• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.108-108
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• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• 한국진공학회지
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• 제10권2호
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• pp.257-261
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• 2001

InGaAs/GaAs 초격자 구조들 사이에 InAs/GaAs 양자점을 MBE로 성장하고 광특성을 측정한 결과 매우 균일한 양자점을 얻을 수 있었다. Self-consistent한 이론 계산으로부터 얻은 p-i-n 구조의 최적 조건으로 단일광자구조를 성장하고 단일광자소자를 e-beam lithography를 이용하여 제작하였다. 전기적 특성인 I-V곡선에서 나타난 전기 이력현상으로부터 단일 전자와 단일 정공이 다른 전압에서 투과하여 단일 전자-정공 재결합 현상이 나타나고 있음을 확인하였다.

• 한국재료학회지
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• 제14권3호
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• pp.186-190
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• 2004

An electron beam microcolumn composed of an electron emitter, micro lenses, scan deflector, and focus lenses have been fabricated and tested in the STEM mode. In this paper, we report a technique of precisely aligning the electron lenses by the laser diffraction patterns instead of the conventional alignment method based on aligner and STM. STEM images of a standard Cu-grid were observed using a fabricated microcolumn under both the retarding and accelerating modes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제22회 학술발표회 초록집
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• pp.208-208
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• 2002

• Progress in Superconductivity
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• 제10권2호
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• ETRI Journal
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• 제29권6호
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• pp.814-816
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• 2007

Conventional lithography methods of gold patterning are based on deposition and lift-off or deposition and etching. In this letter, we demonstrate a novel method of gold patterning using spin-coatable gold electron-beam resist which is functionalized gold nanocrystals with amine ligands. Amine-stabilized gold electron beam resist exhibits good sensitivity, 3.0 mC/$cm^2$, compared to that of thiol-stabilized gold electron beam resists. The proposed method reduces the number of processing steps and provides greater freedom in the patterning of complex nanostructures.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.14-17
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• 2006

A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

• 한국재료학회지
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• 제5권1호
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• pp.96-103
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• 1995

30KV 전자빔리소그래피 장치를 사용하여 PMMA 3000$\AA$/P(MMA/MAA) 6000$\AA$의 이중구조에서 foot width 0.1$\mu$m이하, head width 0.4$\mu$m의 T-gate를 형성하였다. PMMA/P(MMA/MAA)/GaAS 구조에 대한 Monte Carlo 시뮬레이션 결과, 산란반경 0.1$\mu$m에서 전방산란전자와 후방산란전자의 에너지 비는 19.5:1로 나타났다. 전자빔리소그래피 공정에 필요한 PMMA 및 P(MMA/MMA)의 열처리 조건, 설게 선폭에 대한 패턴감도를 구하였다. MIBK : IPA = 1 : 1 현상액에 대한 PMMA 및 P(MMA/MAA)의 감마값(gamma value)은 2.3이었다. 광 및 전자빔리소그래피 장치의 혼합사용(mix-and-match) 결과 층간정렬도 (alignment accuracy)는 0.1$\mu$m(3$\sigma$) 이하를 얻었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1073-1077
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• 2003

This study aims to investigate the fabrication process of nano silicon mold using electron beam lithography (EBL) to generate the nanometer level patterns by nano-imprinting technology. the nano-patterned mold including 100mm pattern size has been fabricated by EBL with different doses ranged from 22 to 38 ${\mu}C/cm^2$ on silicon using the conventional polymethylmetharcylate(PMMA) resist. The silicon mold is fabricated with various patterns such as circles, rectangles, crosses, oblique lines and mixed forms, The effect of dosage on pattern density in EBL is discussed based on SEM (Scannning Electron Microscopy) analysis of fabricated molds. The mold surface is modified by hydrophobic fluorocarbon (FC) thin films to avoid the stiction during nano-imprinting process.

• 전자공학회논문지A
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• 제31A권1호
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• pp.61-64
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• 1994

The NMOSFET with gate length of 0.1$\mu$m is fabricated by mix-and-match method. In this device, the electron beam lithography is used to form the gate layer, while other layers are formed by the stepper. The gate oxide is 7nm thick, and the device structure is normal LDD structure. The saturation Gm for gate length of 0.1$\mu$m is 246mS/mm. The subthreshold slope is 180mV/decade for 0.1$\mu$m gate length, but the slope is 80mV/decade for 0.3$\mu$m gate length.