular remains are the potential source for paleobiology and paleoanthropology. Especially, ancient human specimens such as bone, teeth, and hair are powerful materials to identify historical origin and migration of ancestor population from the past. However, most excavated human specimens in archaeological sites have commonly problems as natural damage and exogenous contamination. We carried out histological and molecular analyses of excavated bone from the historic sites in South Korea from the recently discovered in tumulus of Seochun and Naju. Biological deterioration of bone was observed anatomically by optical and scanning electron microscope (SEM). We extracted degraded DNA, and amplified hyper variable region (HVR) of mitochondrial DNA (mtDNA) and amelogenin of nucleus DNA. This study applied and examined the relationships between histological preservation and DNA survival in excavated bone.

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A Study on the High Selective Oxide Etching using Inductively Coupled Plasma Source (유도결합형 플라즈마원을 이용한 고선택비 산화막 식각에 관한 연구)

  • 이수부;박헌건;이석현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.261-266
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    • 1998
  • In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

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