• Current Applied Physics
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• v.18 no.11
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• pp.1255-1260
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• 2018

In this work, a green and simple one-pot route was developed for the synthesis of highly fluorescent aminofunctionalized graphene quantum dots (a-GQDs) via hydrothermal process without any further modification or surface passivation. We synthesized the a-GQDs using glucose as the carbon source and ammonium as a functionalizing agent without the use of a strong acid, oxidant, or other toxic chemical reagent. The as-obtained aGQDs have a uniform size of 3-4 nm, high contents of amino groups, and show a bright green emission with high quantum yield of 32.8%. Furthermore, the a-GQDs show effective fluorescence quenching for $Cu^{2+}$ ions which can serve as effective fluorescent probe for the detection of $Cu^{2+}$. The fluorescent probe using the obtained aGQDs exhibits high sensitivity and selectivity toward $Cu^{2+}$ with the limit of detection as low as 5.6 nM. The mechanism of the $Cu^{2+}$ induced fluorescence quenching of a-GQDs can be attributed to the electron transfer by the formation of metal complex between $Cu^{2+}$ and the amino groups on the surface of a-GQDs. These results suggest great potential for the simple and green synthesis of functionalized GQDs and a practical sensing platform for $Cu^{2+}$ detection in environmental and biological applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.63-70
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• 1989

The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.144-149
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• 2003

Carbon tips were grown on Si cantilevers by applying an electron beam to them directly with Scanning Electron Microscope. A carbon tip was fabricated by aligning the electron beam directly down the vertical axis of Si cantilever and then irradiating a single spot on the cantilever for a proper time in the dominant atmosphere of residual gases generated by the oil of the diffusion pump. A number of control parameters for SEM, including exposure time, acceleration voltage, emission current, and beam probe current, were allowed to make various aspect ratio feature. The growth of carbon tips was not affected by the surface morphology of substrates. We could acquired the tip whose effective length is 0.5 $\mu\textrm{m}$, bottom diameter is 90 nm and cone half angle $3.5^{\circ}$ The growth technique of the high aspect ratio carbon tips on the tip-free cantilevers is available to reduce the complexities of fabricating sub-micron scale tips on the PZT thin film actuator integrated AFM cantilevers.

• Journal of Surface Science and Engineering
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• v.42 no.3
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• pp.133-138
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• 2009

Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.

• Journal of the Mineralogical Society of Korea
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• v.15 no.2
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• pp.122-131
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• 2002

Muscovite, chlorite and biotite in metapelites of the Ogcheon Hetamorphic Belt are studied using electron probe microanalysis (EPMA), backscattered electron images (BEI) of scanning electron microscopy (SEM) and lattice fringe images of transmission electron microscopy (TEM). These minerals are observed to be intergrown under a polarized light microscope and are apparently interlayered below EPMA resolution; EPMA data often indicate mixtures of phyllosilicates such as muscovite/chlorite (M/C), biotite/chlorite (B/C), muscovite/pyrophyllite/chlorite (M/P/C). biotite/pyrophyllite/chlorite (B/P/C) or biotite/muscovite/chlorite (B/M/C). BEI observations show that the three minerals (muscovite, chlorite and biotite) are mixed at various scales in a grain through the garnet zone, and the interlayering of the three minerals are observed from TEM lattice fringe images and selected area electron diffraction patterns. The result of TEM observations reveals that 7-$\AA$ layers (serpentine, precursor of chlorite) are interlayered within 10-$\AA$ layers (muscovite) at 100~200 $\AA$ scale as well as M/C in the chlorite zone. The 7-$\AA$ layers become smaller in size and less frequent in the biotite tone, and 10-$\AA$ layers are interlayered with chlorite (14 $\AA$) at an individual layer scale. The 7-$\AA$ layers are no longer observed in the garnet zone, and 10-$\AA$ layers (biotite) are interlayered with chlorite (B/C) at 50~100 $\AA$ scale. Relatively large scale (1000~2000 $\AA$) of intergrowth is also frequently observed from the garnet zone samples. However, rocks from all three metamorphic zones show interlayering of a few units of 7-, 10- and 14-$\AA$ layers with each other at TEM observations. The result of this study implies that metamorphic minerals such as muscovite, chlorite and biotite form through disequilibrum mineral reactions resulting in inhomogenious phases.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.2 no.2
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• pp.125-133
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• 2004

Fission products of DUPIC (Direct Use of Spent PWR Fuel in CANDU Reactors) fuel, irradiated in HANARO research reactor with 61 ㎾/m of maximum linear power and 1,770 ㎿d/tU of average burn-up, was characterized by EPMA(Electron Probe Micro Analyzer). In order to find accurate characterization, the analysis results by EPMA of fresh simulated DUPIC fuel containing fission products as chemicals were compared with that of wet chemical analysis. The metallic precipitates observed at the center of the fresh simulated DUPIC fuel were about 1 $\mu\textrm{m}$ in size and their major components by EPMA were Mo-53.89 at.%, Ru-37.40 at.%, and Pd+Rh-8.71 at.%. Established procedure through the fresh simulated DUPIC fuel was applied to the irradiated DUPIC fuel. Observed size of metallic precipitates were 2∼2.5 $\mu\textrm{m}$ and their compositions were Mo-47.34 at.%, Ru-46 at.%, and Pd+Rh-6.65 at.%. What are uncommon things for this experiment, special treatment for improving the conductivity was attempted to the specimen and the conditions of exact irradiation of electron beam to small metallic precipitate were suggested.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of the Korea institute for structural maintenance and inspection
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• v.26 no.3
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• pp.72-83
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• 2022

This paper studied the effect on the microstructure, electrical properties, and compressive strength of cement mortar containing carbon fiber (CF) and steel fiber (SF), which are conductive materials. The resistivity of conductive fiber-reinforced cement mortar (FRCM) was measured using the 4-probe method, and the compressive strength was measured based on the compression test. Their performance was compared and reviewed with plain mortar (PM). Furthermore, the surface shape and composition of the fracture surface of the conductive FRCM were analyzed using a scanning electron microscope (SEM) and an energy disperse X-ray spectrometer (EDS). The results showed that the resistivity gradually increased as the curing time increased in all specimens, whereas the resistivity decreased significantly as the fiber volume fraction increased. Adding steel fibers up to 1.25% did not affect the resistivity of cement mortar considerably. On the contrast, the resistivity of carbon fiber was somewhat decreased even at low contents (ie, 0.1 to 0.3%), and thereafter, it was significantly decreased. The percolation threshold of the conductive CFRCM containing CF used in this experiment was 0.4%, and it is judged to be the optimum carbon fiber dosage to maximize the conductive effect while maintaining the compressive strength performance as much as possible. For the surface shape and composition analysis of conductive FRCM, the fracture surface was observed through SEM-EDS. These results are considered to be very useful in establishing the microstructure mechanism of reinforcing fibers in cement mortars.